A5003295563- Semiconductor materials and devices
- Diamond and Carbon-based Materials Research
- Carbon Nanotubes in Composites
- Semiconductor Quantum Structures and Devices
- Force Microscopy Techniques and Applications
- GaN-based semiconductor devices and materials
- Metal and Thin Film Mechanics
- Graphene research and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Molecular Junctions and Nanostructures
- Advanced Semiconductor Detectors and Materials
- Chalcogenide Semiconductor Thin Films
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- Ga2O3 and related materials
- Mechanical and Optical Resonators
- Plasma Diagnostics and Applications
- Quantum Dots Synthesis And Properties
- Nuclear Engineering Thermal-Hydraulics
- ZnO doping and properties
- Nuclear reactor physics and engineering
Universidad de Cádiz
2021-2024
Toshiba (Japan)
2004-2019
National Institute of Advanced Industrial Science and Technology
2007-2018
Ikeda Municipal Hospital
2018
Japan Science and Technology Agency
2005-2013
Japan Atomic Energy Agency
2004-2012
Photonics Electronics Technology Research Association
2012
Doshisha University
2012
Mirai Hospital
2009-2011
Toshiba (South Korea)
2008-2010
We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the <11*BAR*2*BAR*0> direction substrate, and resultant facet analyzed using an atomic force microscope (AFM) theoretical calculation. A single peak emisson, at wavelength 417.5 nm, full width half-maximum 0.15 obtained. The threshold current density 50 kA/cm 2 voltage for 20 V.
Abstract Reverse characteristics of diamond PiN diodes were studied under high reverse bias for voltage applications. We have fabricated vertical diode structures consisting a phosphorus‐doped n‐type layer and an undoped intrinsic on heavily boron‐doped p‐type substrate with Au/Pt/Ti Ohmic contacts both the top bottom surfaces. Temperature dependent current–voltage ( I – V ) capacitance–voltage C measurements carried out to reveal characteristics. The exhibited sharp repeatable breakdown...
The Ge depth profile and generation of dislocations associated with oxidation SiGe-on-insulator (SGOI) substrates are examined from the viewpoint temperature dependence. It is found that profiles in SGOI layers after strongly dependent on temperature. This fact explained by competitive process between accumulation atoms at SiGe/thermal oxide interface, determined rate, diffusion toward during substrates. While abrupt obtained low-temperature causes dislocations, high content no can be...
We report a synthesis of closely packed multi-walled carbon nanotube (MWCNT) forest by multi-step growth method, including new approach to immobilize catalytic nanoparticles, using plasma-based chemical vapor deposition. The CNT packing density reaches one-half the theoretical value, where space 30–40% is filled with MWCNTs. This value approximately one order magnitude larger than that as-grown synthesized conventional methods. method applicable even at spatially restricted region, for...
Implemented in a 0.15/spl mu/m CMOS process, the spread-spectrum clock generator uses fractional PLL controlled by /spl Delta//spl Sigma/ modulator An adaptive level shifter is adopted for expanding input range of modulator. The 1.5GHz prototype achieves peak spurious reduction 20.3dB and random jitter 8.1 ps 250-cycle averaging period.
Abstract Electrical characteristics of n‐type diamond Schottky diodes and metal/diamond interfaces have been systematically investigated for phosphorus (P)‐doped homoepitaxial layers. The current–voltage ( I–V ) the Ni/n‐type diode show excellent rectification properties from 297 K to 773 K. ideality factor ratio were 1.0 ∼10 6 at +10 V 573 K, respectively. rectifying deteriorated with increasing P concentration in Temperature‐dependent capacitance–frequency C–f conductance–frequency G–f...
Abstract n‐Type diamond formation is one of the most important issues for electronic application diamond. Phosphorus best n‐type dopant candidate at moment. We have succeeded in growing high‐quality phosphorus‐doped thin films on {111} substrates. Although ionization energy phosphorus donor large (0.57 eV), conductivity clearly observed by Hall measurements. The mobility as high 660 cm 2 /(V s) room temperature. In this paper, current status research mentioned with focus mainly growth...
