Manvendra Singh Chauhan

ORCID: 0000-0003-4093-293X
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About
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Research Areas
  • Advancements in Photolithography Techniques
  • Semiconductor materials and devices
  • Hydrology and Watershed Management Studies
  • Advanced Image and Video Retrieval Techniques
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced Memory and Neural Computing
  • Advancements in Semiconductor Devices and Circuit Design
  • Innovative concrete reinforcement materials
  • Flood Risk Assessment and Management
  • Hydrology and Sediment Transport Processes
  • Groundwater and Watershed Analysis
  • Infrared Target Detection Methodologies
  • Video Surveillance and Tracking Methods
  • Water Quality and Pollution Assessment
  • Recycled Aggregate Concrete Performance
  • Innovations in Concrete and Construction Materials
  • Wastewater Treatment and Reuse
  • Ion-surface interactions and analysis
  • Copper Interconnects and Reliability
  • Advanced Vision and Imaging
  • Hydrology and Drought Analysis
  • Electron and X-Ray Spectroscopy Techniques
  • Hydrological Forecasting Using AI
  • Soil erosion and sediment transport
  • Nanofabrication and Lithography Techniques

Babasaheb Bhimrao Ambedkar University
2023-2025

Indian Institute of Technology Mandi
2020-2024

Sinhgad Dental College and Hospital
2023

Integrated Test Range
2017-2022

Defence Research and Development Organisation
2016-2022

Indian Institute of Technology Roorkee
2021

Madan Mohan Malaviya University of Technology
2018

Chitkara University
2017

Banaras Hindu University
2015

Indian Institute of Technology BHU
2015

Environmental pollution poses a pressing global challenge, demanding innovative solutions for effective pollutant removal. Photocatalysts, particularly titanium dioxide (TiO2), are renowned their catalytic prowess; however, they often require ultraviolet light activation. Researchers had turned to doping with metals and non-metals extend utility into the visible spectrum. While this approach shows promise, it also presents challenges such as material stability dopant leaching. Co-doping,...

10.3390/technologies11050144 article EN cc-by Technologies 2023-10-17

Abstract Resistive random‐access memories (ReRAM) are promising candidates for next‐generation non‐volatile memory, logic components, and bioinspired neuromorphic computing applications. The analog resistive switching (RS) tuning with a sizable memory window is crucial realizing multi‐level storage devices. This work demonstrates the capability of fabricated Ag/NiO/W ReRAM architecture, controlled through voltage modulations. structures exhibit stable bipolar RS, non‐overlapping resistance,...

10.1002/aelm.202300724 article EN cc-by Advanced Electronic Materials 2024-01-17

ABSTRACT This research paper focuses on the development and validation of a rating curve for River Ganga at Varanasi. Traditional methods measuring gauges calculating discharge face challenges during floods, necessitating innovative approaches. study employs acoustic Doppler current profilers (ADCP) remote measurement techniques, addressing limitations conventional methods. The methodology involves two-step procedure: establishing stage–discharge relationship stage determination. results...

10.2166/hydro.2025.146 article EN cc-by Journal of Hydroinformatics 2025-03-19

Hybrid metal-organic cluster resist materials, also termed as organo-inorganics, demonstrate their potential for use in next-generation lithography owing to ability patterning down ∼10 nm or below. High-resolution is integrally associated with the compatibility of and irradiation exposure source. Helium ion beam (HIBL) an emerging approach realization sub-10 patterns at considerably lower line edge/width roughness (LER/LWR) higher sensitivity compared electron (EBL). Here, first time, a...

10.1021/acsami.9b21414 article EN ACS Applied Materials & Interfaces 2020-04-08

Given the current need for resist materials patterning transistors with ultralow nodes, there has been a quest developing resists improved performance nanoscale good contrast. The present work demonstrates polymeric (MAPDST-TIPMA) developed through integration of radiation-sensitive monomer (MAPDST) an organoiodine functionality (TIPMA) sub-16 nm using electron-beam and helium ion beam lithography. structural integrity was established by several spectroscopic techniques particularly NMR,...

10.1021/acsaelm.0c01120 article EN ACS Applied Electronic Materials 2021-04-22

3-D Hybrid halide perovskites (HHPs) have garnered significant interest as a promising contender for next-generation resistive random access memory (ReRAM) technology. However, challenges such variations in cycle-to-cycle switching iterations, operating voltages, and restrained reproducibility arise due to the disproportionate presence of grain size (GS) boundaries (GBs), which are impediments widespread adoption perovskite-based devices commercial applications. Since GBs present thin film...

