A5100332517- Thin-Film Transistor Technologies
- Organic Light-Emitting Diodes Research
- Plasma Diagnostics and Applications
- Semiconductor materials and devices
- Organic Electronics and Photovoltaics
- Iterative Learning Control Systems
- Photonic and Optical Devices
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Copper-based nanomaterials and applications
- Quantum Dots Synthesis And Properties
- Semiconductor Lasers and Optical Devices
- Laser-induced spectroscopy and plasma
- Chalcogenide Semiconductor Thin Films
- Acoustic Wave Resonator Technologies
- Advanced Memory and Neural Computing
- Plasma Applications and Diagnostics
- GaN-based semiconductor devices and materials
- Advanced Fiber Optic Sensors
- 3D Modeling in Geospatial Applications
- Electrohydrodynamics and Fluid Dynamics
- Mechanics and Biomechanics Studies
- Ferroelectric and Negative Capacitance Devices
- Advanced Optical Sensing Technologies
Hyundai Motors (South Korea)
2025
Aoyama Gakuin University
2025
Pusan National University
2025
Hanyang University
2005-2024
Anyang University
2022-2024
Chungbuk National University
2023
Pohang Accelerator Laboratory
2023
University of California, Riverside
2022
University of Yamanashi
2020
LG (South Korea)
2018
Abstract Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide semiconductors has grown. They offer high mobility, low off-current, process temperature, and wide flexibility for compositions processes. Unfortunately, depositing using conventional processes like physical vapor deposition leads to problematic issues, especially high-resolution displays highly integrated memory devices. Conventional approaches have limited poor conformality on structured...
Abstract Large flexible organic light‐emitting diode (OLED) display provides various electronic applications such as curved, bendable, rollable, and commercial display, because of its thinness, light weight, design freedom. In this work, the process flow key technologies to fabricate world's first large size 77‐inch transparent OLED are introduced. “White on TFT + color filter” method is used aforementioned display. On both thin‐film transistor filter substrates, polyimide (PI) was plastic...
We have performed an extensive investigation of the parameters affecting degree nitrogen fixation and its energy cost in a low-pressure, radio frequency-driven plasma reactor. find that hydrogen-to-nitrogen ratio has strong effect on both yield cost. A significant (∼8%) can be achieved under hydrogen-rich mixtures, but unfortunately these conditions require higher input compared to one-to-one ratio. The high largely exceeds dissociation plasma, suggesting that, while likely contributes...
In this study, we synthesized composite metal oxide nanoporous structures using the Polymer-confined Direct Solution Pyrolysis (PDSP) method, which efficiently produces materials. By combining multiple nitrates with polymer templates, fabricated composed of CuO, Fe2O3, and ZnO. The formation these individual oxides spinel structured such as CuFe2O4 ZnFe2O4 was confirmed through XRD, TEM FactSage thermodynamic calculations. We investigated explosive characteristics when used oxidizers in...
The performance of a semiconductor device crucially depends on the carrier concentration semiconducting material. hole is governed by density states (DOS) and Fermi–Dirac distribution, indicating importance DOS in top region valence band. Herein, band nondoped nitrogen‐doped Cu 2 O films using UV photoelectron spectroscopy constant‐final‐state yield measured. obtained varies over six orders magnitude from to Fermi level. Judging observed Hall effect measurements, maximum (VBM) distribution...
This study investigates the effects of nitrogen doping on structural, optical, and electrical properties Cu 2 O N‐doped films deposited by RF magnetron sputtering using or targets under varying flow conditions. X‐ray diffraction transmission electron microscopy analyses reveal that alters polycrystalline orientation, particularly (111) planes. The stability phase across all is confirmed Raman spectroscopy. Optical bandgap estimates Tauc's plots shows ≈2.5 eV, implying does not significantly...
We investigated the optical reflectance, surface roughness, and sheet resistance of aluminum (Al)/titanium nitride (TiN), titanium (Ti), tungsten (W) layers on Si substrates, which are available in CMOS foundry, for organic light-emitting diode (OLED) microdisplays. The devices with different metal anode exhibited hole-injection properties OLED performances, owing to electrical layers. Based characteristics, Al/TiN layer was selected as an A green monochromatic microdisplay panel designed...
The In–Sn–Ga–O (ITGO) thin-film transistor (TFT) is promising in that it possesses enhanced electrical characteristics and stability because the tin (Sn) has large spherical s orbitals a high binding energy with oxygen (O). Recently, there have been several reports of ITGO material fabricated via sputtering. Therefore, studies control Sn composition to achieve unique obtain conformal films limited. For these reasons, we evaluated plasma-enhanced atomic layer deposition (PEALD)-derived...
Abstract Despite tellurium being less abundant in the Earth's crust than gold, platinum, or rare‐earth elements, number of industrial applications has rapidly increased recent years. However, to date, many properties and its associated compounds remain unknown. For example, formation mechanisms nanostructures synthesized so far have not yet been verified, it is unclear why can readily transform other like silver telluride by simply mixing with solutions containing ions. This uncertainty...
We successfully realized world first 77‐inch transparent flexible OLED display with Ultra High Definition (UHD) resolution, which can be rolled up to a radius of 80 mm transmittance 40%. The process flow and key technologies fabricate large size panel will discussed.
The leakage current in capacitors future electronics should be highly suppressed to achieve low power consumption, high reliability, and fast data processing. Although considerable efforts have been directed at reducing the current, fundamental studies on effects of doping bulk thin-film materials rarely conducted. Herein, we investigated with acceptor donor elements conduction ZrO2 elucidated underlying charge mechanism. In case ZrO2, electrical conductivity was reliably modulated by type...
In this paper, we present a new isolated Low Vgs NLDMOS in 0.35um BCDMOS process. The proposed LDMOS is fully from substrate and has very lower Rsp(specific on-resistance) than other competitors. This device can apply negative bias to drain it be used AMOLED application. devices 30-40V ranges have the lowest Rsp with competitors 0.13-0.35um technologies. And of 40V range 46.3% last reported. isolation efficiency good performance. Furthermore, logic CMOS all components are compatible
Abstract To improve the photoresist (PR) etching in inductively coupled plasma (ICP) without use of bias power, an impedance control unit is connected series to electrode ICP. This consists inductor and a variable capacitor electrode. With resonance sheath capacitance inductance impedance, current flowing through increases dramatically, resulting higher voltage across larger ion energy loss. The effect on decrease electron density, as observed by Langmuir probe, illustrated global power...
A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset of nanosilver paste ink to the source/drain organic vapor-jet thin layer, TFTs length 20 μm are in precise yet relatively fashion. The oxide formed during processing silver shown help reduce injection barrier between source pentacene, making it possible realize without special treatment for electrodes.
Abstract Low-energy electron beam generation using a DC biased grid was investigated in an inductively coupled plasma (ICP). The measured argon gas at various pressures, ICP source powers, and substrate voltages ( V sub ). At low power (50 W), generated even small values of (10 V), however high (200 only when higher voltage (30 V) applied due to the short sheath thickness on surface. surface is important factor for generating beams because low-energy electrons are blocked. If small, should...
In this paper, we developed high color gamut OLED microdisplay. To minimize the crosstalk, a single stack white structure with RGB main peaks was adopted, and filters were directly patterned on OLED. addition, designed optical crosstalk prediction model, which could predict light loss according to thickness of passivation layer. As result, achieved 125.0% at sRGB, demonstrated
Hysteresis, one of the interesting characteristics inductively coupled plasmas, takes place due to nonlinearities absorbed power or dissipated [M. M. Turner et al., Plasma Sources Sci. Technol. 8, 313 (1999)]. In this work, bias effect on discharge mode transition and its hysteresis is investigated by measuring antenna coil currents, time-average substrate voltages, electron densities, energy probability functions (EEPFs). The behavior comparatively analyzed introducing a global model that...
Te thin films have recently received considerable attention owing to its superior electrical and thermoelectric properties. During the deposition process, if temperature of substrate is raised, high crystallinity improved properties can be expected. In this study, we used radio frequency sputtering for study relationship between temperature, crystal size, performance. As increased from room 100 °C, observed an increase in size x-ray diffraction patterns full-width half maximum calculations....