A5101766558- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Ion-surface interactions and analysis
- Ferroelectric and Negative Capacitance Devices
- Nuclear materials and radiation effects
- Electronic and Structural Properties of Oxides
- Physics of Superconductivity and Magnetism
- 2D Materials and Applications
- High-pressure geophysics and materials
- ZnO doping and properties
- Advanced Condensed Matter Physics
- Radiation Effects in Electronics
- Nuclear Materials and Properties
- Ga2O3 and related materials
- Graphene research and applications
- Advanced Data Storage Technologies
- Radioactive element chemistry and processing
- Olfactory and Sensory Function Studies
- Electrostatic Discharge in Electronics
- Semiconductor materials and interfaces
- Advanced biosensing and bioanalysis techniques
- MXene and MAX Phase Materials
- Interconnection Networks and Systems
- Nanopore and Nanochannel Transport Studies
Institute of Modern Physics
2017-2025
Chinese Academy of Sciences
2017-2025
University of Chinese Academy of Sciences
2017-2024
Institute of Physics
2023-2024
Songshan Lake Materials Laboratory
2023-2024
University of Wollongong
2010
The electrical characteristics and microstructures of $\beta$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that SBD showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n reverse leakage current density Jr. In addition, carrier concentration drift layer decreased significantly calculated removal rates were 5*106 - 1.3*107 cm-1. Latent...
Graphene is an ideal candidate for the development of solid state nanopores due to its thickness at atomic scale and high chemical mechanical stabilities. A facile method was adopted prepare single graphene nanopore supported by PET membrane (G/PET nanopore) within three steps assisted swift heavy ion irradiation asymmetric etching technology. The inversion rectification effect confirmed in G/PET while comparing with bare KCl electrolyte solution. By modifying wall charge conical...
The amorphous latent tracks in β-Ga2O3 single crystal irradiated with ∼5–10 MeV u−1 181Ta and 86Kr ions were investigated by transmission electron microscopy (TEM). TEM images showed that the mean diameter of increased from 2.2 to 8.8 nm electronic energy loss (Se) values increasing 18.3 41.5 keV nm−1. Moreover, inelastic thermal spike model was used predict track size. calculation results agreed well experimental predicted Se threshold formation about 17 nm−1 for 5–10 heavy ions.
Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, the underlying mechanism is still unclear. One fundamental problem lack of high-resolution characterization radiation damage irradiated SiC devices, which a crucial indicator related mechanism. In this Letter, transmission electron microscopy (TEM) was used to characterize 1437.6 MeV 181Ta-irradiated junction barrier Schottky diode...
The reliability degradation of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based devices under heavy ion irradiation is still an open question. In this letter, the ultrathin amorphous gate stacks were irradiated by different types swift ions (SHIs). fine structure latent track in crystalline phase along particle trajectory. effects on electrical properties characterized high frequency capacitance-voltage (C-V) and leakage...
The various morphologies of tracks in MoS 2 irradiated by swift heavy ions at normal and 30° incidence with 9.5–25.0 MeV/u 86 Kr, 129 Xe, 181 Ta, 209 Bi were investigated transmission electron microscopy. diameter ion increases from 1.9 nm to 4.5 increasing electronic energy loss. loss threshold the track formation is predicted as about 9.7 keV/nm based on thermal spike model it seems consistent experimental results. It shown that morphology related penetration length . process discussed...
The emergence of monolayer transition metal dichalcogenides (TMDCs) has provided a favorable platform for exploring broad range novel optoelectronic device applications and quantum phenomena due to their remarkable physical chemical characteristics. Understanding the motion excitons in TMDCs is fundamental interest devices. Here, we demonstrate exciton WS2 that can be fine-tuned by swift heavy ion (SHI) irradiation. dependence trion emissions on SHI irradiation as-transferred as-grown was...
Polycrystalline samples of La 2 Zr O 7 pyrochlore are irradiated by different energetic heavy ions to investigate the dependence vibrational mode variations on irradiation parameters. The applied electronic energy loss (d E /d x ) e increases from about 5.2 keV/nm 39.6 keV/nm. ion fluence ranges 1 × 10 11 ions/cm 6 15 . Vibrational modes analyzed using Raman spectrum. Infrared active F 1u at 192, 308, and 651 cm −1 appear in spectra, 2g band 265 rises up due 200-MeV Kr with 16.0 Differently,...
Abstract The effect of defects on the high‐pressure behavior materials is fundamental to understanding and designing for extreme environments. Previous work has demonstrated that radiation damage can enhance phase stability or alter transformation pathway. Here, we report CeO 2 irradiated by swift heavy ions. particular interest because it be used as a non‐radioactive surrogate UO PuO . High‐pressure Raman spectroscopy shows low‐fluence ion exhibits nearly same unirradiated ; whereas, after...
Abstract The effects of heavy ion irradiation on the electrical response HfO 2 -based ferroelectric capacitors have been studied. All hysteresis loops measured from irradiated samples shifted toward positive voltage. remanent polarization and relative permittivity decrease with increasing fluence. leakage current exhibit negligible change after irradiation. main reason causing phenomena is swift ions (SHIs) induced pinning domain walls, attributed to phase transition. This work provides...
Understanding and facilitating defects in two-dimensional transition metal dichalcogenides (TMDCs) are of fundamental importance for their application optoelectronic devices valleytronic devices. In this study, swift heavy ion (SHI) irradiation was applied to introduce monolayer WSe2 a controlled manner. Temperature-dependent photoluminescence transient absorption spectroscopy employed investigate the excitonic performances defective WSe2. It is observed that trion emission rises up...
Two-dimensional transition metal dichalcogenide-based memtransistors provide simulation, sensing, and storage capabilities for applications in a remotely operated aerospace environment. Swift heavy ion (SHI) irradiation technology is common method to simulate the influences of radiation ions on electronic devices space environments. Here, SHI under different conditions was utilized produce complex defects WSe2-based memtransistors. Low-resistance state low-resistance (LRS-LRS) switching...
Abstract This article reports a comprehensive study on the damage evolution in InP crystal irradiated by swift heavy ions (SHIs, 129 Xe and 209 Bi). The effects were investigated means of Raman spectroscopy. An analysis TO LO phonon intensities ratio ( I / ) for given geometry will yield insights into lattice quality. A direct comparison experimental theoretical results has been discussed detail. show that intensity increases with increased ion fluences electron energy loss dE/dx e . In...
Abstract Single‐crystal indium phosphide (InP) was irradiated by swift heavy ions ( 40 Ar, 56 Fe, 86 Kr, 181 Ta, and 209 Bi) with different energies. The damage evolutions have been investigated means of Raman spectroscopy electron microscopy. Analysis intensity ratio (LO′ peak to LO [ I LO′ / ]) provides a new insight into the lattice quality samples. defect‐activated longitudinal optical mode (LO′) appeared then disappeared increasing ion fluences, it seems that point is electronic energy...
Optical feedback Self-mixing Interferometry (OFSMI) can achieve a high-resolution displacement sensing and measurement by using advanced digital signal processing. However, most existing processing algorithms used for OFSMI signals are implemented on PC Matlab or other programming languages. In this case, the whole structure of system is incompact in low speed. The design trends systems towarding to small size, high integration fast real time These require us improve design. It good solution...