A5029560274- Laser Material Processing Techniques
- Diamond and Carbon-based Materials Research
- Surface Roughness and Optical Measurements
- Electronic and Structural Properties of Oxides
- Laser-Ablation Synthesis of Nanoparticles
- Thermography and Photoacoustic Techniques
- Superconducting Materials and Applications
- Advanced Materials Characterization Techniques
- Semiconductor Lasers and Optical Devices
- High-pressure geophysics and materials
- Magnetic confinement fusion research
- Corporate Governance and Management
- Optical Systems and Laser Technology
- Quantum, superfluid, helium dynamics
- Graphene research and applications
- Fusion materials and technologies
- Advanced optical system design
- Photonic and Optical Devices
- Semiconductor materials and devices
- BIM and Construction Integration
- Catalytic Processes in Materials Science
- ZnO doping and properties
Forschungszentrum Jülich
2024
University of California, Berkeley
2023
Planetary Science Institute
2023
Max Planck Institute for Solid State Research
2021-2023
Culham Science Centre
2022
United Kingdom Atomic Energy Authority
2022
The modeling of deposition rates in Thermal Laser Epitaxy (TLE) is essential for the accurate prediction evaporation process and improved dynamic control. We demonstrate excellent agreement between experimental data a model based on finite element simulation that describes temperature distribution an elemental source when irradiated with continuous wave laser radiation. strongly depends thermophysical constants material, which lacking many elements. Effective values parameters may be...
Abstract A sequence of fuel recovery methods was tested in JET, equipped with the ITER-like beryllium main chamber wall and tungsten divertor, to reduce plasma deuterium concentration less than 1% preparation for operation tritium. This also a key activity regard refining clean-up strategy be implemented at end 2nd DT campaign JET (DTE2) assess tools that are envisaged mitigate tritium inventory build-up ITER. The began 4 days baking 320 °C, followed by further which Ion Cyclotron Wall...
Aluminum plays a central role in the world of electronic oxide materials. Yet, aluminum sources are very difficult to handle during molecular-beam epitaxy, main reason for which is high oxidization potential aluminum. In this work, we present thorough study behavior thermal laser epitaxy. We identify two distinct operating regimes. At laser-beam fluences, source emanates reproducible fluxes independent an applied oxygen pressure <10−1 hPa. lower beam flux increases with increasing...
We propose and demonstrate that thermal laser evaporation can be applied to all solid, non-radioactive elements in the periodic table. By depositing thin films, we achieve growth rates exceeding 1 angstrom/s with output powers less than 500 W, using identical beam parameters for many different elements. The source temperature is found vary linearly power within examined range. High are possible free-standing sources most of tested, eliminating need crucibles.
By directly altering microscopic interactions, pressure provides a powerful tuning knob for the exploration of condensed phases and geophysical phenomena. The megabar regime represents an exciting frontier, where recent discoveries include novel high-temperature superconductors, as well structural valence phase transitions. However, at such high pressures, many conventional measurement techniques fail. Here, we demonstrate ability to perform local magnetometry inside diamond anvil cell with...
Thermal laser epitaxy (TLE) is a novel film growth technique capable of fabricating ultrapure films many material systems. For growing oxide with TLE, the impact source oxidation on evaporation rate central issue, which, however, has not yet been explored systematically. Here, we report systematic, experimental study role at various oxygen pressures and temperatures in TLE. The volatility oxidized metal sources affects rate. When more volatile than metal, increases supply. In strongly...
Synthesizing carbon films by thermal evaporation is challenging due to carbon's refractory nature, which entails extremely high temperatures (>2000 °C). This study investigates laser epitaxy (TLE) as a technique for film growth. We use TLE grow on c-plane sapphire substrates in wide range of substrate (20–1800 These studies show that the crystallinity can be controlled temperature during growth, where amorphous and nanocrystalline forms at lower higher temperatures, respectively. Carbon...
The heteroepitaxial growth of silicon (Si) is essential for modern electronics. Our study investigates the potential thermal laser epitaxy (TLE) Si epitaxy. A systematic on evaporation behavior during TLE identifies and addresses causes notable flux rate fluctuations, resulting in a with ±0.3% stability over time. We also demonstrate heteroepitaxy c-plane sapphire substrates via TLE. High-temperature substrate preparation combined deposition at temperature 1000 °C produced high-quality...