Multilevel programing and charge transport characteristics of intrinsic SiOx-based resistive switching memory are investigated using TaN/SiOx/n++Si (MIS) TiW/SiOx/TiW (MIM) device structures. Current high- low-resistance states (HRS LRS) studied in both structures during multilevel operation. Analysis thermal response demonstrates that the effective electron energy barrier is strongly dependent on resistance programed state, with estimates 0.1 eV LRS 0.6 HRS. Linear data fitting conductance...

The resistive switching characteristics and mechanism in active SiOx-based memory have been investigated by using a simple TaN/SiO2/n++ Si-substrate test structure. Controlling the oxygen content SiOx layer not only improved device yield but also stabilized electrical characteristics. current transport behavior high- low-resistance states, thickness effect layer, area effect, multilevel controlling compliance limitation stopped voltage values studied. results indicate that occurs localized...

Stripe rust (Puccinia striiformis f. sp. tritici; Pst) and powdery mildew (Blumeria graminis Bgt) are important diseases of wheat (Triticum aestivum) worldwide. Increasingly evidences suggest that long intergenic ncRNAs (lincRNAs) developmentally regulated play roles in development stress responses plants. However, identification lincRNAs is still limited comparing with functional gene expression. The transcriptome the hexaploid line N9134 inoculated Chinese Pst race CYR31 Bgt E09 at 1, 2, 3...

Electroforming and resistive switching data are presented models given addressing the unusual operating features of SiO₂ memory.

Imbalanced data are very common in the real world, and it may deteriorate performance of conventional classification algorithms. In order to resolve imbalanced problems, we propose an ensemble method that combines evolutionary under-sampling feature selection. We employ Bootstrap original generate many sample subsets. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula>...

We have applied single InP barrier layer with different thicknesses and InP/In0.52Al0.48As double-barrier to In0.7Ga0.3As Al2O3 metal-oxide-semiconductor field-effect-transistors (MOSFETs) investigated their effects on device performance. MOSFETs 3 nm single-barrier attain 22% higher peak effective mobility while devices 5 58% than the ones without barrier. Devices using achieve enhancement at both low-field (68% mobility) high-field (55%) compared High channel of 4729 cm2/V s has been...

The physical mechanisms of unipolar resistive switching (RS) in SiOx-based memory are investigated using TaN/SiOx/n++Si and TiW/SiOx/TiW device structures. RS is independent SiOx thickness area, confirming that occurs a localized region along filamentary pathway. Results from experiments varying electrode type, series resistance, the oxygen content SiOxNy materials show potential to optimize performance control programming window. Device with stoichiometry near SiO2 found have better...

Flow injection mass spectrometry (FI-MS) is widely employed for high-throughput metabolome analysis, yet the absence of prior separation leads to significant matrix effects, thereby limiting coverage. In this study, we introduce a novel photosensitive MS probe, iTASO-ONH2, integrated with FI-MS establish strategy submetabolome analyses. The iTASO probe features conjugated-imino sulfonate moiety efficient photolysis under 365 nm irradiation and reactive group selective metabolite labeling....

Abstract Background Virtual Reality (VR) digital tourism refers to the use of VR technology combined with digitalization create virtual experiences cultural and elements. Through technology, users can immerse themselves in exploring various heritage, historical scenes, tourist attractions, etc., achieving spaces. With continuous advancement it has also been widely applied field mental illness. bring patients into a environment provide them immersive therapy, effectively alleviating their...

The resistive switching between high impedance (“off” state) and low (“on” is demonstrated on e-beam evaporated SiOx/Si random access memory devices in this paper. set reset voltages are independent of the device perimeters oxide thicknesses after electroforming. A circuit model including filament conductance G proposed to explain measured “on” state capacitances under frequency ranges from 1 KHz MHz. electrochemical redox process adopted formation Si during electroforming switching. “On”...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Yao-Feng Chang, Pai-Yu Chen, Yen-Ting Fei Xue, Yanzhen Wang, Zhou, Burt Fowler, Jack C. Lee; Study of polarity effect in SiOx-based resistive switching memory. Appl. Phys. Lett. 30 July 2012; 101 (5): 052111. https://doi.org/10.1063/1.4742894 Download citation file: Ris (Zotero) Reference Manager EasyBib...

Thinopyrum ponticum (2n=10x=70), a member of the tertiary gene pool wheat (Triticum aestivum L.), harbors many biotic and abiotic stress genes. CH10A5, novel disomic substitution line from cross T. cv. 7182 Th. ponticum, was characterized by cytogenetics molecular marker analysis. Cytological observations showed that CH10A5 contained 42 chromosomes formed 21 bivalents at meiotic metaphase I. Genome in situ hybridization (GISH) analysis indicated two its came J s genome 15K array mapping...

We have investigated device performance for In0.7Ga0.3As and In0.53Ga0.47As metal-oxide-semiconductor transistors (MOSFETs) with without InP barrier layer using atomic deposited Al2O3 gate dielectric. was found to provide higher transconductance both MOSFETs, especially In0.7Ga0.3As. MOSFETs show much lower subthreshold swing than other studied. These exhibit high drive current of 98 mA/mm (L=20 μm), 106 mV/decade maximum effective channel mobility 4402 cm2/V s.

Recently, the manufacturing industry has been striving for sustainability because of environmental degradation and resource depletion caused by it. Remanufacturing considerably saves material is energy efficient, thus, it can represent an important solution to issues. However, uncertainty remanufacturing makes practical management closed-loop supply chains (CLSCs) difficult. To unlock value potential end-of-life (EOL) products, we studied a reuse, remanufacture, recycle (3R) processing...

Employing Chinese customs data and the Peking University Digital Financial Inclusion Index of China, this paper studies impact China's digital finance development on upgrading export at city level further explores heterogeneity across cities mechanisms through which influences upgrading. Benchmark results suggest that inclusive can significantly promote export. The analysis shows with a smaller size, lower wage, higher human capital level, better location advantage experience greater...

We have investigated the effects of gate-first and gate-last process on oxide/InGaAs interface quality using In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) oxides. Sequence source/drain activation anneal in results remarkable electrical physical difference. Applying provides significant frequency dispersion reduction trap density for InGaAs MOSCAPs compared to process. A large amount In–O, Ga–O, As–As bonds was observed surface after while no...

Performance improvement of InGaAs buried channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been achieved by inserting InAs layer and properly designing the inserted position. In0.7Ga0.3As MOSFETs were fabricated analyzed including drive current, transconductance, effective mobility, subthreshold swing. All devices show good off-state saturation property. By in middle (InGaAs/InAs/InGaAs channel), 37% enhancement high field mobility was over with pure channel. Devices...

We have compared the device performance of In0.7Ga0.3As HfO2 gate dielectric tunneling field-effect-transistors (TFETs) using p++/i or p++/n+ junctions. Devices with junctions show 61% and 20% higher current at Vg-Vth=0.5 2 V to ones These TFETs exhibit an on-current 60 μA/μm a minimum subthreshold swing 84 mV/dec. Device characteristics diodes various n+ region doping concentrations been simulated, results indicate concentration plays important role in determining providing well...

In-source fragmentation-based high-resolution mass spectrometry (ISF-HRMS) is a potential analytical technique, which usually used to profile some specific compounds that can generate diagnostic neutral loss (NL) or fragment ion (FI) in source inherently. However, the ISF-HRMS method does not work for those cannot inherently produce NL FI source. In this study, derivatization-based in-source fragmentation-information-dependent acquisition (DISF-IDA) strategy was proposed profiling...