A5004629662- Radiation Effects in Electronics
- Semiconductor materials and devices
- VLSI and Analog Circuit Testing
- Metallic Glasses and Amorphous Alloys
- Magnetic Properties and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Magnetic properties of thin films
- Low-power high-performance VLSI design
- Thin-Film Transistor Technologies
- Electrical and Thermal Properties of Materials
- Ferroelectric and Negative Capacitance Devices
- Physical Unclonable Functions (PUFs) and Hardware Security
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic Field Sensors Techniques
- Smart Materials for Construction
- Advanced Neural Network Applications
- Icing and De-icing Technologies
- Magneto-Optical Properties and Applications
- Surface Roughness and Optical Measurements
- Embedded Systems Design Techniques
- Advanced MEMS and NEMS Technologies
- Digital Holography and Microscopy
- Advanced Graph Neural Networks
- Interconnection Networks and Systems
Fudan University
2021-2024
Chinese Academy of Sciences
2019-2024
Guangzhou University
2024
Institute of Engineering Thermophysics
2023-2024
National Kaohsiung University of Science and Technology
2024
University of Shanghai for Science and Technology
2024
Inner Mongolia University of Technology
2024
Shanghai Fudan Microelectronics (China)
2021-2023
University of Chinese Academy of Sciences
2019-2022
Institute of Modern Physics
2019-2022
New sensitive quick-response and low-power-consumption micromagnetic sensors, namely, the magnetoimpedance (MI) sensor utilizing MI effect in zero-magnetostrictive amorphous wires stress-impedance (SI) SI negative-magnetostrictive wires, are presented. The field detection resolution of CMOS IC-type is about I /spl mu/Oe for ac fields 100 a dc with full scale plusmn/3 Oe using 2- or 0.5-mm-long wire 30- 15-/spl mu/m diameter as head. possible response speed 1 MHz, power consumption 10 mW....
In winter, wind turbines are susceptible to blade icing, which results in a series of energy losses and safe operation problems.Therefore, icing detection has become top priority.Conventional methods primarily rely on sensor monitoring, is expensive limited applications.Data-driven have feasible with the development artificial intelligence.However, data-driven method plagued by training samples samples; therefore, this paper proposes an warning strategy based combination feature selection...
Onshore wind turbines are primarily installed in high-altitude areas with good energy resources. However, winter, the blades easy to ice, which will seriously impact their aerodynamic performance, as well power and service life of turbine. Therefore, it is great practical significance predict turbine blade icing advance take measures eliminate adverse effects icing. Along these lines, three approaches supervisory control data acquisition (SCADA) feature selection were summarized this work....
A new highly stable magneto-impedance (MI) micro magnetic sensor with a pair of zero-magnetostrictive amorphous wires is presented. The picks up first pulse in an induced oscillatory voltage at wire coil using analog switch. High temperature stability the MI established which zero drift for variation from 20/spl deg/C to 80/spl 0.6%/FS (0.01.%/FS/spl deg/C). will be useful application automobile controls.
The 65 nm Static Random Access Memory (SRAM) based Field Programmable Gate Array (FPGA) was designed and manufactured, which employed tradeoff radiation hardening techniques in Configuration RAMs (CRAMs), Embedded (EBRAMs) flip-flops. This hardened circuits include large-spacing interlock CRAM cells, area saving debugging logics, the redundant flip-flops error mitigated 6-T EBRAMs. Heavy ion irradiation test result indicates that CRAMs had a high linear energy transfer threshold of upset ∼18...
The standard and layout-hardened D filp-flops (DFFs) named DFF1-6 were designed manufactured based on an advanced 22-nm ultrathin body buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) technology. Heavy-ion irradiation results indicate that FD-SOI technology has contributions to radiation hardness the hardened DFFs have higher single-event upset (SEU) tolerance than DFF. upsets induced by embedded SET targets are strongly dependent testing frequency. layout separating dual...
Radiation effects can induce severe and diverse soft errors in digital circuits systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity promote space application of ultra large-scale integrated (ULSI). Picosecond pulsed laser high energy heavy ions were employed for irradiation. Before tests, SRAM-based configure RAMs (CRAMs) initialized configured. The 100% embedded block...
