A5088027757- Perovskite Materials and Applications
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Nanowire Synthesis and Applications
- Advanced Memory and Neural Computing
- Photonic and Optical Devices
- ZnO doping and properties
- MXene and MAX Phase Materials
- Ferroelectric and Negative Capacitance Devices
- Ga2O3 and related materials
- Molecular Junctions and Nanostructures
- Semiconductor materials and interfaces
- Membrane Separation Technologies
- Advanced Semiconductor Detectors and Materials
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Cold Atom Physics and Bose-Einstein Condensates
- Neural dynamics and brain function
- Solid-state spectroscopy and crystallography
- Graphene research and applications
- Surface Modification and Superhydrophobicity
- Photonic Crystals and Applications
Henan Normal University
2016-2025
Beijing Institute of Technology
2007-2025
Zhuhai People's Hospital
2025
Jinan University
2025
Kunming Medical University
2024
Tianjin University
2022-2024
Tianjin Medical University General Hospital
2024
Xinxiang University
2015-2019
Shanghai Advanced Research Institute
2019
Chinese Academy of Sciences
2019
Photovoltaic performance of planar perovskite solar cells has been improved by mixing CH<sub>3</sub>NH<sub>3</sub>PbI<sub>x</sub>Cl<sub>3−x</sub> and a donor polymer [<italic>N</italic>-9′′-hepta-decanyl-2,7-carbazole-<italic>alt</italic>-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiaz-ole)].
Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in same physical processes. Here, inspired by ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric gate, exhibiting high logic ability program/erase ratio over 106 self-rectifying 103. Interestingly,...
Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs logic remains challenging. Here, by using density functional theory combined with nonequilibrium Green's function method, we a 5 nm split-gate FET based on monolayer WSe
High performance photodetectors based on van der Waals heterostructures (vdWHs) are crucial to developing micro-nano-optoelectronic devices. However, reports show that it is difficult balance fast response and high sensitivity. In this work, we design a photovoltaic field-effect photodiode (PVFED) the WSe2/MoS2/WSe2 double vdWHs, where photovoltage originated from one vdWH modulates optoelectronic characteristics of another vdWH. The proposed exhibits an excellent self-powered ability with...
We propose nonreciprocal phonon lasing in a coupled cavity system composed of an optomechanical and spinning resonator. show that the optical Sagnac effect leads to significant modifications both mechanical gain power threshold for lasing. More importantly, this is unidirectional, takes place when driven one direction but not other. Our work establishes potential devices low-power isolation unidirectional amplification. This provides new route, well within reach current experimental...
PEDOT:PSS–molybdenum oxide (MoO<sub>x</sub>) composite films are used as hole transport layers in planar perovskite solar cells (PSCs) by simply incorporating solution-processed MoO<sub>x</sub> powders into a PEDOT:PSS solution.
Few-layered GeS nanoflakes synthesized by a new post-thinning method show in-plane ferroelectric behaviour. The robust interfacial ferroelectricity in the GeS/InSe heterostructure yields tunable photovoltaic performance.
Schizophrenia is a mental health disorder characterized by functional dysconnectivity. Eigenvector centrality mapping (ECM) has been employed to investigate alterations in connectivity schizophrenia, yet the results lack consistency, and genetic mechanisms underlying these changes remain unclear. In this study, whole-brain voxel-wise ECM analyses were conducted on resting-state magnetic resonance imaging data. A cohort of 91 patients with schizophrenia matched healthy controls included...
Abstract Image processing has become a quintessential data‐intensive computational task, and leveraging sensors with real‐time image been focused for the development of photodetectors. However, managing responsivity normally needs an additional gate voltage, which seriously limits application in resource‐constrained edge computing. Here, bias‐dependent photodiode (BD‐PD) semi‐gate interconnecting drain based on 2D MoS 2 /CIPS heterojunction is proposed, exhibiting ability to autonomously...
The efficiency enhancement mechanism of the alkali-treated Si nanowire (SiNW) solar cells is discussed and analyzed in detail, which important to control useful photovoltaic process. All results demonstrate that performance SiNW device steps from formation good core-shell heterojunction, consequently enhances junction area, promotes fast separating transporting electron hole pairs, reduces carrier surface combination. It also indicates alkali treatment for SiNWs a promising processing as an...
High-quality β-CsPbI 3 film was grown using an efficient electron transport layer of low temperature Mo-doped SnO 2 nanocrystals. This work provides a simple strategy to simultaneously modulate CsPbI perovskite growth and the interfaces in devices.
The adaptive response of intelligent devices lays the foundation to integrating multiple functions at one device level. Here, with combination experimental observation and theoretical calculation, we report a structure ferroelectric field-effect diode (Fe-FED) based on gated WSe2/MoS2 van der Waals heterojunction (vdWH) channel. polarization-tuned photovoltaic is exhibited nonvolatility, which completely distinctive from gate-tunable conductance state conventional devices. Moreover,...
The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function Ag layer thickness. ZAZ are significantly improved up insertion optimal thickness between ZnS layers. results show that due to bombardment Ar beam, distinct islands evolve into continuous at thin about 4 nm. thinner film 2 nm leads high sheet resistance low transmittance for the interface...
The feather-like hierarchical zinc oxide (ZnO) was synthesized via successive ionic layer adsorption and reaction without any seed or metal catalyst. A possible growth mechanism is proposed to explain the forming process of ZnO structures. Meanwhile, photo-electronic performances have been investigated with UV-vis-NIR spectroscopy, I-V I-tmeasurements. results indicate that structures good anti-reflection excellent photo-sensitivity. All suggest direct processing novel envisaged promising...
An efficient and stable inverted planar PSC with V<sub>2</sub>O<sub>x</sub> additives is prepared in ambient air.
Few-layer In<sub>4/3</sub>P<sub>2</sub>Se<sub>6</sub> nanoflakes were exfoliated and exhibit an excellent optoelectronic detection-performance.