A5100318358- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- Perovskite Materials and Applications
- Graphene research and applications
- High-Temperature Coating Behaviors
- Conducting polymers and applications
- Semiconductor materials and devices
- Advanced ceramic materials synthesis
- MXene and MAX Phase Materials
- Silicon Carbide Semiconductor Technologies
- Induction Heating and Inverter Technology
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Transition Metal Oxide Nanomaterials
- Thin-Film Transistor Technologies
- Advanced DC-DC Converters
- High Entropy Alloys Studies
- Nanopore and Nanochannel Transport Studies
- Aluminum Alloys Composites Properties
- Electron and X-Ray Spectroscopy Techniques
- Electromagnetic Compatibility and Noise Suppression
- Intermetallics and Advanced Alloy Properties
- Advanced Semiconductor Detectors and Materials
- 3D IC and TSV technologies
Northwestern Polytechnical University
2021-2025
China Resources (China)
2023-2024
Hebei University of Technology
2024
National Engineering Research Center of Electromagnetic Radiation Control Materials
2023
University of Electronic Science and Technology of China
2023
Huazhong University of Science and Technology
2019
ASM International
2018
Beijing Microelectronics Technology Institute
2015
Collaborative Innovation Center of Advanced Microstructures
2014
Nanjing University
2014
Capitalizing on rapid carrier migration characteristics and outstanding photoelectric conversion performance, halide perovskite memristors demonstrate an exceptional resistive switching performance. However, they have consistently faced constraints due to material stability issues. This study systematically employs elemental modulation dimension engineering effectively control with different dimensions A-site elements. Compared pure 3D 2D perovskites, the quasi-2D memristor, specifically...
In the post-Moore era, semifloating gate devices have great potential to be developed into next-generation for their excellent nonvolatile memory and reconfigurable logic. 2D materials been focused due atomically flat surfaces, high carrier mobility, photoelectrical response. The ReSe2 is selected as a channel material its ambipolar characteristic outstanding optoelectronic Here, we fabricated ReSe2/h-BN/Gr multifunctional (MFSFG) devices, which can work bidirectional multistate P–N N–P...
The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This requires perfect understanding the cells performance and reliability relation to deposition processes used their manufacturing. In this paper, impact precursor chemistries process conditions on HfO2 based memristive studied. An extensive characterization 1T1R cells, comparison cell-to-cell variability, study performed. cells' behaviors during...
Abstract New multifunctional artificial synaptic devices, which are capable of sensing various external information in addition to electrical stimuli and processing multiple signals parallel the same way biological synapses do, urgent need. Recently, several optical memristors proposed simulate photosynaptic plasticity for neuromorphic computing. Here, a light‐responsive memristor is described based on Cs 0.05 (FA x MA 1− ) 0.95 PbI y Br 3− (CsFAMAPbIBr), kind organometal trihalide...
With the advent of post-Moore era, development memory devices based on bulk materials gradually entered bottleneck period. Two-dimensional (2D) have received much attention due to their excellent optoelectronic and mechanical properties. Also, floating-gate 2D van der Waals heterostructures drawn widespread in virtue great potential for nonvolatile memory. In this paper, a device MoS2/BN/graphene heterostructure was fabricated its electrical storage performance synaptic function were...
Abstract The floating gate devices, as a kind of nonvolatile memory, obtain great application potential in logic‐in‐memory chips. 2D materials have been greatly studied due to atomically flat surfaces, higher carrier mobility, and excellent photoelectrical response. ReS 2 flake is an candidate for channel thickness‐independent direct bandgap outstanding optoelectronic In this paper, the devices are prepared with /h‐BN/Gr heterojunction. It obtains superior electrical memory characteristics,...
Recently, two-dimensional transition-metal dichalcogenides have become the focus of extensive research activities due to their remarkable physical properties such as high carrier mobility, tunable band gap, optical response, and facile fabrication heterostructures. In this study, we report on a type II van der Waals (vdW) heterojunction made tungsten diselenide (WSe2) rhenium disulfide (ReS2) with integrated vdW electrodes by using an all-dry transfer technique. The electrical rectified...
With the development of semiconductor technology, size traditional metal oxide field effect transistor devices continues to decrease, but it cannot meet requirements high performance and low power consumption. Low tunneling (TFET) has gradually become focus researchers. This paper proposes a novel T-shaped gate TFET based on silicon with negative capacitance (NC-TGTFET). On basis TGTFET, ferroelectric material (HZO) is used as dielectric. The simulation results show that, compared opening...
Compared to traditional bulk materials, two-dimensional transition metal dichalcogenides (2D TMDCs) hold the potential in low power logic, photoelectric, and nonvolatile memory devices due a tunable band structure, pure heterojunction interface, photodetection for wide spectral range. ReS2 is chosen as channel material our work because it possesses excellent photoresponsivity. In addition, BN dielectric inserted between SiO2 gate dielectric. The interface at BN/ReS2 enhances electric...
Organic-inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, intermediate layer of memristor was prepared using yttrium oxide (Y2O3)/OHP stacking structure this manuscript. The potential barrier between Y2O3and perovskite is relatively high (ΔEC = 2.13 eV) which leads comparatively low current memristor,...
Abstract 2D photodetectors operating in photovoltaic mode exhibit a trade‐off between response speed and photoresponsivity. This work presents phototransistor based on SnS 2 /ReSe heterojunction. Under negative bias, the energy band spike at heterojunction interface impedes carrier drifting so that dark current is as low 10 −13 A. The tunneling under positive bias significantly reduces transmission time of photogenerated carriers, which enhances responsivity specific detectivity to 32.77 A W...
SiOx films (x=1.3) are deposited on the silicon substrates by electron beam evaporation. The resistive switching behaviors from device consisting of indium tin oxide (ITO)/SiOx/Si/Al with annealed layer as investigated. It is found that on/off ratio increases annealing temperature rising. maximum reaches 109. analyses X-ray photoelectron spectrum and paramagnetic resonance reveal dangling bonds in different valence states can be formed at temperatures, which main source conducting filament...
We investigated The silicon dianglin bonds (DBs) features and resistance switching behavior of suboxides (SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ) sandwiched between Pt electrodes to study the x dependent operation characteristics nature intrinsic conducting filaments in SiO based random access memories (ReRAM). When x<;0.80, forming/set operations need a current compliance reset voltage V...