Jian Yu

ORCID: 0000-0003-0955-1346
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About
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Research Areas
  • Radiation Effects in Electronics
  • Semiconductor materials and devices
  • VLSI and Analog Circuit Testing
  • Integrated Circuits and Semiconductor Failure Analysis
  • Transportation Planning and Optimization
  • Traffic Prediction and Management Techniques
  • Traffic control and management
  • Embedded Systems Design Techniques
  • Advanced Sensor and Control Systems
  • Advanced Algorithms and Applications
  • Low-power high-performance VLSI design
  • Advanced Computational Techniques and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Interconnection Networks and Systems

Fudan University
2019-2022

Ningbo University
2012-2014

A simple control method to suppress traffic congestion is proposed for the car-following model. The stability conditions are derived by using method, and feedback signals, which act on our system, extended signals will play an effect only if congested. corresponding numerical simulation results agree well with theoretical analysis, can successfully jams.

10.1088/0256-307x/29/5/050502 article EN Chinese Physics Letters 2012-05-01

Radiation effects can induce severe and diverse soft errors in digital circuits systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity promote space application of ultra large-scale integrated (ULSI). Picosecond pulsed laser high energy heavy ions were employed for irradiation. Before tests, SRAM-based configure RAMs (CRAMs) initialized configured. The 100% embedded block...

10.3390/electronics8121531 article EN Electronics 2019-12-12

With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four channel areas and a stack chain are designed investigate SET advanced 22 nm CMOS technology. A NAND is also used comparison chains....

10.1109/access.2020.2978201 article EN cc-by IEEE Access 2020-01-01

A modified car following model is put forward considering the headway distance of two successive vehicles in front. control method to suppress traffic congestion proposed for model. According theory, stability conditions are derived. The feedback signals, which act on our system, consider velocity difference effect. signals will play an effect only if state congestion. corresponding numerical simulation results agree well with theoretical analysis.

10.4028/www.scientific.net/amm.198-199.962 article EN Applied Mechanics and Materials 2012-09-01

This paper introduced a kind of frequency control QPSK modulator based on DDS technology,which is implemented FPGA.In this way, not only small size, low cost, system stability and high reliability ,but also can conveniently change the signal to adjust different environments.

10.4028/www.scientific.net/amm.599-601.948 article EN Applied Mechanics and Materials 2014-08-01

In this paper, the Ring Oscillators (ROs) with inverters, 8 (or 16) dividers, and 3-level buffers are fabricated in a 22 nm Ultra-Thin Body Buried oxide (UTBB) Fully Depleted Silicon on Insulator (FDSOI) technology. The ROs comprehensively characterized by reliability tests including impact of core voltages, temperatures, body bias, Total Ionizing Dose (TID) effect. RO frequency shows positive correlation increase voltage. With variation temperature conditions, exponential growth standby...

10.1109/icsict55466.2022.9963255 article EN 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) 2022-10-25

FDSOI technology has attracted considerable interests in radiation environments for its inherent high SEU tolerance, especially the advanced nanoscale devices. Hence, 20 nm basic 6-T SRAM and hardened 8-T based on platform of UTBB process are set up simulated by calibrated double exponential current pulses to fully characterize sensitivities. A low threshold an at least ~×20 improvement observed. And calculated resistance SRAMs is closely related injection nodes. The improved unit...

10.1109/asicon52560.2021.9620488 article EN 2021 IEEE 14th International Conference on ASIC (ASICON) 2021-10-26
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