P. Chen

ORCID: 0000-0002-8555-5608
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About
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Research Areas
  • Semantic Web and Ontologies
  • Mathematics, Computing, and Information Processing
  • Spectroscopy and Laser Applications
  • Magnetic properties of thin films
  • Advanced Database Systems and Queries
  • Semiconductor materials and devices
  • Magnetic and transport properties of perovskites and related materials
  • Advanced Chemical Physics Studies
  • Advanced Condensed Matter Physics
  • Advanced MEMS and NEMS Technologies
  • Spectroscopy and Quantum Chemical Studies
  • Quantum and electron transport phenomena
  • Advanced Fiber Optic Sensors
  • Advanced Surface Polishing Techniques
  • Moyamoya disease diagnosis and treatment
  • Metal-Organic Frameworks: Synthesis and Applications
  • Vascular Malformations Diagnosis and Treatment
  • Advanced oxidation water treatment
  • Model-Driven Software Engineering Techniques
  • Electronic and Structural Properties of Oxides
  • Semiconductor Quantum Structures and Devices
  • Copper-based nanomaterials and applications
  • Rare-earth and actinide compounds
  • Acute Ischemic Stroke Management
  • Magnetic Properties and Synthesis of Ferrites

University of California, Berkeley
1979-2021

University of California, San Diego
2004-2017

Institute of Materials Research and Engineering
2006

University of Regensburg
2006

Lawrence Berkeley National Laboratory
2000-2002

Nanjing University
2000-2001

Chongqing Normal University
2000-2001

Collaborative Innovation Center of Advanced Microstructures
2000-2001

Tsinghua University
1997

The experimental results in size dependence of electronic structure and optical band gap show that the nanocrystalline ZnO has two binding states which energies are lower than bulk ZnO. This is associated with number broken bonds individual Zn ion, could be modified by reduction nanoscale. Varying on surface underneath layer might result possible complications ZnO, thus giving rise to different properties rather those relating quantum effects.

10.1063/1.2198821 article EN Applied Physics Letters 2006-04-24

A tunneling-type magnetoresistance (MR) as large 158% is observed at T = 300 K in a polycrystalline Zn0.41Fe2.59O4 sample, which the grains are separated by insulating alpha-Fe2O3 boundaries. The huge room-temperature MR attributed to high spin polarization of Zn(0.41)Fe(2.59)O4 and antiferromagnetic correlations between magnetic domains on both sides boundary. exhibits strong temperature dependence below 100 its magnitude enhanced reach 1280% 4.2 K, may arise from Coulomb blockade effect.

10.1103/physrevlett.87.107202 article EN Physical Review Letters 2001-08-20

We have developed an experimental system to simultaneously measure surface structure, morphology, composition, chemical state, and activity for samples in gas phase environments. This is accomplished by measuring x-ray photoelectron spectroscopy (XPS) grazing incidence scattering pressures as high the multi-Torr regime while also recording mass spectrometry. Scattering patterns reflect near-surface sample structures from nano-scale meso-scale, geometry provides tunable depth sensitivity of...

10.1063/5.0044162 article EN publisher-specific-oa Review of Scientific Instruments 2021-04-01

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface involved, junction exhibits a bias inversion effect. This first experimental signature band structure effects relevant injection experiments.

10.1063/1.2364163 article EN Applied Physics Letters 2006-10-16

The magnetocaloric effect in polycrystalline of Pr1 − xSrxMnO3 (x = 0.3, 0.4, 0.5) was investigated. A large magnetic entropy change (7.1 J/kg K) is discovered Pr0.5Sr0.5MnO3 under a low field 1 T at charge-ordered state transition temperature (161 K). physical mechanism related to drastic magnetization where the field-induced magnetic, electron and structural phase transitions occur (from antiferromagnetic ferromagnetic charge-disordered state).

10.1209/epl/i2000-00478-8 article EN EPL (Europhysics Letters) 2000-12-01

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation . The mechanism for photoinduced ferromagnetism coherence between conduction and valence bands induced the light which leads to an optical exchange interaction. ferromagnetic critical temperature ${T}_{C}$ depends both on properties of material frequency intensity could be above 1K.

10.1103/physrevlett.93.127201 article EN Physical Review Letters 2004-09-14

The authors review a large number of document development systems for both text and graphics from the perspectives source-language direct-manipulation models. They describe task domain discuss pros cons techniques versus programming-language source code procedural declarative schemes. then establish framework analyzing designing multiple-representation systems. central theme is that program constructs visual feedback are complementary to each other hybrid approach would be most desirable.<...

10.1109/2.222114 article EN Computer 1988-01-01

The magnetic-field-induced magnetic and electrical transition from antiferromagnetic nonmetal phase to paramagnetic metal takes place below a temperature of 270 K. Meanwhile, large magnetoresistance ( − 1530%) in NiS was observed under field 4 T at 268 K, which is due the field-induced nonmetal-metal transition.

10.1209/epl/i2001-00149-4 article EN EPL (Europhysics Letters) 2001-02-01

Two approaches to electronic publishing are examined: the conventional batch-oriented programming language approach, and more elaborate direct-manipulation paradigm. The authors indicate which aspects of document preparation conveniently handled under model point out several instances a hybrid approach that takes advantage multiple representations. design fairly sophisticated development environment is discussed as an example multiple-representation system.< <ETX...

10.1109/hicss.1988.11822 article EN 2003-01-06
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