A method including surface silanization, phase transfer and self-assembly, SiO2 shell growth has been developed to incorporate multiple hydrophobic CdSe/ZnS nanocrystals into beads where they are well suited for bio-application due their high brightness, less-cytotoxic, non-blinking nature.
Temperature-dependent current–voltage (I–V), capacitance–voltage (C–V) measurements, and frequency-dependent C–V measurements have been carried out to investigate electrical properties of phosphorus (P)-doped n-type homoepitaxial diamond layers. We fabricated lateral dot-and-plane (with ring-shaped-gap) Schottky barrier diodes. Frequency-dependent capacitance revealed the existence a deep donor level. deduced that net concentration was 6.2×1017 cm−3 corresponding built-in potential 4.0 eV,...
Among diamond-based devices, the Schottky barrier diode (SBD) shows significant promise, achieving high breakdown voltages (9.5 MV·cm−1) and reduced serial resistance (1 Ω) through structural advancements. The performance of SBDs depends on interface between contact, surface termination, diamond. Studies have highlighted impact configuration height (SBH), particularly for hydrogen (H) oxygen (O)-terminated diamonds. H-terminated surfaces exhibit negative electron affinity (NEA), whereas...
We have clarified the effect of H2 and NH3 on passivation Mg acceptor in p-type GaN films grown by metalorganic chemical vapor deposition. It has been found that small amount carrier gas strongly influences electrical property Mg-doped films. Low-resistivity obtained H2-free growth without any post-treatments. Its concentration is as high conventional H2-rich with subsequent thermal annealing. also hydrogen produced dissociation does not prevent from electrically activating growth.
Multiwalled carbon nanotubes (CNTs) have been grown by remote plasma-enhanced chemical vapor deposition at temperatures as low 400 °C. In via formation, the selective growth of CNT bundles in holes 430 °C and mechanical polishing for planarization performed. The electrical evaluation single vias with various diameters reveals that resistance is inversely proportional to area. This result indicates CNTs are uniform quality density stable contact formations obtained. Moreover, resistances...
Carbon nanotube (CNT) growth at temperatures below 400 °C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of power carried out in order to decrease the amount all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode introduced removal charged electrons. The negative bias 50 V most effective for rate. High-quality CNT with rate 98 nm/min successfully obtained °C. results suggest that both particles control radicals...
We explored the characteristic behavior of low-temperature graphene growth on catalytic metal films. The results suggested that originates from crystalline facets with specific angles respect to orientation metals at low temperatures, which is different conventional models. G/D ratio Raman spectrum film was affected by both number and width terrace. Because this behavior, it important prepare surface conditions a smaller wider terrace for high-quality temperatures.
We fabricate planarized carbon nanotube (CNT) via interconnects using chemical mechanical polishing (CMP). The selective growth of CNT bundles in holes and the filling spin-on-glass into space among CNTs are performed, followed by a CMP process. resistance is reduced post-CMP treatment post-annealing due to improvement top contact formation. measured higher than bundle estimated from an individual CNT. This indicates that interconnect.
We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between CNT and metal electrodes. For bottom formation, a TiN/TaN multilayer Cu wiring layer is applied to suppress formation highly resistive oxide TaN barrier layer. The top electrode good coverage CNTs reduces resistance. current–voltage characteristics ultrafine exhibit ohmic behavior. resistance interconnect inversely proportional area, indicating that bundles are...
The mechanism of imprint in FE-HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is investigated detail. It clearly shown that the can be recovered by additional pulses and domain switching indispensable for recovery. results from sub-loop measurement suggest each considered to independent. Switching time measurements reveal well described nucleation limited kinetic model. In addition, a clear correlation between gate leakage current...