A5101643569- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- HVDC Systems and Fault Protection
- Electrostatic Discharge in Electronics
- Supercapacitor Materials and Fabrication
- Advancements in Battery Materials
- Electromagnetic Compatibility and Noise Suppression
- Advanced Battery Materials and Technologies
- Multilevel Inverters and Converters
- Prenatal Screening and Diagnostics
- Thin-Film Transistor Technologies
- Hematopoietic Stem Cell Transplantation
- Assisted Reproductive Technology and Twin Pregnancy
- Semiconductor materials and interfaces
- Health, Environment, Cognitive Aging
- Advanced Battery Technologies Research
- Ovarian function and disorders
- Telomeres, Telomerase, and Senescence
- Silicon and Solar Cell Technologies
- Advanced DC-DC Converters
- Mesenchymal stem cell research
- Liver physiology and pathology
- Surface Chemistry and Catalysis
- Pulsed Power Technology Applications
China Academy of Engineering Physics
2017-2024
Shanghai First People's Hospital
2018-2024
Shanghai Jiao Tong University
2018-2024
Institute of Electronics
2024
Nanjing Medical University
2021-2023
Nanjing Maternity and Child Health Care Hospital
2023
Chengdu University of Technology
2019-2021
Soochow University
2020
Xiamen University
2018
National Engineering Research Center of Electromagnetic Radiation Control Materials
2011-2017
Although challenging, fabrication of porous conducting polymeric materials with excellent electronic properties is crucial for many applications. We developed a fast in situ polymerization approach to pure polyaniline (PANI) hydrogels, vanadium pentoxide hydrate nanowires as both the oxidant and sacrifice template. A network comprised ultrathin PANI nanofibers was generated during polymerization, large aspect ratio these allowed formation hydrogels at low solid content 1.03 wt %. Owing...
Metal organic frameworks (MOFs) show excellent electrochemical performances due to their ultrahigh porosity, large specific surface area, and easy functionalization. These characteristics make it fascinating electrode materials with performance for the currently dominated lithium-based batteries (e.g., Li-ion batteries, Li-S Li-O2 batteries). Hence, this review summarizes recent advances of MOFs-based as an high-performance lithium-ion storage. Firstly, we briefly describe development...
Twelve new and 10 known protostane triterpenoids were isolated from the rhizome of Alisma orientale. Their structures elucidated based on physical data analyses, including UV, HRESIMS, NMR experiments (1H, 13C NMR, 1H–1H COSY, HSQC, HMBC, NOESY), induced electronic circular dichroism. New compounds 1–12 classified as protostanes (1–10), 29-norprotostane (11), 24-norprotostane (12) by structure analyses. Furthermore, inhibitory effects human carboxylesterases (hCE-1, hCE-2) 1–22 evaluated....
A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the TLP-SBD that remarkably improves body characteristics while guarantees excellent fundamental performance of TMOS. In blocking state, P-base region, gate, P+ shield at bottom serve as TLP contact. Each assists in depleting drift region beneath Benefiting from self-assembled TLP, leakage...
In this article, commercially 1200-V asymmetric and double trench silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors (mosfets) from two manufacturers are investigated by experiment finite-element simulation under single-pulse unclamped inductive switching (UIS) stress. The variation in avalanche time with mosfet energy temperatures dependence of critical maximum power dissipation evaluated. It is found that failure mechanisms identified, i.e., thermal runaway gate oxide...
It has been consistently shown in several meta-analyses that infants born after ART have an excess of birth defects compared with those spontaneous conception, however, the prevalence among offspring China is incompletely studied. Moreover, it unclear to what extent risk associated parental infertility characteristics, specific procedures and twinning.In prospective cohort study, we included women who participated cohort, had pregnancies at least 20 gestational weeks between August 2016 May...
A low specific on-resistance <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX"> $(R_{{\rm on}, {\rm sp}})$</tex></formula> integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism investigated by simulation. The SOI features double trenches dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset trench, another (TG) extended to layer. First, form conduction...
A novel Silicon-on-Insulator laterally double-diffused metal-oxide-semiconductor transistor with ultralow specific ON-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,sp</sub> ) is proposed, and its analytical model for the breakdown voltage (BV) presented. The device features a variable-k dielectric trench p-pillar beside (VK-P). First, VK induces additional field peaks thus significantly increases average electric (E-field)...
