To avoid carbonation of small organic molecule oxidation in alkalines by using noble metals acid, as well to keep the proton transfer capability polyaniline (PAn) an acidic medium, we investigated formic acid on PAn-supported Pd catalysts a weak solution (NH4)2SO4. PAn was electrochemically polymerized porous carbon electrodes (PCE) and glass (GCE) form PAn/PCE PAn/GCE, which particles were deposited electrochemical deposition. The properties fabricated examined with aid scanning electron...

Two fully self-aligned via (SAV) integration schemes by metal recess approach and area-selective dielectric-on-dielectric (DoD) method are reported in this paper. A topography with enlarged diagonal distance is essential for the vias to be self-aligned. The encounters challenge of poor uniformity, high surface roughness, degraded integrity. DoD featuring an upward dielectric terrace deposited selective-SAM-blocking shows two orders magnitude improvement via-to-line time dependent breakdown...

High-performance Si thin-film transistors (TFTs) on the recessed-channel strips with under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A was added as a light absorption layer to suppress solidification along edge of strip. Thus, only one primary grain boundary perpendicular strip formed in middle recessed region during ELC. The single-crystal-like TFTs one-half are capable excellent field-effect mobility 640 cm <sup...

In this study, the densification effects of carbon nanotube (CNT) pillar array have been proved to significantly increase field emission characteristics. Without damage crystallinity CNTs, CNT density each densified can be increased about 6.25 times as compared as-grown ones. Consequently, pillars exhibit higher electrical conductivity, better contacts, and more sites, which are favorable properties. What's more, optimum characteristics occur at condition R/H = 2 with H 30 μm for both...

This letter reports of the fabrication high-performance p-channel polycrystalline germanium (poly-Ge) thin-film transistors (TFTs) using continuouswave laser crystallization (CLC). During CLC process, direction matches scanning due to a strong temperature gradient in melting region. makes it possible fabricate high-quality poly-Ge thin films with 1-D longitudinal grains as large 2 μm × 20 μm. We fabricated proposed Ge TFTs channel width 0.7 and length each Consequently, single-crystal-like...

Abstract In this study, a simple densification method for carbon nanotube (CNT) pillars is proposed to achieve high-performance field emission characteristics and stable emission. Through capillary force during solution evaporation, the CNT density in each pillar can be increased by about six times without causing damage crystallinity of CNTs. The densified exhibit lower series resistance, sharper pillars, better contacts, higher thermal conductivity, mechanical stiffness than as-grown ones....

High-performance polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs) have been demonstrated via continuous-wave laser crystallization (CLC) to exhibit the low subthreshold swing of 216 mV/decade and high ON/OFF ratio 1.6×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> . In addition, thermal stress ~800 MPa induced from CLC process also contributed single-crystal-like silicon NW TFTs achieve an excellent field-effect...

The high-performance pH-sensing membrane of extended-gate field-effect transistors (EGFET) composed high-conductivity horizontally aligned carbon nanotube thin films (HACNTFs) after oxygen plasma treatment is successfully demonstrated. 10-µm-wide catalytic metal lines with 60 µm interspace produced CNT vertical plates, and the plates were mechanically pulled down densified to form HACNTFs. A large amount oxygen-containing functional groups are decorated on CNTs treatment. These act as...

This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with recessed-channel (RC) structure for high-performance p-channel Ge thin-film transistors (TFTs). Using ELC, large longitudinal grains a single perpendicular grain boundary (GB) in center recessed region were formed. can be attributed to lateral growth from un-melted solid seeds thick toward complete melting during ELC. Consequently, proposed RC-ELC TFTs possessing without GB channel exhibited...

High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type a grain size as large 1 µm were ELC in the super lateral-growth regime CD at dose of × 1013 cm−2 or higher. Consequently, superior field-effect mobility 271 cm2 V−1 s−1 high on/off current ratio 2.7 103 obtained for p-channel TFTs channel width length both 0.5...

Sulfuric acid is widely used in several industrial fields, such as pickling, cleaning and descaling, which cause serious corrosion issues.Especially, copper being applied vulnerable to be corroded by the acid.The usage of inhibitor one most important techniques for controlling corrosion.Several organic inhibitors containing hetero-atom, π-electrons double bond have been inhibition copper, are found exhibit high inhibiting properties providing electrons interact with metal surface.However,...

The Wind Erosion Prediction System (WEPS) is a computer model for the simulation of windblown sediment loss from field. used to evaluate effect alternative cropping systems and management scenarios on wind erosion. WEPS requires hourly data, which many locations are unavailable. Therefore, objective our research was investigate whether speed direction can be simulated adequately temporally limited data determine suitable times day take measurements if only few per made. For three (La Junta,...

The crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. different grain sizes CLC poly-Ge observed in their three regions, which 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> , 680 nm, and 90 nm for the central, transition, edge respectively....

Modulating the water pulse time during thermal atomic layer deposition is an effective approach to enhancing ferroelectric properties of undoped HfO2 thin films. Through grazing incidence X-ray diffraction (GI-XRD), it was observed that a shorter can inhibit formation monoclinic phase and thereby obtain good remanent polarization. Transmission electron microscopy (TEM) images GIXRD analysis were used reveal crystallization conditions By modulating all samples, no impurities found in these...

Abstract High-quality polycrystalline-germanium (poly-Ge) thin films have been successfully fabricated by excimer laser crystallization (ELC). Grains as large 1 µm were achieved ELC at 300 mJ/cm 2 . Meanwhile, the defect-generated hole concentrations in Ge significantly reduced. Furthermore, majority carriers could then be converted to n-type counter doping (CD) with a suitable dose. Then, high-performance p-channel thin-film transistors (TFTs) high on/off current ratio of up 1.7 × 10 3 and...

Programmable metallization cell (PMC) memory devices with oxidized Cu-Ti alloy films as the bottom electrodes have been shown to exhibit a superior on/off state current ratio (memory window) of high 103 and endurance 3000 cycles compared conventional pure copper unoxidized electrodes. It was conjectured that could obtain appropriate amount atoms format rupture conductive filaments in resistive switching layer. Furthermore, alloys control Cu cations from Cu2O amountto achieve most favorable...

This letter reports the fabrication of polycrystalline silicon (poly-Si)tunneling field effect transistors(Tunneling FETs) using green nanosecond laser crystallization (GLC). During GLC process, Si is full-melted by scanning, hence recrystallized poly-Si thin films with grain size as large 1.2 μm are attained. makes it possible to fabricate tunneling FET high-quality films. Compare FETs fabricated solid phase (SPC), ones via show better subthreshold swing (S.S) 418 mV/dec. and larger on/off...

This paper reports the demonstration of structural effects on excimer laser crystallization (ELC) for Si strip with a recessed-channel structure silicon nitride under-layer (RCS-ULN). We revealed that single location-controlled grain boundary (GB) oriented normal to in middle site without any other GB recessed region can be attained via ELC RCS-ULN structures short between neighboring long thick regions narrow strip. attributed effective production significant 2D lateral thermal gradient and...

Using a microstrip line layout, low minimum noise figure (NFmin) of 0.46 dB at 10 GHz, along with 16.6 associated gain has been measured directly for an 8-finger 90nm node MOSFET (LG = 65nm). A self-consistent DC, ft and NFmin device model was developed, which allows prediction the down-scaling trend RF MOSFETs into deep nm scale.

By applying 0.7% tensile strain to the flexible die of a 0.13 mum thin-body (40 mum) Si MOSFET mounted on plastic, both DC and RF performance have been improved. The current I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d,sat</sub> was 14.3% higher, f xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> increased from 103 118 GHz with NF xmlns:xlink="http://www.w3.org/1999/xlink">min</sub> decreasing 0.89 0.75 dB at 10 GHz. These improvements...

Process-induced warpage caused by high-density interconnects in the back-end of line (BEOL) structure, may affect performance and reliability product during packaging process. In this paper, a BEOL structure is used to develop process-oriented simulation methodology optimize design predict warpage. To reduce time obtain accurate predictions, equivalent material method residual stress are our proposed method. The layer-by-layer predictions matched measurement data.