A5100407448- Magnetic properties of thin films
- Magnetic Properties and Applications
- Advanced Memory and Neural Computing
- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Advanced battery technologies research
- Electrocatalysts for Energy Conversion
- Animal Disease Management and Epidemiology
- Viral Infections and Immunology Research
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- ZnO doping and properties
- Metallic Glasses and Amorphous Alloys
- 2D Materials and Applications
- Vector-Borne Animal Diseases
- Organic Light-Emitting Diodes Research
- Magnetic Properties of Alloys
- Mechanical and Optical Resonators
- Advanced Condensed Matter Physics
- Ferroelectric and Piezoelectric Materials
- Magneto-Optical Properties and Applications
- Topological Materials and Phenomena
- Catalytic Processes in Materials Science
- Heusler alloys: electronic and magnetic properties
- Innovative Energy Harvesting Technologies
Lanzhou University
2014-2025
Lanzhou Veterinary Research Institute
2022-2025
Chinese Academy of Agricultural Sciences
2022-2025
Shanxi Normal University
2019-2024
Peking University
2023-2024
Puer University
2022
Shandong Normal University
2020
Hong Kong Baptist University
2016
State Key Laboratory of Advanced Electromagnetic Engineering and Technology
2013
Huazhong University of Science and Technology
2013
The non-volatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in-memory computing, neuromorphic computing and stochastic computing. Two-dimensional (2D) materials their van der Waals heterostructures promote the development of MRAM technology, due atomically smooth interfaces tunable physical properties. Here we report all-2D memories featuring all-electrical data reading writing at room temperature based on WTe2/Fe3GaTe2/BN/Fe3GaTe2...
Current-induced spin-orbit torques (SOTs) enable efficient electrical manipulation of the magnetization in heterostructures with a perpendicular magnetic anisotropy through Rashba effect or spin-Hall effect. However, conventional SOT-based heterostructures, an in-plane bias field along current direction is required for deterministic switching. Here, we report that field-free SOT switching can be achieved by introducing wedged oxide interface between heavy metal and ferromagnet. The results...
Spin–orbit torque (SOT) has been extensively applied to magnetization manipulation in low power consumption logic and memory devices. However, it is believed that materials with strong spin–orbit coupling (SOC) are indispensable for magnetic generation. Recently, theoretical studies have indicated the oxides of light weak SOC can provide a sizable orbital (OT), inducing switching. Here, we experimentally report extreme enhancement efficiency spin Hall angle through natural oxidation Cu...
ABSTRACT Neutralizing antibodies provide vital protection against foot-and-mouth disease virus (FMDV). The neutralization test (VNT) is a gold standard method for the detection of neutralizing antibodies. However, its application limited due to requirement live and unsuitability large-scale serological surveillance. In this study, porcine broadly monoclonal antibody (PO18-10) FMDV was obtained from heterologous sequentially vaccinated pig using single-B-cell technology. A competitive...
Abstract Current-induced magnetization reversal via spin-orbit torques (SOTs) has been intensively studied in heavy-metal/ferromagnetic-metal/oxide heterostructures due to its promising application low-energy consumption logic and memory devices. Here, we systematically study the function of Joule heating SOTs current-induced using Pt/Co/SmO x Pt/Co/AlO structures with different perpendicular magnetic anisotropies (PMAs). The SOT-induced effective fields, anisotropy field, switching field...
The interfacial interaction including chemical bonding or electron transfer and even physisorption in composite electrocatalysts has a considerable effect on electrocatalytic oxidation reaction. Herein, we report tremendously enhanced catalytic activity excellent durability for the ethanol electro-oxidation reaction NiMoO4-C-supported Pd composites (Pd/NiMoO4-C) compared to commercial Pd/C (10%) catalyst. X-ray powder diffraction, transmission microscopy, photoelectron spectroscopy...
We report a simple approach to the fabrication of hierarchical nanoparticle arrays and film patterns using novel combination colloidal lithography (CL), two-step self-assembly, reactive-ion etching (RIE). In this approach, uniform (∼15−50 nm particle diameter) is first deposited on substrate. Then, larger (several hundred thousands nanometers microparticles with different composition are self-assembled into well-ordered atop film. Next, used remove parts initial upper layer large particles...
Current induced domain wall motion (CIDWM) was studied in Pt/Co/Ta structures with perpendicular magnetic anisotropy and the Dyzaloshinskii–Moriya interaction (DMI) by spin-orbit torque (SOT). We measured strength of DMI SOT efficiency variation thickness Ta using a current hysteresis loop shift method. The results indicate that stabilizes chiral Néel-type (DW), DW can be driven enhanced large generated from Pt opposite signs spin Hall angle stacks. CIDWM velocity, which is 104 times larger...