The high ON-resistance and the limited breakdown voltage (BV) are two major issues for p-channel lateral double-diffused MOSFET (pLDMOS). To solve issues, an ultralow specific (RON,sp) pLDMOS with improved BV is proposed investigated by simulation. It features extended gate (EG) accumulation effect over drift region a P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> floating layer (PFL) in N-sub. In ON-state, EG induces hole along...
A novel ultralow specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON,sp</sub> ) SOI lateral double-diffused MOS (LDMOS) with three separated gates (TSGs) and high-k (HK) pillars is proposed investigated by simulation. The TSGs include the planar gate (G xmlns:xlink="http://www.w3.org/1999/xlink">X</sub> ), segmented trench xmlns:xlink="http://www.w3.org/1999/xlink">Y</sub> between p+ body contact regions, embedded...
A superjunction (SJ) VDMOS with a high- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> (HK) dielectric pillar below the trench gate is proposed and investigated by simulation. The HK causes self-adapted assistant depletion of n pillar. This not only increases n-pillar doping concentration thus reduces specific on-resistance ( xmlns:xlink="http://www.w3.org/1999/xlink">R</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">on, sp</sub> ) but...
In this paper, we investigate the performance of three-phase ac-ac matrix converter (MC) utilizing novel superjunction (SJ) reverse-blocking (RB)-insulated gate bipolar transistor (IGBT) as switch elements for first time. The SJ RB-IGBT offers bidirectional blocking capability >1200 V by introducing a shorted-collector trench and n2-layer. exhibits conducting mode in on-state unipolar during turn-off. Therefore, both low voltage (Von) turnoff energy loss ( Eoff) can be obtained. delivers...
A low specific on-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">\(R_{{{\rm \mathrm{{\scriptstyle ON}},sp}}}\) </tex-math></inline-formula> ) silicon-on-insulator (SOI) p-channel LDMOS (pLDMOS) with an enhanced reduced surface field (RESURF) effect and self-shielding of the back-gate (BG) bias is proposed investigated. It features oxide trench p-drift region surrounding trench, which built on...
An ultralow specific ON-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> , xmlns:xlink="http://www.w3.org/1999/xlink">sp</sub> ) thin-silicon-on-insulator (SOI) LDMOS is proposed. Its ON-state and OFF-state mechanisms thermal characteristic are investigated by simulation. It features an accumulation extended gate (AEG) structure on the surface AEG consists of a p-region two integrated diodes. In ON-state, high density...
A novel superjunction (SJ) reverse-blocking (RB) insulated gate bipolar transistor (IGBT) is proposed and investigated for the first time. The device features a shorted collector trench (SCT) at bottom, an SJ structure in drift region, N1-layer as well N2-layer bottom top side of N-pillar, respectively. First, SCT combined with N2 enables RB-IGBT to sustain high reverse breakdown voltage (BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
A novel Lateral Double-diffusion Metal Oxide Semiconductor (LDMOS) is proposed to enhance its breakdown voltage (BV) and reduce specific ON-resistance (RON,sp), mechanism investigated by simulation. It features a junction field plate (JFP) at surface an N+ floating layer (NFL) in the P-substrate. The lateral variation doping JFP not only modulates electric (E-field) distribution improve BV, but also allows high N-drift concentration thus reduces RON,sp owing charge compensation effect...
A 1200V-class Reverse Conducting IGBT with Alternating N+/P Buffers (AB) is proposed and its mechanism investigated for the first time. The AB RC-IGBT features a buffer layer alternately doped N+ P regions. separated from collector by part of N-drift region. serves as electron barrier during unipolar mode forces electrons to flow through high-resistance region between collector. Consequently, snapback suppressed fairly small cell pitch 30μm. In blocking state, fully depleted while not yet....
A snapback-free fast-switching lateral insulated-gate bipolar transistor (LIGBT) with low power loss and high ruggedness is proposed investigated by simulation. The device features a polysilicon regulative resistance (PR) trench cathode (TC), named PRTC LIGBT. PR employed to not only suppress the snapback effect regulating voltage drop between P+ anode N-buffer, but also improve tradeoff on-state (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
A low specific on-resistance (Ron,sp) UMOS with high permittivity (HK) dielectric pillars underneath the p body region (HK UMOS) is proposed and investigated. Its drift uniquely consists of two narrow highly-doped n one lightly doped <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> pillar, which parallel to HK pillars. First, offer resistance current paths in ON-state while sustains voltage OFF-state. Second, causes an enhanced...