A5023199174- Advancements in Photolithography Techniques
- Nanofabrication and Lithography Techniques
- Semiconductor materials and devices
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Photocathodes and Microchannel Plates
- Advanced Surface Polishing Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- ZnO doping and properties
Indian Institute of Technology Mandi
2017-2024
Kaman (United States)
2017
The harmful UV radiation leaking out of the ozone hole can have a detrimental effect on mother nature. To monitor any rays requires an electronic device such as deep photodetectors. In this context, Sn-doped Ga<sub>2</sub>O<sub>3</sub> incorporated with SnO<sub>2</sub> nanostructures has been grown c-plane sapphire substrate using low-pressure chemical vapor deposition (LPCVD) followed by fabrication metal-semiconductor-metal (MSM) based ultraviolet (UV) photodetector (PD) Pt electrodes...
Given the need for advanced resist materials in view of fast shrinkage semiconductor node scaling, this work demonstrates lithography application an organotin-based cyclotrimeric species (Sn–CT) as a molecular sub-10 nm patterning using electron beam (EBL) and helium ion (HIBL) techniques. While has been successfully used ∼15 line/space features ∼9 discrete line at dose 2.5 mC/cm2 EBL, were printed on silicon 16 μC/cm2 HIBL. Moreover, Sn–CT also complex single nanometer regime such...
A new PAG integrated electron beam active terpolymer resist has been developed for high resolution pattern transfer applications.
Inorganic resists have emerged as promising candidates in semiconductor industries to realize sub-10 nm node technology. However, controlling vertical shrinkage of resist films during the pattern development process, particularly for ultralow thin film applications, is among highly pressing limitations inorganic along with roughness and poor shelf-life characteristics. Tin-based clusters small molecules been recently introduced materials. They possess a high absorption coefficient fast...
The development of new photoresist materials for multi-lithography applications is crucial but a challenging task semiconductor industries. During the last few decades, given need resists to meet requirements industries, several research groups have developed different resist specific lithography applications. In this context, we successfully synthesized molecular non-chemically amplified (n-CAR) (C3) based on functionalization aromatic hydroxyl core (4,4'-(9H-fluorene-9,9-diyl)diphenol)...
The development of new organic-inorganic hybrid photoresists with optimal lithographic performances is an extremely important but challenging task. In this regard, we have synthesized a family homo- and hybrid-polymer resists based on 4-(tosyloxy)phenyl methacrylate (TPMA) ferrocene (FEMA) monomers for micro-/nano-lithography applications. homo polymer resist, poly(TPMA), was by free radical polymerization TPMA monomer in ACN/THF (2:1, v/v) solvent system using azobisisobutyronitrile (AIBN)...
While inorganic resists are emerging as possible potential candidates for sub-10 nm node semiconductor fabrication, fundamental understanding on such promising chemical compositions is inevitably paramount to confront the concerning challenges associated with resists. Given that assisted nanopatterning of may significantly improve patterning capability along addressing vertical shrinkage issue resist film during processing and a greater extent, we present an interesting aspect matrix...
The present research demonstrates the fabrication and comparative performance of GaN-based metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector on sapphire substrate. MSM device has been fabricated with gold (Au) in an inter-digitized electrode (IDE) form different geometry molecular beam epitaxially (MBE) grown GaN. current-voltage characteristics shows minimum dark current 68 nA 40 photocurrent 24.5 μA 9.02 for rectangular asymmetric (RA) circular (CA) respectively. room...