A5033799779- Advanced Semiconductor Detectors and Materials
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Particle Accelerators and Free-Electron Lasers
- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Plant Physiology and Cultivation Studies
- Laser Material Processing Techniques
- Silicon and Solar Cell Technologies
- Advanced Electron Microscopy Techniques and Applications
- Soybean genetics and cultivation
- Particle accelerators and beam dynamics
- Advanced Fiber Laser Technologies
- Ion-surface interactions and analysis
- Mechanical and Optical Resonators
- Photocathodes and Microchannel Plates
- RFID technology advancements
- Nanowire Synthesis and Applications
- Advanced Frequency and Time Standards
- Gyrotron and Vacuum Electronics Research
- Semiconductor materials and interfaces
- nanoparticles nucleation surface interactions
- Terahertz technology and applications
- Anodic Oxide Films and Nanostructures
- Nonlinear Optical Materials Studies
Center for the Advancement of Natural Discoveries using Light Emission
2016-2023
A. Alikhanyan National Laboratory
2016-2023
Yerevan State University
2016
University of Trento
2013
Institute of Radiophysics and Electronics
2000-2009
National Academy of Sciences of Armenia
2000-2004
The development of new laser-driven electron linear accelerators, providing unique ultrashort pulsed beams (UPEBs) with low repetition rates, opens opportunities for radiotherapy and fronts radiobiological research in general. Considering the growing interest application UPEBs radiation biology medicine, aim this study was to reveal changes immune system response low-energy UPEB whole-body irradiation rodents. Forty male albino Wistar rats were exposed irradiation, after which different...
We experimentally demonstrate solitonic self-spectral compression for noisy super-continuum radiation in a single-mode fiber. The numerical modeling of the process shows prospects noise nonlinear suppression partially coherent pulses.
Features of optical absorption and emission in porous silicon are discussed. The allowance for the finiteness potential well depth when calculating shift edge a quantum wire, probability transition between states conduction valence bands, as radiation lifetime shown to introduce significant amendments into dependences these parameters on size wire silicon.
Using the pulsed laser deposition (PLD) technique CdTe layers were obtained on various substrates from target of compound material, as well by sequential single sources Cd and Te. Electron diffraction analyses have shown that deposited targets InSb, KBr crystallize in usual cubic zinc-blende structure at growth temperature ~150 °C, i.e. significantly lower than other traditional techniques - MBE, MOCVD, PVD. Layers mica with hexagonal wurtzite structure; single-crystalline is observed 300...
To date, the development of coherent ultra-broadband (i.e., with a bandwidth exceeding full octave spectrum) laser sources and associated frequency combs has spanned spectral regions from near-infrared (NIR) to ultra-violet (UV). For extending generation supercontinuum (SC) into mid-infrared (MIR), natural candidate is silicon. SC based on third order effects in silicon nanowires been reported at NIR wavelengths [1], however strong nonlinear two-photon absorption (TPA) free-carrier (FCA)...
Results of investigations thin-film heterojunctions nInSb?nGaAs, pInSb?nCdTe, thin films PbTe, Pb1?xSnxTe as well periodic structures PbTe?Pba?PbTe produced by pulsed laser deposition (PLD) technique and possibilities their application IR photodetectors are discussed. PLD allows one to obtain abrupt interfaces lattice-mismatched nInSb?nGaAs with large number interface states. The sign reversal photoresponse was observed in this structure the wavelength range 3.5?6.5 ?m. at which signal...
A self-propagating high-temperature synthesis technology of manganese - doped bism¬u¬th ferrite has been developed. The best conditions for the preparation inital components mixture and are determined by X-ray phase analysis. technological processes obtaining ceramic samples preparing ohmic contacts have Frequency dependence dielectric permeability loss angle tangent volt-ampere characteristics studied.
This paper reports results from an investigation of the interaction displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation electrons at different energies: 3.5, 14, 25 50 MeV pico-second energy 3.5 MeV. V-V, I-impurity atom V-impurity interactions are analyzed both experimentally modeled using computer simulations. A process divacancy (V2) accumulation dose-dependent linear region is...
The manufacturing technique of a millimetric sizes cantilever from photo-driven azobenzene polymer is described. oscillations under the influence laser radiation are studied. possibility making micron-sized by femtosecond initiated two-photon polymerization shown. Such can become basis for high sensitive sensor, controlled directly light.
The development of the advanced Radio Frequency Timer electrons is described. It based on a helical deflector, which performs circular or elliptical sweeps keV electrons, by means 500 MHz radio frequency field. By converting time distribution incident to hit position circle ellipse, this device achieves extremely precise timing. Streak Cameras, similar principles, routinely operate in ps and sub-ps domain, but have substantial slow readout system. Here, we report device, where sensor,...