10.1021/acsaelm.4c00257 article EN ACS Applied Electronic Materials 2024-03-18

Since the fabrication of micro-/nanoelectronic devices are marching toward ultralow node technology with dense patterns to meet current industry demands, continuous advancement is needed in terms material design and lithographic techniques. In this perspective, helium ion beam lithography (HIBL) has gained tremendous attention scientific society realize high-performance device advanced technology. Salient features including sub-nanometer spot size, high-intensity lighter (with respect...

10.1021/acsaelm.0c00627 article EN ACS Applied Electronic Materials 2020-11-24

Given the need for advanced resist materials in view of fast shrinkage semiconductor node scaling, this work demonstrates lithography application an organotin-based cyclotrimeric species (Sn–CT) as a molecular sub-10 nm patterning using electron beam (EBL) and helium ion (HIBL) techniques. While has been successfully used ∼15 line/space features ∼9 discrete line at dose 2.5 mC/cm2 EBL, were printed on silicon 16 μC/cm2 HIBL. Moreover, Sn–CT also complex single nanometer regime such...

10.1021/acsanm.2c04831 article EN ACS Applied Nano Materials 2023-03-02

Inorganic resists have emerged as promising candidates in semiconductor industries to realize sub-10 nm node technology. However, controlling vertical shrinkage of resist films during the pattern development process, particularly for ultralow thin film applications, is among highly pressing limitations inorganic along with roughness and poor shelf-life characteristics. Tin-based clusters small molecules been recently introduced materials. They possess a high absorption coefficient fast...

10.1021/acsanm.2c01321 article EN ACS Applied Nano Materials 2022-07-27

Real Time object tracking based on template matching is one of the key technologies in image processing. This paper describes a fast algorithm Normalized Cross Correlation (NCC) for real time video sequence. It proposes an upper bound criteria, which states that calculated optimum correlation score at current position lower than maximum obtained previous position. condition accelerates process. At same time, sufficient termination adaptive threshold function also applied. has been proved...

10.1109/icrtit.2016.7569517 article EN 2016-04-01

The increase in the demand of sub-10 nm feature size semiconductor industries necessitates a new kind resist material development which can absorb large fraction irradiation and retains small cluster distribution (1-2 nm). In this context, we developed novel nickel-based organo-metallic comprising high optical density inorganic nickel as metal building units (MBU), 3,3-Dimethylacrylic acid an organic ligand to form Ni-DMA clusters. synthesised clusters have ~1 with narrow distribution....

10.1117/12.2552189 article EN 2020-03-24

Dynamics of river behavior plays a great role in meandering, sediment transporting, scouring, etc. at bend, which solely depends on hydraulics properties such as horizontal and vertical stress, spatial temporal variation discharge. Therefore understanding discharge distribution Ganga is essential to apprehend the cross section bend particularly. The measurement not very simple there no instrument that can measure directly, but velocity be made. Velocity different sections time also easy with...

10.4236/cweee.2015.43004 article EN cc-by Computational Water Energy and Environmental Engineering 2015-01-01

While inorganic resists are emerging as possible potential candidates for sub-10 nm node semiconductor fabrication, fundamental understanding on such promising chemical compositions is inevitably paramount to confront the concerning challenges associated with resists. Given that assisted nanopatterning of may significantly improve patterning capability along addressing vertical shrinkage issue resist film during processing and a greater extent, we present an interesting aspect matrix...

10.26434/chemrxiv-2024-rlb7j preprint EN cc-by-nc 2024-11-13

For Infrared Search and Track (IRST) systems used in military applications, presence of small target a large background is quite common. To detect track those objects clutter noise very difficult especially when full field view processing employed. Sophisticated computer vision techniques perform well but with an expense heavy computational cost. In this paper, we have tried to solve these problems two ways. First, hardware software co-design method employing FPGA accelerate the search...

10.1109/icort46471.2019.9069610 article EN 2019-02-01

Groundwater is an important source of water worldwide due to its wide availability and generally good quality.Earlier groundwater was easily accessible meet various domestic demands, but recently, it vulnerable depletion in many areas over exploitation mismanagement resources.This study used the Artificial Neural Network (ANN) model forecast (GW) level near Varanasi.ANN a way develop prediction based on human brain's functions.This research provides flawless using LM (Levenberg-Marquardt)...

10.13189/cea.2022.100618 article EN Civil Engineering and Architecture 2022-09-14

BackgroundAn incredible increase in the integration of electronic chips has pushed semicon industries to endorse high numerical aperture (h-NA ∼ 0.5), extreme-ultraviolet (EUV) lithography (EUVL) (λ 13.5 nm) at commercial scale. Induction h-NA postulates EUV resists that could outperform resolution, line pattern roughness, and sensitivity (RLS) trade-off for chip fabricators, which is currently extremely limited.AimThe development resist balance RLS as well overcome throughput limitations...

10.1117/1.jmm.21.4.044603 article EN Journal of Micro/Nanopatterning Materials and Metrology 2022-12-27
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