A5056768933- graph theory and CDMA systems
- Coding theory and cryptography
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Ferroelectric and Piezoelectric Materials
- Photovoltaic System Optimization Techniques
- Antenna Design and Analysis
- Silicon Carbide Semiconductor Technologies
- Intermetallics and Advanced Alloy Properties
- High-pressure geophysics and materials
- Wireless Body Area Networks
- Heusler alloys: electronic and magnetic properties
- Parallel Computing and Optimization Techniques
- Silicon Nanostructures and Photoluminescence
- Antenna Design and Optimization
- Inorganic Chemistry and Materials
- Crystal Structures and Properties
- Solid-state spectroscopy and crystallography
- Distributed and Parallel Computing Systems
- Advanced Data Storage Technologies
University Ferhat Abbas of Setif
2012-2024
Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis forward current–voltage (I–V) characteristics measured at elevated temperatures within range 303–448 K. The subsequently derived barrier heights (SBHs) and ideality factors found to be temperature dependent with distributions that adequately explained framework model proposed by Tung in which he considers a metal–semiconductor interface as consisting locally non-uniform but...
We investigated the athermal high-pressure behavior of elastic properties SrTiO 3 (STO) up to 26 GPa in cubic, tetragonal and orthorhombic phases using ab initio pseudo-potential method. Our results for cubic phase are good agreement with experiment previous calculations. There no studies under high pressure available comparison. To date, there global data on parameters STO. establish when we report our structural study three phases. calculations show that cubic–tetragonal transition occurs...
This study analyzed the accuracy of solar cell modeling parameters extracted from noisy data using Genetic Algorithms (GAs). Three crossover operators (XOs) were examined, namely Uniform (UXO), Arithmetic (AXO), and Blend (BXO) operators. The used an experimental benchmark a simulated curve where noise levels (p) 0 to 10% added. For each XO, analysis was carried out by running GAs 100 times varying p population size (Npop). Simulation results showed that UXO AXO suffered premature...
Abstract In this paper, a novel zero cross correlation (ZCC) code is proposed for spectral amplitude coding-optical division multiple access (SAC-OCDMA) systems. The construction method starts from the identity matrix and has several benefits summarized in both simplicity flexibility. presents also an adapted (or accepted) length SAC-OCDMA systems high SNR value that reaches respectively 3.18 1.84 times of system capacity comparing to other existed codes such as modified quadratic congruence...
This paper introduces a new method to construct zero cross correlation (ZCC) code for spectral amplitude coding-optical division multiple access (SAC-OCDMA) systems. Its construction is based on an identity matrix which characterized by: flexibility in weight and simple steps. According numerical results, SAC- OCDMA system has better performance using our proposed ZCC comparing with dynamic cyclic shift (DCS) random diagonal (RD) codes term of BER thanks property. Where, it can enhance the...
Abstract This paper presents for non-coherent Optical Code Division Multiple Access (OCDMA) systems a new optical code namely Two-Dimensional Half Spectral/Spatial Zero Cross Correlation (2D-HSSZCC) based on One-Dimensional (1D-ZCC) already developed using block matrices characterized by high capacity. The results of simulation show that the use eliminates totally Interferences (MAI) due to zero cross correlation flexibility, and less complexity construction which produces very low bit error...
Fin height and width dependence of negative positive Bias Temperature Instability (N/PBTI) on logic for memory high-κ metal gate (HKMG) FinFET transistors is reported the first time. It was observed that NBTI degradation less severe when increasing physical silicon fin. The increased fin results in a lower effective defect density, believed to be related reduced role defective corners and/or top surface. In addition, activation energies capture process tall fins during stress show values...
Fin height dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high-κ metal gate (HKMG) FinFETs transistors is reported the first time. It was observed that NBTI degradation less severe when increasing physical silicon fin. The increased fin results in a lower effective defect density, believed to be related reduced role defective corners and/or top surface. PBTI reveal similar, albeit severe, impact height, suggesting an layer, with again...
Abstract This study presents the characterization of nickel–vanadium (NiV) Schottky diode on n-type silicon (Si) in temperature range 75 K–300 K. The experimental current–voltage ( I–V ) measurements are first analyzed by using thermionic emission (TE) theory. For this purpose, vertical optimization method is used to find values TE parameters, i.e. ideality factor, barrier height, and series resistance. It found that these parameters exhibit strong dependence, an increase factor a decrease...
The chemical etching of the surface silicon wafers is a critical step in manufacturing process all semiconductor devices. In this contribution, we investigate effect alkaline on minority carrier lifetime and interface-states density ([Formula: see text] intended to be used as solar cell substrates. After alkali treatment, morphology was analyzed using scanning electron microscopy (SEM) UV-visible-NIR optical spectroscopy. Besides electrical characterizations, charge measured by Quasi-Steady...