Yameng Sun

ORCID: 0000-0002-4692-1249
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About
Contact & Profiles
Research Areas
  • Electronic Packaging and Soldering Technologies
  • 3D IC and TSV technologies
  • Copper Interconnects and Reliability
  • Metal and Thin Film Mechanics
  • Advanced Surface Polishing Techniques
  • Silicon Carbide Semiconductor Technologies
  • Conducting polymers and applications
  • Advanced Sensor and Energy Harvesting Materials
  • Microstructure and mechanical properties
  • Diamond and Carbon-based Materials Research
  • Organic Light-Emitting Diodes Research
  • Histone Deacetylase Inhibitors Research
  • Advanced materials and composites
  • CAR-T cell therapy research
  • Integrated Circuits and Semiconductor Failure Analysis
  • Induction Heating and Inverter Technology
  • Material Properties and Failure Mechanisms
  • Multilevel Inverters and Converters
  • Powder Metallurgy Techniques and Materials
  • Aluminum Alloys Composites Properties
  • Additive Manufacturing and 3D Printing Technologies
  • Boron and Carbon Nanomaterials Research
  • Electromagnetic Compatibility and Noise Suppression
  • Electron Spin Resonance Studies
  • Injection Molding Process and Properties

Wuhan University
2021-2025

Wuhan University of Technology
2021-2025

Sun Yat-sen University Cancer Center
2021-2025

Shaanxi University of Science and Technology
2020-2022

Sun Yat-sen University
2021

Traditional EZH2 inhibitors are developed to suppress the enzymatic methylation activity, and they may have therapeutic limitations due nonenzymatic functions of in cancer development. Here, we report proteolysis-target chimera (PROTAC)-based degraders target whole lymphoma. Two series were designed synthesized hijack E3 ligase systems containing either von Hippel–Lindau (VHL) or cereblon (CRBN), some VHL-based compounds able mediate degradation. best degraders, YM181 YM281, induced robust...

10.1021/acs.jmedchem.1c00460 article EN Journal of Medicinal Chemistry 2021-07-01

As application conditions become increasingly demanding and usage becomes more aggressive, the performance of traditional insulated gate bipolar transistor (IGBT) fast recovery diode (FRD) systems can no longer meet required specifications. In these systems, FRDs are to carry load current allow return from IGBTs. Consequently, reverse significantly restricts overall efficiency system. Therefore, how predict characteristics with greater precision has attracted considerable attention. this...

10.3390/electronics14030570 article EN Electronics 2025-01-31

Optically clear adhesive (OCA) has been widely used in flexible devices, where wavy stripes that cause troublesome long-term reliability problems often occur. The complex mechanical behavior of OCA should be studied, as it is related to the aforementioned problems. Therefore, necessary establish reasonable constitutive models for deformation and stress control. In this work, hyperelastic viscoelastic tests were carried out systematically relative material established. We found temperature a...

10.3390/mi13020301 article EN cc-by Micromachines 2022-02-15

Moore's law has remarkably promoted the development of semiconductor technology over last decades. The advanced packaging involving novel materials, structures, and processes contributed significantly to achieving excellent performance. Among various forms packaging, wafer-level-fan-out is superior standard wafer-level in that it allows more input/output (I/O) connections, leading landmark for high-end devices. Furthermore, fan-out package (FOWLP) enables heterogeneous integration chiplets...

10.1109/tcpmt.2021.3115571 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2021-09-24

Ag paste has been recognized as a promising substitute for Sn/Pb solder in SiC or GaN power electronic devices, owing to its ability withstand high temperatures and facilitate low-temperature packing. The reliability of these high-power circuits is greatly influenced by the mechanical properties sintered paste. However, there exist substantial voids inside silver layer after sintering, conventional macroscopic constitutive models have certain limitation describe shear stress-strain...

10.3390/ma16124472 article EN Materials 2023-06-19

In the interconnects of microelectronic package with high current density and high-frequency fluctuation, electromigration (EM) events cause cavities nucleation at metal lines cathode hillock pile-up anode, which further lead to short circuit/open circuit influence overall device reliability substantially. this work, mechanical modeling EM-induced cavity failure was investigated a theory efficient EM morphology evolution based on physics comprehensively introduced. According mass diffusion...

10.1109/ted.2022.3193014 article EN IEEE Transactions on Electron Devices 2022-07-27

This paper presents an in-depth analysis of the oscillation phenomenon occurring in multi-chip parallel automotive-grade power modules under short-circuit conditions and investigates three suppression methods. We tested analyzed two commercial modules, one containing chips other a single chip, found that gate oscillations were more likely to occur packaged than single-chip modules. Through experimental simulation analyses, we observed mainly caused by interaction between internal parasitic...

10.3390/s24092858 article EN cc-by Sensors 2024-04-30

There is an increasing demand for the use of automotive sensors where complex working environments may easily lead to failure. Wire pull and shear test models based on finite-element analysis are established evaluate their reliability by investigating failure mode mechanism gold wire bonding. The effect force position also analyzed. bonding was verified experiments, which consistent with simulation result. results show that: (1) three-dimensional quantitative modeling reveals process...

10.3390/mi14091695 article EN cc-by Micromachines 2023-08-30

The continuous demand for high-speed, low-power consumption and multi-functionality of new generation electronic products has led to an exponential increase high-yield high-reliability packaging technologies, which promoted the application 7nm node process technology promote higher I/Os smaller bump pitches. advantages copper pillar bump, was widely used in high-density packaging, include fine pitch, high strength, low interconnection resistance, excellent electromigration performance,...

10.1109/icept52650.2021.9567984 article EN 2021-09-14

Recently, IGBT has found an increasingly wide utilization, resulting in higher power density and thermal flux difficulty, which promotes the researches of new materials structures to face up challenges reliability. As crucial step packaging process, reflow process is also important part quality control, while typical module will result large residual stress warpage due various temperature characteristics mismatch materials. Existing mainly improve welding by changing control mode, however,...

10.1109/wipdaasia51810.2021.9656010 article EN 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) 2021-08-25

The Cu Via structure in the back end of line (BEOL) process was generally made up heterogeneous materials with different thermal expansion coefficients (Cu, Si substrate, SiCOH dielectric layer, Ta/TaN SiCN barrier etc.), and mismatch could further lead to failure entire interconnection. Since temperature changed during manufacture would definitely cause internal stress due mismatch, thermomechanical stability long-term usage are no doubt affected. Therefore, it is quite necessary promote...

10.1109/eptc53413.2021.9664000 article EN 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC) 2021-12-07
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