In the current network and big data environment, secure transmission of digital images is facing huge challenges. The use some methodologies in artificial intelligence to enhance its security extremely cutting-edge also a development trend. To this end, paper proposes security-enhanced image communication scheme based on cellular neural (CNN) under cryptanalysis. First, complex characteristics CNN are used create pseudorandom sequences for encryption. Then, plain sequentially confused,...
With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four channel areas and a stack chain are designed investigate SET advanced 22 nm CMOS technology. A NAND is also used comparison chains....
Three layout-hardened Dual Interlocked Storage Cell (DICE) D Flip-Flops (DFFs) were designed and manufactured based on an advanced 28 nm planar technology. The systematic vertical tilt heavy ion irradiations demonstrated that the DICE structure contributes to radiation tolerance. However, it is hard achieve immunity from a Single Event Upset (SEU), even when ~3-µm well isolation utilized. SEU mitigation of hardened DFFs was affected by data patterns clock signals due imbalance in number...
The advanced FDSOI technology has improved performance and inherent SEU resistance of integrated circuits, which is beneficial to the space applications. This paper provides comprehensive characterization sensitivities based on 3D-TCAD SPICE simulations, as well irradiation results. We concentrate transient pulse, charge sharing, collection effects circuits. impact strike location features evaluated in simulation, influence sharing thresholds SRAM also analyzed. sensitive regions are...
A new frequency-modulation-type magnetoimpedance (MI) sensor using amorphous wire and a complimentary metal-oxide-semiconductor (CMOS) multivibrator is presented. The normal switching mode (mode I) with the alternative saturation off states in p-MOSFET n-MOSFET maintains stable oscillation simultaneous CMOS unsaturation state II) generates sensitive MI effect. 50%/Oe change frequency versus external dc magnetic field was obtained. linear characteristic obtained negative feedback through...
A figure of merit (FOM) for the magneto-impedance (MI) effect is defined by product MI ratio and cut-off frequency ac field detection as (|/spl part/Z//spl part/Hex|/Z/sub 0/)/spl middot/f/sub cutoff/. The FOM almost zero-magnetostrictive amorphous wire 30 /spl mu/m diameter was about improved 2.5 times twisting flash annealing using a pulse current 80 mA, 1 second. sensitive, quick response, low power consumption wireless FM type sensor constituted high head combined with all CMOS IC...
The authors have presented a pulse frequency modulation (PFM) amorphous wire CMOS IC magneto-impedance (MI) sensor for the purpose of omitting A/D converter in electronic compass mobile phone application by counting output square wave voltage width with number timing pulses microprocessor. Elimination converters is useful downsizing, speed up and cost cutting compass. However, stability PFM-MI should be improved canceling fluctuation circuit parameter (R, C) temperature variation. They...
Four kinds of radiation hardened SRAM were fabricated based on a 22 nm UTBB FDSOI process and irradiated by high-energy heavy ions. The high SEU tolerance even immunity for the three DICE SRAMs investigated in vertical heavy-ion irradiation. However, large-tilt-incidence (75°-85°) significantly increased cross sections 8-T SRAMs, errors M-DICE C-DICE large tilt incidence observed as well, indicating that layout placement is essential. contributes substantially to realize tolerance. While...
Abstract The effects of heavy ion irradiation on the electrical response HfO 2 -based ferroelectric capacitors have been studied. All hysteresis loops measured from irradiated samples shifted toward positive voltage. remanent polarization and relative permittivity decrease with increasing fluence. leakage current exhibit negligible change after irradiation. main reason causing phenomena is swift ions (SHIs) induced pinning domain walls, attributed to phase transition. This work provides...
Aiming at the problem that it is difficult to accurately detect position and magnitude of pitch angle deviation (PAD) fault wind turbine (WT) in operation same time, this paper proposes a novel multi-parameter synergy mechanism based on double threshold judgment method combined with power spectral density analysis. First, influence different PADs single blade time domain information WT parameters under turbulent speeds discussed. Second, according changing rule three caused by PAD,...
A flexible and multipurpose Single Event Effects (SEEs) testing system was developed for evaluating the reliability of nanoscale Very Large Scale Integrated Circuit (VLSI). The accurate detection, comparation classification latch-up, upset, functional interrupt were achieved. In host PC part, two customized software systems developed, including Procise maximal resources occupation a C# based visual control interface real-time communication. For hardware, motherboard-daughterboard guaranteed...