A5023749950- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- ZnO doping and properties
- MXene and MAX Phase Materials
- Advanced ceramic materials synthesis
- Magnetic Properties and Applications
- Supercapacitor Materials and Fabrication
- Copper Interconnects and Reliability
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Semiconductor Detectors and Materials
- Advancements in Battery Materials
- Advanced Condensed Matter Physics
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Physics of Superconductivity and Magnetism
- Magnetic and transport properties of perovskites and related materials
- Advanced battery technologies research
University of Memphis
2016-2025
Shanxi Agricultural University
2024
Soochow University
2017-2023
Xiamen University
2023
Xidian University
2019-2023
Changshu Institute of Technology
2021-2022
Beihang University
2021
Suzhou Kowloon Hospital
2021
Wuxi No.2 People's Hospital
2020
Vanderbilt University
2010-2017
A composite perpendicular recording media consisting of magnetically hard and soft regions within each grain is proposed. Application applied field initially causes the magnetization region to rotate and, thus, change angle effective region. This important in enabled by an exchange layer that moderates interaction between two regions. Energy arguments show resulting performance (as measured ratio energy barrier switching field) similar previously proposed tilted media, while avoiding some...
Exchange coupled composite (ECC) media has been shown to possess several major advantages relative conventional perpendicular media, including a reduction in the switching field of approximately factor two for same thermal stability and greater insensitivity easy axis distribution. In this paper, full magnetostatic interactions are included: allows comparison between behavior multigrain thin films that isolated grains as presented earlier. Significant results include hysteresis loops under...
Magnetic–plasmonic core–shell nanomaterials offer a wide range of applications across science, engineering, and biomedical disciplines. However, the ability to synthesize understand magnetic–plasmonic nanoparticles with tunable sizes shapes remains very limited. This work reports experimental computational studies on synthesis properties iron oxide–gold three different (sphere, popcorn, star) controllable (70 250 nm). The were synthesized via seed-mediated growth method in which newly formed...
The path planning of autonomous land vehicle has become a research hotspot in recent years. In this article, we present novel algorithm for an vehicle. According to the characteristics movement towards vehicle, improved A-Star is designed. disadvantages using are that planned by contains many unnecessary turning points and not smooth enough. Autonomous needs adjust its posture at each point, which will greatly waste time also be conducive motion control view these shortcomings, article...
This paper presents first-principles calculations for ultrasmall ZnO one-dimensional nanostructures. The were done on nanowires and single-walled nanotubes with n atoms per periodic unit, where one unit is made up of two layers. show that, small n, a nanotube has lower energy than nanowire. A crossover point near = 38 predicted. Vibrations vibrational entropy competing structures discussed.
Domen has observed that the GaN/ZnO semiconductor alloy serves, in presence of a sacrificial electron scavenger, as photocatalyst for solar water oxidation, producing H+ and O2 at aqueous/semiconductor interface. With suitable cocatalyst, same photoexcitation process also generates H2 from H+. The active sites, mechanisms, reaction intermediates are not known. This paper describes atomistic modeling proposes sequence intermediate steps oxidation pure GaN/water Pure GaN is known to be...
Poor electron mobility at SiC/SiO2 interfaces has long held up the development of SiC-based power devices. The degradation been attributed to defects interface and oxide as in case Si/SiO2 system, but a decade research led only limited improvement. Here we examine theoretical results available experimental evidence show that thermal oxidation generates immobile carbon di-interstitial inside semiconductor substrate they are major cause poor structures.
Gate and drain bias dependences of hot carrier degradation are evaluated for AlGaN/GaN HEMTs fabricated via two different process methods. Both positive negative threshold voltage Vth shifts observed each device type, depending on the mode duration stress, indicating presence significant densities donor-like acceptor-like traps. Worst-case stress transconductance is "ON" state both types. We find that provides a more effective parameter to monitor defect buildup than V <sub...
