Michael C. Hamilton

ORCID: 0000-0002-8635-6790
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About
Contact & Profiles
Research Areas
  • 3D IC and TSV technologies
  • Electronic Packaging and Soldering Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Thin-Film Transistor Technologies
  • Physics of Superconductivity and Magnetism
  • Radio Frequency Integrated Circuit Design
  • Quantum Computing Algorithms and Architecture
  • Quantum and electron transport phenomena
  • Silicon Carbide Semiconductor Technologies
  • Microwave Engineering and Waveguides
  • ZnO doping and properties
  • Organic Electronics and Photovoltaics
  • Semiconductor Lasers and Optical Devices
  • Photonic and Optical Devices
  • Copper Interconnects and Reliability
  • Thermal properties of materials
  • Quantum Information and Cryptography
  • Neural Networks and Reservoir Computing
  • Superconducting Materials and Applications
  • Advanced Memory and Neural Computing
  • Heat Transfer and Optimization
  • Advanced MEMS and NEMS Technologies
  • Electromagnetic Compatibility and Noise Suppression
  • Carbon Nanotubes in Composites

Auburn University
2016-2025

Google (United States)
2022-2024

Association of Research Libraries
2023

ON Semiconductor (United States)
2015

Oxford Archaeology
2006

University of Michigan–Ann Arbor
2003-2005

Michigan United
2003

Michigan State University
2003

Motorola (United States)
2002

Alpha Environmental (United States)
2002

Abstract Practical quantum computing will require error rates well below those achievable with physical qubits. Quantum correction 1,2 offers a path to algorithmically relevant by encoding logical qubits within many qubits, for which increasing the number of enhances protection against errors. However, introducing more also increases sources, so density errors must be sufficiently low performance improve code size. Here we report measurement qubit scaling across several sizes, and...

10.1038/s41586-022-05434-1 article EN cc-by Nature 2023-02-22

The emergence of rapidly expanding infectious diseases such as coronavirus (COVID-19) demands effective biosensors that can promptly detect and recognize the pathogens. Field-effect transistors based on semiconducting two-dimensional (2D) materials (2D-FETs) have been identified potential candidates for rapid label-free sensing applications. This is because any perturbation atomically thin 2D channels significantly impact their electronic transport properties. Here, we report use FET...

10.1021/acsnano.1c01188 article EN ACS Nano 2021-06-28

Understanding universal aspects of quantum dynamics is an unresolved problem in statistical mechanics. In particular, the spin one-dimensional Heisenberg model were conjectured as to belong Kardar-Parisi-Zhang (KPZ) universality class based on scaling infinite-temperature spin-spin correlation function. a chain 46 superconducting qubits, we studied probability distribution magnetization transferred across chain's center, [Formula: see text]. The first two moments text] show superdiffusive...

10.1126/science.adi7877 article EN Science 2024-04-04

Engineered dissipative reservoirs have the potential to steer many-body quantum systems toward correlated steady states useful for simulation of high-temperature superconductivity or magnetism. Using up 49 superconducting qubits, we prepared low-energy transverse-field Ising model through coupling auxiliary qubits. In one dimension, observed long-range correlations and a ground-state fidelity 0.86 18 qubits at critical point. two dimensions, found mutual information that extends beyond...

10.1126/science.adh9932 article EN Science 2024-03-21

Undesired coupling to the surrounding environment destroys long-range correlations in quantum processors and hinders coherent evolution nominally available computational space. This noise is an outstanding challenge when leveraging computation power of near-term

10.1038/s41586-024-07998-6 article EN cc-by-nc-nd Nature 2024-10-09

10.1038/s41586-024-08449-y article EN cc-by-nc-nd Nature 2024-12-09

We have studied the electrical performance of organic polymer thin-film transistors (OP-TFTs) under steady-state white-light illumination, as well these devices photodetectors. The off-state drain current OP-TFT is significantly increased due to while a smaller relative effect observed on in strong-accumulation regime. illumination effectively decreases threshold voltage device and increases apparent subthreshold swing, field-effect mobility charge carriers channel unchanged. full recovery...

10.1109/ted.2004.829619 article EN IEEE Transactions on Electron Devices 2004-05-25

Low-temperature Ag sintering provides a lead-free die attachment method that is compatible with high-temperature (300 °C) power electronics applications. The reliability of sintered attach for Si and SiC has been studied on both thick film substrates lower current applications direct bond copper (DBC) higher Pressureless low-pressure were evaluated. Sintering low pressure yielded porosity (15-17%) versus pressureless (~30%). Reliability was evaluated thermal aging cycling (-55 °C to + 300...

