A5018101394- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Mass Spectrometry Techniques and Applications
- Analytical chemistry methods development
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and interfaces
- Forensic Fingerprint Detection Methods
- Laser-induced spectroscopy and plasma
- Advanced Materials Characterization Techniques
- Plasma Diagnostics and Applications
- Thin-Film Transistor Technologies
- Nuclear Physics and Applications
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Fusion materials and technologies
- Advanced Surface Polishing Techniques
- X-ray Spectroscopy and Fluorescence Analysis
- Nanopore and Nanochannel Transport Studies
- nanoparticles nucleation surface interactions
- Boron and Carbon Nanomaterials Research
Kyoto University
2015-2025
Hyogo Prefectural Awaji Medical Center
2023-2024
Tokyo Institute of Technology
2011-2023
Panasonic (Japan)
2023
Fudan University
2019-2023
Sasol (Germany)
2021
Japan Science and Technology Agency
2009-2019
Graduate School USA
2017-2018
Osaka Research Institute of Industrial Science and Technology
2017
Osaka University
2017
We demonstrate depth profiling of polymer materials by using large argon (Ar) cluster ion beams. In general, with secondary mass spectrometry (SIMS) presents serious problems in organic materials, because the primary keV atomic beams often damage them and molecular yields decrease increasing incident fluence. Recently, we have found reduced during sputtering gas ions, reported on unique emission materials. Secondary ions from films were measured a linear type time-of-flight (TOF) technique;...
Cluster ion beams have revolutionized the analysis of organic surfaces in time-of-flight secondary mass spectrometry and opened up new capabilities for depth profiling. Much effort has been devoted to understanding improving performance SF(5)(+) C(60)(n+), which are successful many, but not all, materials. Here, we explore potential profiling using novel argon cluster ions, Ar(500)(+) Ar(1000)(+). We present results an delta layer reference sample, consisting ultrathin "delta" layers Irganox...
In this study, we present molecular depth profiling of multilayer structures composed organic semiconductor materials such as tris(8-hydroxyquinoline)aluminum (Alq3) and 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD). Molecular ions produced from Alq3 NPD were measured by linear-type time-of-flight (TOF) mass spectrometry under 5.5 keV Ar70) ion bombardment. The films analyzed etched with large Ar cluster beams, the interfaces between layers clearly distinguished. effect temperature on...
Peptide or protein structural analysis is crucial for the evaluation of biochips and biodevices, therefore an analytical technique with ability to detect identify peptide species directly from surfaces high lateral resolution required. In this report, efficacy ToF-SIMS analyze proteins evaluated. Although physics governing SIMS bombardment process precludes researchers intact larger peptides greater than a few thousand mass unit directly, it possible obtain information on partial structures...
The lattice motion and displacement of atoms in the unit cell vanadium dioxide $({\text{VO}}_{2})$ grown on $c{\text{-Al}}_{2}{\text{O}}_{3}$ were characterized by static time-resolved x-ray diffraction (XRD) measurements. monoclinic-tetragonal phase transition ${\text{VO}}_{2}$ twist observed. XRD measurements performed air using a tabletop high-repetition femtosecond laser. results obtained from suggested that low-temperature monoclinic transformed into high-temperature tetragonal...
The analysis of organic and biological substances by secondary‐ion mass spectrometry (SIMS) has greatly benefited from the use cluster ions as primary bombarding species. Thereby, depth profiling three‐dimensional (3D) imaging such systems became feasible. Large Ar n + may constitute a further improvement in this direction. To explore option, size‐selected with 300 ≤ 2200 (bombarding energies 5.5 11 keV) were used to investigate emission positive secondary four amino acid specimens...
A two-dimensional nanocarbon, graphene, has attracted substantial interest due to its excellent properties. The reduction of graphene oxide (GO) been investigated for the mass production used in practical applications. Different processes produce different properties affecting performance final materials or devices. Therefore, an understanding mechanisms GO is important controlling functional systems. Here, we determined average structure reduced prepared via heating and photoexcitation...
The Ar gas cluster ion beam (Ar-GCIB) technique is advantageous for soft sputtering of large organic molecules. However, in secondary mass spectrometry (SIMS) measurements using Ar-GCIB, the yield typically very low. Matrix-enhanced (ME)-SIMS a that has potential to enhance yield. In previous study on ME-SIMS, aromatic compounds are employed matrix-assisted laser desorption/ionization (MALDI-MS) were used matrix. Although rings involved ionization by absorption energy from probe MALDI-MS,...
Gas cluster ion beam techniques have been developed for atomic and molecular level surface modification processing. Shallow implantation, high yield sputtering, smoothing, low damage cleaning demonstrated experimentally. This article reports recent results concerning treatments that are distinctly different from those produced by conventional monomer irradiation. Possible applications of gas processing to new areas modifications suggested.
Smoothing high-temperature superconductor (HTS) surfaces, especially HTS thin-film is crucial for device processing. In this letter, we describe a method to planarize the surface of YBa2Cu3O7−δ film down smoothness with standard deviation 1 nm or better. The includes first smoothing by ion cluster beam bombardment, followed annealing in oxygen ambient regrow damaged layer. Additional YBCO layers can be grown epitaxially on treated surface, even without removing top layer, which contained...