A5003703158- Magnetic properties of thin films
- Topological Materials and Phenomena
- Heusler alloys: electronic and magnetic properties
- Magnetic Properties and Applications
- Magnetic and transport properties of perovskites and related materials
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Metallic Glasses and Amorphous Alloys
- Advanced Condensed Matter Physics
- Graphene research and applications
- Quantum and electron transport phenomena
- ZnO doping and properties
- MXene and MAX Phase Materials
- Phase-change materials and chalcogenides
- Transition Metal Oxide Nanomaterials
- Magnetic Properties of Alloys
- 2D Materials and Applications
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
- Microstructure and Mechanical Properties of Steels
- Multiferroics and related materials
- Electron and X-Ray Spectroscopy Techniques
- High Entropy Alloys Studies
- Shape Memory Alloy Transformations
- Magnetic Properties and Synthesis of Ferrites
ARC Centre of Excellence in Future Low-Energy Electronics Technologies
2020-2025
Monash University
2017-2025
Materials Science & Engineering
2018-2025
Australian Research Council
2022-2023
Australian Regenerative Medicine Institute
2022-2023
Hefei Institutes of Physical Science
2022
High Magnetic Field Laboratory
2022
Chinese Academy of Sciences
2022
Joint Laboratory for Extreme Conditions Matter Properties
2022
Suzuki (Japan)
2022
It is well established that the anomalous Hall effect a ferromagnet displays scales with its magnetization. Therefore, an antiferromagnet has no net magnetization should exhibit effect. Here we show non-collinear triangular Mn3Ge exhibits large comparable to of ferromagnetic metals; magnitude conductivity 500 per ohm cm at 2 K and 50 room temperature. The angular dependence measurements confirm small residual in-plane magnetic moment role in observed Our theoretical calculations demonstrate...
The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are one of the universal phenomena amorphous solids. Low temperature elastic measurements show that $e$-beam silicon ($a\text{\ensuremath{-}}\mathrm{Si}$) contains a variable density TLSs which diminishes growth reaches $400\text{ }\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$. Structural analyses these $a\text{\ensuremath{-}}\mathrm{Si}$ films become denser and more structurally ordered. We conclude...
The specific heat C of e-beam evaporated amorphous silicon (a-Si) thin films prepared at various growth temperatures T(S) and thicknesses t was measured from 2 to 300 K, along with sound velocity v, shear modulus G, density n(Si), Raman spectra. Increasing results in a more ordered network increases decrease bond angle disorder. Below 20 an excess is seen less than full where it typical solid, both linear term characteristic two-level systems (TLS) additional (non-Debye) T3 contribution....
Recently non-collinear magnetic structures have attracted renewed attention due to the novel Hall effects that they display. In earlier work evidence for a structure has been reported ferromagnetic Heusler compound Mn2RhSn. Using sputtering techniques we prepared high quality epitaxial thin films of Mn2RhSn by temperature growth on MgO (001) substrates. The are tetragonally distorted with an easy magnetization axis along c-axis. Moreover, find anomalous effect whose magnitude increases...
The tunnel magnetoresistance ratio (TMR) of fully epitaxial magnetic junctions with an off-stoichiometric Co${}_{2}$MnSi Heusler alloy has been shown to exhibit a systematic dependence on Mn content, reaching 1135% at 4.2 K for Co${}_{2}$Mn${}_{1.29}$Si. In this paper, we explain the behavior observed TMR using ab initio calculations and hard x-ray photoelectron spectroscopy (HAXPES). For Mn-deficient samples, show that drop is caused by Co antisite atoms, which impose extra states into...
The development of new phases matter at oxide interfaces and surfaces by extrinsic electric fields is considerable significance both scientifically technologically. Vanadium dioxide (VO2), a strongly correlated material, exhibits temperature-driven metal-to-insulator transition, which accompanied structural transformation from rutile (high-temperature metallic phase) to monoclinic (low-temperature insulator phase). Recently, it was discovered that low-temperature conducting state emerges in...
Off-stoichiometry, epitaxial $\mathrm{F}{\mathrm{e}}_{x}\mathrm{S}{\mathrm{i}}_{1\ensuremath{-}x}$ thin films $(0.5<x<1.0)$ exhibit $D{0}_{3}$ or $B2$ chemical order, even far from stoichiometry. Theoretical calculations show the magnetic moment is strongly enhanced in fully chemically disordered $A2$ phase, while both theoretical and experimental results that magnetization nearly same phases, meaning partial disorder does not influence magnetism. The dependencies of moments are directly...
The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ2 switches from 1 to 0. These offer prospects for quantum electronics; however, a method is needed spatially-control pattern channels. It shown that modifying Sb2Te3 single-crystal surfaces with ion beam insulator into amorphous state exhibiting negligible bulk and surface conductivity. This attributed transition = → 0 threshold disorder strength. observation supported by...
Transition metals such as Mn generally have large local moments in covalent semiconductors due to their partially filled $d$ shells. However, magnetization group-IV is more complicated than often recognized. Here we report a striking crossover from quenched moment $(<0.1{\ensuremath{\mu}}_{B})$ amorphous Si $(a\text{-Si})$ distinct $(\ensuremath{\ge}3{\ensuremath{\mu}}_{B})$ Ge $(a\text{-Ge})$ over wide range of concentrations (0.005--0.20). Corresponding differences are observed $d$-shell...
Significance Highly conducting transparent oxides are widely used as electrodes in various electronic devices where optical transparency through a low-resistance electrode is needed. Here, we show that highly oxide films can be formed by electrolyte gating of thin tungsten oxide, WO 3 , initially insulating. Optical and structure measurements the visible spectrum before gating, due to significant band gap ∼3.0 eV. No change found on metallic state so remain spectral region. Thus insulating...
We report the first study on chemical preparation, structural characterization, and magnetic properties of Co2NiGa nanoparticles (NPs) a single γ-phase (γ-Co2NiGa). The γ-Co2NiGa NPs were prepared by impregnation in colloidal silica followed high temperature annealing under hydrogen atmosphere. crystal structure tetragonal was confirmed selected area electron X-ray diffraction studies. Energy-dispersive spectroscopy mapping absorption near edge data provided evidence for successful...
The local atomic environments and magnetic properties were investigated for a series of Co(1+x)Fe(2-x)Si (0<x<1) Heusler compounds. While the total moment in these compounds increases with number valance electrons, highest Curie temperature (Tc) this was found Co1.5Fe1.5Si, Tc 1069 K (24 higher than well known Co2FeSi). 57Fe M\"ossbauer spectroscopy used to characterize order estimate Co Fe moments. Consideration moments exchange integrals is necessary understand trend Tc.
Understanding the air stability of MnBi2Te4 thin films is crucial for development and long-term operation electronic devices based on magnetic topological insulators. In present work, we study upon exposure to atmosphere using a combination synchrotron-based photoelectron spectroscopy, room-temperature electrical transport, atomic force microscopy determine oxidation process. After 2 days exposure, nm thick oxide passivates surface, corresponding only top two surface layers, with underlying...
The Mn magnetic moment in positions with octahedral symmetry is localized and comprised completely by itinerant electrons.
ZrGeSe is one of the most well-known topological nodal-line semimetals, which possesses linearly dispersive electronic bands near Fermi surface. However, lattice-dynamics study and its interaction with system have not been investigated. We employed inelastic neutron-scattering method to lattice dynamics single crystals. The measured acoustic phonon dispersions were compared calculations, an overall good agreement theory; however, both longitudinal transverse along ($q00$) directions...
The Bi2Se3-family of 3D topological insulators (3DTI) exhibit insulating bulk states and surface presenting a Dirac cone. At low temperatures, the conduction channels through material are fully gapped, making 3DTIs perfect systems to study 2D transport behavior fermions. Here, we report 3DTI Bi1.1Sb0.9STe2 with reduced level defects, thus, high-temperature in its states. insulator-to-metal transition occurs at ∼250 K, below which contributions negligible. Even room temperature, conductivity...
Abstract Emergent phenomena such as two-dimensional electron gas (2DEG) and interfacial superconductivity ferromagnetism are generally built on the interface between insulating oxide thin films substrates, e.g., LaAlO 3 /SrTiO , where 2D profiles of these electronic states precisely confined at two insulators. Herein we report a high-mobility state with unusual symmetry Sr 2 CrMoO 6 (110) heterostructures, fermiology which follows cubic crystallographic rather than itself, resulting in...
Modifications in nanoscale chemical order can tune the magnetic properties of Co<sub>2</sub>FeSi<sub>x</sub>Al<sub>1−x</sub>, indicating disorder as a potential engineering tool.