10.1109/tpel.2016.2631128 article EN IEEE Transactions on Power Electronics 2016-11-22

Systems of correlated particles appear in many fields modern science and represent some the most intractable computational problems nature. The challenge these systems arises when interactions become comparable to other energy scales, which makes state each particle depend on all particles1. lack general solutions for three-body problem acceptable theory strongly electrons shows that our understanding fades number or interaction strength increases. One hallmarks interacting is formation...

10.1038/s41586-022-05348-y article EN cc-by Nature 2022-12-07

We demonstrate a high dynamic range Josephson parametric amplifier (JPA) in which the active nonlinear element is implemented using an array of rf-SQUIDs. The device matched to 50 Ω environment with Klopfenstein-taper impedance transformer and achieves bandwidth 250–300 MHz input saturation powers up −95 dBm at 20 dB gain. A 54-qubit Sycamore processor was used benchmark these devices, providing calibration for readout power, estimation added noise, platform comparison against standard...

10.1063/5.0127375 article EN Applied Physics Letters 2023-01-02

10.1038/s41567-023-02226-w article EN cc-by Nature Physics 2023-10-05

A wide-band real-time spectrum analyzer is examined as a viable integrated optical circuit for processing electronic signals. The includes Luneburg beam expansion lens system, surface elastooptic Bragg spatial modulator, reflectors, Fourier-transform lens, and waveguide coupled photodetector array, all formed on thermally grown SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Si the substrate. distributed-feedback (GaAl)As laser with...

10.1109/jqe.1977.1069325 article EN IEEE Journal of Quantum Electronics 1977-04-01

High-temperature die attach is necessary to fabricate digital and analog thick film modules for 300 °C applications. Sintered Ag a promising material, but typically requires pressure during sintering larger die. Pressureless of microscale paste has been evaluated with Au metallization on Au, Ag, PdAg metalized substrates. With either the or substrate, degradation shear strength rapidly occurred aging at °C. Formation dense layer depletion region near surface was observed aging. This...

10.1109/tcpmt.2015.2455811 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2015-08-12

Channel mobility of >100 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{2}$ </tex-math></inline-formula> V notation="LaTeX">$^{-1}$ s has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence the indicates that Sb, being n-type dopant, reduces electric field while NO anneal...

10.1109/led.2014.2336592 article EN IEEE Electron Device Letters 2014-07-29

Superconducting circuits that operate by propagation of small voltage or current pulses, corresponding to single flux charge quantum, are naturally suited for implementing spiking neuron circuits. Quantum phase-slip junctions (QPSJs) 1-D superconducting nanowires have been identified as exact duals Josephson junctions, based on charge-flux duality in Maxwell’s equations. In this paper, a quantized-charge circuit element, formed using quantum is investigated use high-speed, low-energy By...

10.1063/1.5042421 article EN cc-by Journal of Applied Physics 2018-10-09

Practical quantum computing will require error rates that are well below what is achievable with physical qubits. Quantum correction offers a path to algorithmically-relevant by encoding logical qubits within many qubits, where increasing the number of enhances protection against errors. However, introducing more also increases sources, so density errors must be sufficiently low in order for performance improve code size. Here, we report measurement qubit scaling across multiple sizes, and...

10.48550/arxiv.2207.06431 preprint EN cc-by arXiv (Cornell University) 2022-01-01

Abstract A simple, expedient continuously scalable flow chemistry synthesis of a range 1,4‐dimethylcarbazoles from substituted indoles and 2,5‐hexanedione in the presence K‐10 (montmorillonite clay) is reported. Optimization conditions led to development an in‐house K‐10/sand Omnifit TM catalyst column that at 140 °C 0.4 mL.min −1 afforded &gt;90% conversion selected indole desired 1,4‐carbazole. This equates ca 80 mg.h production rate. The reaction was tolerant electron donating but not...

10.1002/slct.202500249 article EN cc-by-nc-nd ChemistrySelect 2025-03-28

Optical carrier filtering is used with an externally modulated fibre optic link to maintain high dynamic range operation significantly reduced optical power levels. A spur-free of 115 dB Hz2/3 achieved for a frequency 17 GHz received only 1.5 mA. An external filter demonstrate 10 improvement in fixed level.

10.1049/el:19941422 article EN Electronics Letters 1994-12-08
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