Karl Rohracher

ORCID: 0000-0001-7691-4173
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Research Areas
  • Gas Sensing Nanomaterials and Sensors
  • Analytical Chemistry and Sensors
  • Advanced Chemical Sensor Technologies
  • Transition Metal Oxide Nanomaterials
  • Photonic and Optical Devices
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Lasers and Optical Devices
  • Radio Frequency Integrated Circuit Design
  • Plasmonic and Surface Plasmon Research
  • Neuroscience and Neural Engineering
  • Water Quality Monitoring and Analysis
  • Acoustic Wave Resonator Technologies
  • CCD and CMOS Imaging Sensors
  • Optical Coherence Tomography Applications
  • Advanced Fiber Laser Technologies
  • ZnO doping and properties
  • Ferroelectric and Negative Capacitance Devices
  • Air Quality Monitoring and Forecasting
  • Nanowire Synthesis and Applications
  • 3D IC and TSV technologies
  • Advanced Optical Network Technologies
  • Integrated Circuits and Semiconductor Failure Analysis
  • Sensor Technology and Measurement Systems

AMS (Austria)
2014-2022

Dielectric loaded surface plasmon waveguides (DLSPPWs) comprised of polymer ridges deposited on top CMOS compatible metal thin films are investigated at telecom wavelengths. We perform a direct comparison the properties copper (Cu), aluminum (Al), titanium nitride (TiN) and gold (Au) based by implementing same plasmonic waveguiding configuration for each metal. The DLSPPWs characterized leakage radiation microscopy fiber-to-fiber mimicking cut-back method. introduce ohmic loss rate (OLR) to...

10.1364/oe.25.000394 article EN cc-by Optics Express 2017-01-05

We present gas sensor devices based on nanocrystalline SnO2 films, which are integrated CMOS fabricated micro-hotplate (μhp) chips. Bimetallic nanoparticles (NPs) such as PdAu, PtAu, and PdPt have been synthesized for optimizing the sensing performance of these sensors. demonstrate that proper functionalization with PdAu-NPs leads to a strongly improved sensitivity toxic carbon monoxide while cross humidity dioxide is almost completely suppressed, high importance real life environmental...

10.1016/j.proeng.2014.11.679 article EN Procedia Engineering 2014-01-01

Current 3D integrated devices based on copper hybrid bonding are only integrating dual-damascene CMOS processes for interconnection.. In this study, we have developed a Titanium/Oxide (Ti/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) technology suitable 200 mm non-copper platforms featuring aluminum back-ends. A combination of material stack, CMP parameters and design rules enabled us to obtain defect-free bond interface across...

10.1109/ectc32862.2020.00044 article EN 2020-06-01

In this work, we present gas sensors based on nanocrystalline SnO2 ultrathin films, which were integrated microhotplate chips fabricated by CMOS technology. The sensitive with a thickness of 50nm, deposited the spray pyrolysis process. sensor resistance was significantly decreased in presence carbon monoxide. A response up to 50% is achieved at an operating temperature 375̊C. presented here enable 3D integration different sensing systems through-silicon-via Such 3D-integrated nanosensors are...

10.1016/j.proeng.2016.11.200 article EN Procedia Engineering 2016-01-01

Metal oxide gas sensors generally need to be operated at elevated temperatures, up and above 400 °C. Following the for miniaturization of implementation into smart devices such as smartphones or wireless sensor nodes, recently complementary metal-oxide-semiconductor (CMOS) process-based micro electromechanical system (MEMS) platforms (micro-hotplates, µhps) have been developed provide Joule heating metal sensing structures on microscale. Heating precision possible spatial temperature...

10.3390/s19030672 article EN cc-by Sensors 2019-02-07

Tungsten oxide is an intensively studied semiconductor with the relevant application as H2S gas sensor. In this work we report on sensor devices based tungsten nanowire networks, which are integrated a CMOS fabricated microhotplate chip. sensors were prepared by deposition of networks onto interdigitated electrodes CMOS. The material properties nanowires investigated TEM and Raman spectroscopy, confirming their non-stoichiometric state. Utilising WO3-x sensing obtained extraordinary...