Responses to 1.8 MeV proton irradiation and 10-keV X-ray under typical bias conditions are investigated for AlGaN/GaN HEMTs fabricated with different types of process technologies. We find that, in contrast previous generations technologies, total ionizing dose effects can be significant these devices. For irradiation, worst-case transconductance degradation GaN-on-SiC substrate devices is ON bias, built on free-standing GaN substrates, the condition semi-ON bias. Low-frequency noise...
The debate about whether the insulating phases of vanadium dioxide ($\mathrm{V}{\mathrm{O}}_{2}$) can be described by band theory or it requires a strong electron correlations remains unresolved even after decades research. Energy-band calculations using hybrid exchange functionals including self-energy corrections account for metallic nature different but have not yet successfully accounted observed magnetic orderings. Strongly correlated theories had limited quantitative success. Here we...
CuInS2 nanocrystals with the wurtzite structure show promise for applications requiring efficient energy transport due to their anisotropic crystal structure. We investigate source of photoluminescence in near-infrared spectral region recently observed from these nanocrystals. Spectroscopic studies both itself and samples alloyed Cd or Zn allow assignment this emission a radiative point defect within nanocrystal Further, by varying organic passivation layer on material, we are able determine...
Ionizing radiation (IR) is one of the major clinical therapies cancer, although it increases epithelial-mesenchymal transition (EMT) non-small cell lung cancer (NSCLC), unexpectedly. The cellular and molecular mechanisms underlying this role are not completely understood.We used NSCLC lines as well tumor specimens from 78 patients with to evaluate p53, Cathepsin L (CTSL) EMT phenotypic changes. Xenograft models was also utilized examine roles mutant p53 (mut-p53) CTSL in regulating...
We present a first-principles study of water adsorption on wurtzite GaN (101̅0) surface. studied the structures and energetics adsorption, calculated energy barrier for dissociation, analyzed water−water interactions. The results are very different from ZnO (101̅0). Water is found to adsorb dissociatively; dissociation negligible. As result substrate strain-mediated interactions hydrogen bonding, dense island agglomerates energetically favored at submonolayer coverage.
We have performed low frequency 1/f noise measurements from 85 K to 450 investigate the energy distribution of defects in GaN/AlGaN high electron mobility transistors fabricated three different processes. The is well described by model P. Dutta and M. Horn, Rev. Mod. Phys. 53, 497 (1981). A peak defect observed at ∼0.2 eV for all device types investigated, which we attribute reconfiguration an oxygen DX-like center AlGaN. An additional &gt;1 devices grown under nitrogen-rich conditions,...
Abstract The nature of the insulator-to-metal phase transition in vanadium dioxide (VO 2 ) is one longest-standing problems condensed-matter physics. Ultrafast spectroscopy has long promised to determine whether primarily driven by electronic or structural degree freedom, but measurements date have been stymied their sensitivity only these components and/or limited temporal resolution. Here we use ultra-broadband few-femtosecond pump-probe resolve and transitions VO at fundamental time...
Vibrational spectra and thermal properties of a two-dimensional triangular lattice, where first-neighbor atoms interact with Lennard-Jones potential, are calculated using both classical molecular dynamics (MD) leading-order anharmonic perturbation theory (PT). The phonon quasiparticle (QPS), obtained nonperturbatively through MD, depend linearly on $T$ at low temperatures in good agreement the QPS by PT. However, noticeable deviations from linear dependence observed high $T$, which...
The irradiation and annealing responses of 4H-SiC MOS devices with nitrided oxides are investigated at varying biases. Radiation-induced hole trapping dominates the radiation response these devices. Switching bias between can lead to significant enhancement degradation in some cases. Positive followed by negative is found be worst-case for combined degradation. After irradiation, reversibility charge observed switched-bias n-substrate capacitors, while enhanced p-substrate capacitors. These...
Detailed studies of the temperature and voltage dependences low-frequency noise 4H-SiC MOSFETs TCAD simulations show that is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters nitrogen dopant atoms at or near SiC/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface.