<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface, <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> high- Notation="TeX">$k$</tex></formula> gate dielectric, and self-aligned NiGe contacts. The subthreshold swing is 71 mV/dec, which better than those of the bulk nanowire...

Nondestructive testing methods are gradually used to monitor the state of power devices, including acoustic emission (AE) testing. However, application AE in devices is still research stage and relies on manual analysis. In this article, stress wave signal device working under different electrical parameters combined with deep learning (DL) for first time judge device. Time-domain signals, frequency-domain amplitudes, envelope their corresponding label training artificial neural network...

High-temperature annealing of the atomic layer deposition (ALD) Al2O3 films on 4H-SiC in O2 atmosphere is studied with temperature ranging from 800 °C to 1000 °C. It observed that surface morphology annealed at and 900 pretty good, while sample becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate as-grown are amorphous begin crystallize Furthermore, C—V exhibit improved interface characterization after annealing, especially for samples indicated...

Abstract Cable trees are primarily employed in industrial products to facilitate energy transfer and information exchange among various components. When utilizing machines for assembly, it is essential convert the wiring plan into a sequence of cable insertion operations executed by machine under constraints. This poses combinatorial optimization problem. In this domain, constraint programming (CP) solvers often exhibit outstanding performance leveraging their robust problem‐modelling...

The traditional condition monitoring (CM) methods for power electronic devices are normally using electrical, magnetic, and thermal sensors. Alternatively, this paper uses the acoustic emission (AE) sensor to measure mechanical stress wave generated inside such as MOSFETs. Specifically, focuses on influence of measured surface, electrical parameters, filters signal reliability repeatability tests. Under single pulse test with 300V drain-source voltage ( <inline-formula...

In order to simplify the fabrication process of silicon carbide power MOSFETs (metal oxide semiconductor field effect transistors), issue simultaneous formation ohmic contacts both p-well and n-source regions SiC devices using same contact materials one step annealing needs be addressed. this study, Ni/Ti/Al p- n-type 4H-SiC with different Ni thicknesses in conditions were fabricated characterized, (80 nm)/Ti (30 nm)/Al nm) combination succeeded forming low specific resistances (SCRs) 4.2×10...

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×10 19 cm -3 are reported. The current-voltage curves of annealed different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) 6.59×10 -5 Ω/cm 2 and 7.81×10 after annealing 900°C for 5min 950°C 2min, respectively. microstructures P-type 4H–SiC investigated by X-ray diffraction (XRD). results XRD show that phases Ti 3 SiC was formed metal/SiC interface annealing, could be...

A silicon carbide bipolar junction transistor with novel emitter field plate (EFP-BJT) design is proposed in this paper. The fabricated EFP-BJT features a metal of the extending electrode 50-nanometer-thick oxide layer overlapped on extrinsic base surface. contrast experimental results show that 56% increase maximum current gain obtained by compared conventional SiC BJT (C-BJT), EFP-BJT's 43 measured at collector density (J C ) 716 cm−2 corresponding to specific on-state resistance (R SP_ON)...

The static characteristics and switching of traditional planar SiC MOSFET, common super-junction MOSFET with optimized PN pillar numbers are studied. results show that the break voltage is 1710V specific on-resistance 4.862 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> numbers. characteristic result indicates increasing number can effectively increase breakdown reduce on-resistance. has a smaller turn-off time than planer MOSFET....

The emitter turn-off (ETO) thyristor is a new type of MOS-controlled that has wide reverse-biased safe operation area (RBSOA) due to its unity-gain capability. Because the negative feedback provided by MOSFET, ETO also current saturation forward biased (FBSOA) small experimentally demonstrated. results show excellent capability can be used control turn-on di/dt. Issues related realizing large ETO's FBSOA are discussed.

A sponge-like 3D Zn/Co co-doped porous carbon composite (Zn/Co-MPC) was successfully prepared using edible fungus residues as a template through facile pyrolysis method in the current design. The optimized Zn/Co-MPC-0.3 characterized by controllable release of bactericidal particles, fine sterilization ability and excellent magnetic recycle performance. zinc oxide nanoparticles (ZnO NPs) within acted an efficient killer germs, while biochar could effectively achieve ZnO NPs, endowing...

As an electric coupling sensor, the D-dot voltage sensor can achieve non contact measurement of voltage. With advantages simple structure, a high dynamic range and bandwidth, it meet needs accurate [1][2] . Thus has great application prospects in on-line monitoring, relay protection or other fields power system. This paper considered operation three-phase lines, established simulation model platform Ansoft Maxwell 3D. working conditions, we get distributed parameters system under lines...

The characteristics and fabrication process of VD-MOSFET are presented in this paper. accurate modeling is validated by the data caught experiments structure parameters with real physical meanings including I-V capacitance characteristics. What's more, double pulse test used for dynamic validation. It shown that simulation result meets experiment excellent over entire range.

An optimized edge termination structure by increasing the coverage rate of metal plates at area is presented for 3.3kV IGBTs. This indicates a better stability after 168 hours High temperature reverse bias (HTRB) experiment. The electric potential contours and surface field distribution with variation oxide charge are analyzed through numerical simulation. It realized that less sensitive charge. Thus more uniform each ring location to weaken concentration. Therefore, breakdown voltage stable...

In this paper the electrothermal properties of 4H-SiC JBS (Junction barrier Schottky) diode is investigated. FloTHERM and Silvaco TCAD are used for simulation at same time. Firstly, effect R jc (junction-to-case thermal resistance) on junction temperature investigated, result shows that more sensitive to in current heating mode because some kind positive feedback. Then, a pulse applied JBS, feedback especially noticeable. Finally, will be compared with PIN under high density pulsed...

High quality SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with atomic flat interface was grown on SiC rapidly at room temperature growth rate of over 3 nm/min using high pressure (~6 kPa) microwave plasma oxidation method. Thermodynamic calculation reveals that oxygen is helpful to remove the residual carbon and suppress (g) desorption vacancy formation, thus maintain a fast quality. Atomically very low Dit (<; 5 xl0 <sup...