An electric-field pulses driven magnetoelectric memory cell in a single layered ferromagnetic thin film was fabricated by direct-current magnetron sputtering Ru/Fe65Co35 on ferroelectric (110) [Pb(Mg1/2 Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The magnetization the orthogonal directions can be reset positive/negative electric fields pulse PMN-PT/Ru/FeCo heterostructures due to strain mediated converse effect. high (low) resistance state realized under negative (positive) anisotropy...
Magnetization switching via charge current induced spin-orbit torques (SOTs) in heavy metal/ferromagnetic metal/heavy metal heterostructures has become an important issue due to its potential applications high stability and low energy dissipation spintronic devices. In this work, based on a Pt/Co/Ta structure with perpendicular magnetic anisotropy (PMA), we report the effect of inserting non-metal C interlayer between Co Ta current-induced magnetization switching. A series measurements...
The epitaxial growth of FeSi film on (001) 0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-0.32PT) was fabricated by sputtering and confirmed high-resolution transmission electron microscopy. A fourfold symmetric angular remanent magnetization curve as-deposited thin is well fitted theoretically considering the cubic magnetocrystalline anisotropy. We found that anisotropy decreases slightly when an electric field (E) applied Pt/PMN-0.32PT/FeSi/Ta heterostructures with Pt layer as positive electrode....
Heavy metal/ferromagnetic layers with perpendicular magnetic anisotropy (PMA) have potential applications for high-density information storage in racetrack memories and nonvolatile random access memories. In these devices, deterministic magnetization switching has been achieved via electric current induced spin orbital torques (SOTs) the assistance of a directional external in-plane bias field, which causes technological obstacles real application SOT based spintronic devices. Here, we...
Magnetic damping constant (α) is one of the key parameters to determine critical current density spin-transfer-torque devices and switching time magnetization for ultra-high-frequency devices. In this work, Gd doped FeCo films were fabricated investigate α based on ferromagnetic resonance technique. doping not only can efficiently decrease magnetic inhomogeneity extrinsic part but also Landé g-factor intrinsic α. The obtained was roughly proportional (g-2)2 anisotropic constant, indicating...
Spin–orbit torque (SOT) induced magnetization switching is investigated in Pt/Co/Ta stacks with perpendicular magnetic anisotropy the variation of thickness Ta layer (t Ta). SOT characterized by an effective spin Hall angle θ SH, which determined anomalous resistance measurements method based on a macrospin model. A high charge current efficiency achieved enhanced injection currents from bottom Pt and top opposite signs SH. When t = 4 nm, SH for shows maximum value around 0.356, larger than...
We studied the current-induced spin–orbit torques in a perpendicularly magnetized Pt (1 nm)/Co (0.8 nm)/Pt (5 nm) heterojunction by harmonic Hall voltage measurements. Owing to similar Pt/Co/Pt interfaces, originated from Rashba effect are reduced, but contribution spin is still retained because of asymmetrical thicknesses. When temperature increases 50 300 K, two orthogonal components effective field, induced torques, reveal opposite dependencies: field-like term (transverse field)...
Perpendicular magnetic anisotropy (PMA) and spin–orbit torques (SOTs) are studied in a perpendicularly magnetized ultrathin Co film sandwiched between heavy metal Pt Ta with an interfacial decoration performed by inserting 3d transition Cr layer thickness of 2 nm the Ta. A significant enhancement perpendicular field ( Oe) is established estimated measuring extraordinary Hall resistance due to decoration. The improved antidamping-like ∼18.59 × 10−6 Oe/(A·cm−2) reveals large effective spin...
The influence of C insertion on Dzyaloshinskii–Moriya interaction (DMI) as well current-induced domain wall (DW) motion (CIDWM) and tilting in Pt/Co/Ta racetracks is investigated via a magneto-optical Kerr microscope. similar DMI strength for Pt/Co/C/Ta samples reveals that mainly comes from the Pt/Co interface. Fast DW velocity around tens m/s with current density several MA/cm2 observed Pt/Co/Ta. However, it needs double times larger to reach same magnitude Pt/Co/C/Ta, indicating related...
We study the temperature (T) dependence of anisotropy field (Hk), switching (Hsw), saturation magnetization (Ms), spin–orbit torques (SOTs), and critical current density (Jc) as well Joule heating effect in current-induced using Pt/Co/C stacks with perpendicular magnetic anisotropy. The results show that Hk remains roughly constant Jc gradually decreases T increases. increased damping-like-SOT-induced effective per unit (ΔHDL/Je) increasing reveals enhanced SOT efficiency at higher T....