10.1016/j.proeng.2016.11.189 article EN Procedia Engineering 2016-01-01

Towards Single Mode Fiber (SMF) based optical connections in Data Centers (DCs) we are presenting the SM platform of EU FP7 project PhoxTror. The major building blocks envisioned this area a 3D transceiver with capacity up to 480 Gb/s and router throughput on Si photonics switching matrix. goal it is presented basic 2×2 elements, 4×4 matrix Optical Through Silicon Vias (OTSVs) that enable functionality interposer.

10.1109/icton.2016.7550291 article EN 2016-07-01

In this work, we present the integration of functionalized tin dioxide gas sensors on CMOS fabricated microhotplate chips. Spray pyrolysis was used to deposit sensitive films, with a thickness 50 nm, microhotplates. The SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thin films were noble bimetallic nanoparticles - PdAu by inkjet printing and influence sensor performance evaluated. functionalization integrated lead an almost three...

10.1109/icsens.2016.7808667 article EN IEEE Sensors 2016-10-01

We present gas sensor devices based on ultrathin SnO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films, which are integrated CMOS fabricated micro-hotplate (μhp) chips. Bimetallic nanoparticles (NPs) such as PdAu, PtAu, and PdPt have been synthesized for optimizing the sensing performance of these sensors. demonstrate that functionalization nanocrystalline films with PdAu-NPs leads to a strongly improved sensitivity toxic carbon...

10.1109/essderc.2014.6948762 article EN 2014-09-01

This paper summarizes the outcome of EC FP7 project MSP - Multi Sensor Platform for Smart Building Management (Grant Agreement No. 611887). The consortium comprising 17 partners from 6 European countries developed a full manufacturing chain 3D system integration, which has never been realized before. It enables 3D-integration highly sophisticated components and sensor devices on CMOS electronic platform chip. final multi-sensor comprises variety gas sensors as well optical ultraviolet,...

10.1109/transducers.2019.8808418 article EN 2019-06-01

We present H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> S gas sensor devices based on tungsten oxide nanowire networks, which are integrated CMOS fabricated microhotplate chips. Such systems promising candidates for realizing smart consumer market applications. The sensors were prepared by the deposition of networks onto interdigitated electrodes microhotplates via drop-coating. Drop-coating a suspension represents simple and...

10.1109/icsens.2016.7808634 article EN IEEE Sensors 2016-10-01

first_page settings Order Article Reprints Font Type: Arial Georgia Verdana Size: Aa Line Spacing:  Column Width:  Background: Open AccessAbstract Heterogeneous Integration of Metal Oxides—Towards a CMOS Based Multi Gas Sensor Device † by Anton Köck 1,*, Marco Deluca 1, Florentyna Sosada-Ludwikowska Günther Maier Robert Wimmer Teubenbacher Martin Sagmeister 2, Karl Rohracher Ewald Wachmann Jan Steffen Niehaus 3, Sören Becker Öznur Tokmak Hendrik Schlicke Alexander Blümel 4, Popovic 4 and...

10.3390/proceedings2019014005 article EN cc-by 2019-06-19

Multifunctional nanoparticles are key for optimizing the performance of chemical sensor devices. We have fabricated a variety nanosensor devices based on ultrathin metal oxide films and nanowires, which been integrated CMOS-based micro-hotplate chips. These sensors functionalized with metallic as well bimetallic nanoparticles. demonstrated that Pt-NPs or NiPt-NPs, strongly increase sensitivity to carbon monoxide supress cross selectivity humidity in case SnO2 thin film employed both...

10.1109/asdam.2018.8544608 article EN 2018-10-01

New results are presented for the low frequency noise (LFN) characterization of N-MOS and P-MOS from a standard CMOS technology node. The impact n[Formula: see text] p[Formula: polysilicon gate doping on LFN devices has been investigated. demonstrate that higher poly improves performance up to factor six. device with shows no significant change in level. It is interesting note effective Coulomb scattering prefactor [Formula: increased both devices.

10.1142/s0219477522500286 article EN Fluctuation and Noise Letters 2022-02-10

Silicon nitride waveguide based photonic integrated circuits (PICs) are intensively investigated for a wide range of sensing applications in the visible to sub 1-µm near-infrared spectral region. The monolithic co-integration silicon photodiodes and read-out electronics offers additional benefits terms performance miniaturization. We discuss challenging aspects related efficient coupling routing light to, from, within PICs present interfacing building blocks offering potential solutions....

10.1117/12.2606125 article EN 2022-03-04
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