A5069512933- Surface and Thin Film Phenomena
- Electron and X-Ray Spectroscopy Techniques
- Advanced Electron Microscopy Techniques and Applications
- Force Microscopy Techniques and Applications
- Advanced Materials Characterization Techniques
- Semiconductor materials and interfaces
- nanoparticles nucleation surface interactions
- Advanced Chemical Physics Studies
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Chemical and Physical Properties of Materials
- Advanced X-ray Imaging Techniques
- Advancements in Battery Materials
- Semiconductor Quantum Structures and Devices
- Optical Coatings and Gratings
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Magnetic properties of thin films
- Advanced Battery Technologies Research
- Molecular Junctions and Nanostructures
- Electronic and Structural Properties of Oxides
- X-ray Spectroscopy and Fluorescence Analysis
- Thin-Film Transistor Technologies
- Advancements in Photolithography Techniques
- Catalytic Processes in Materials Science
Tokyo Institute of Technology
2003-2015
Japan Science and Technology Agency
2007-2015
Judd Systems Technologies (United States)
2013
Tokyo University of Science
2013
JEOL (Japan)
2013
Osaka University
2012
Centre for Research in Engineering Surface Technology
2008
Center for Responsible Travel
2008
Centre de Recherche en Économie et Statistique
2008
Kwansei Gakuin University
1987
Structural analysis of the surface reconstructions investigated by ultrahigh vacuum (UHV) transmission electron microscopy (TEM) and diffraction (TED) is shown. By TED intensity a new structural model Si(111)-7×7 derived. The basically consists 12 adatoms arranged locally in 2×2 structure, nine dimers on sides triangular subunits 7×7 unit cell stacking fault layer. UHV–HREM Si (111)-7×7 commented.
A spherical aberration-corrected electron microscope has been developed recently, which is equipped with a 300-kV cold field emission gun and an objective lens of small chromatic aberration coefficient. dumbbell image 47 pm spacing, corresponding to pair atomic columns germanium aligned along the [114] direction, resolved in high-angle annular dark (HAADF) scanning transmission microscopy (STEM) 0.4-eV energy spread beam. The observed was compared simulated obtained by dynamical calculation.
We visualized lithium atom columns in LiV2O4 crystals by combining scanning transmission electron microscopy with annular bright field (ABF) imaging using a spherical aberration-corrected microscope (R005) viewed from the [110] direction. The incident beam was coherent convergent angle of 30 mrad (semi-angle), and detector collected scattered electrons over 20–30 (semi-angle). ABF image showed dark dots corresponding to lithium, vanadium oxygen columns.
The dynamic processes and structure of an Au cluster growing from a few to several tens atoms have been revealed using new high-resolution electron microscope designed specially for in situ surface study at atomic level. microscopy has also clarified details the reconstructed Au(100)5×1 (110)2×1 surfaces formed on particles profile images. In reflection mode, 7×7 Si(111) seen with 2.3 nm superlattice fringes. observations transmission modes are thus demonstrated be useful studies behavior surfaces.
The performance of a newly developed high-resolution 300 kV microscope equipped with spherical aberration corrector for probe-forming systems is reported. This gave the highest resolution distance between atomic columns, as determined by high-angle annular dark field imaging method using GaN[211] crystalline specimen, where neighboring columns Ga was 63 pm.
A dimer adatom stacking-fault model for the Si(111)-7\ifmmode\times\else\texttimes\fi{}7 reconstructed surface structure is described as a network of walls and domains. The wall consists chain dimers domain clusters adatoms arranged locally in 2\ifmmode\times\else\texttimes\fi{}2 on ``1\ifmmode\times\else\texttimes\fi{}1'' lattice. It shown that with proper configuration (dimer chain), new Ge(111)-2\ifmmode\times\else\texttimes\fi{}8 can be made. structure, which has four three unit cell...
Changes in the step structures on clean (100) silicon surfaces during annealing were observed by situ ultra high vacuum reflection electron microscopy. After quenching from 1200°C, at about 800°C almost entire surface was covered with periodic arrays of 2×1 and 1×2 reconstructed domains bounded monolayer steps. One type domain, dimers parallel to average tilt axis [011̄], grew over other above 900°C. The terrace size became as large a few microns. However, small number remained stable 1000°C...
Clean Si(001) surfaces with the 2×1 reconstruction are investigated by transmission electron diffraction (TED) and microscopy (TEM). TED patterns from (1̄1 l ) vicinal of off-angles 2-5° indicate formation a single oriented structure. The superlattice reflection spots in first that surface has bilayer-high steps dimers parallel to steps. Secondly, unit cell displaces across step + [110]/2 ( - [110]/2) on were mean direction rotated positively (negatively) [110]. Up about 20 degrees rotation,...
Reconstructed surface structure of Si(111)-5×5-Ge and a 7×7 the Ge(111) deposited on Si(111) are confirmed to have atomic structures similar dimer adatom stacking-fault (DAS) Si(111)-7×7 surface. A model, dimer-chain which describes these DAS 2×8 having arrangement is presented. Stability with n×n (odd) 2×m (even) periodicities discussed using Keating method. The result suggests structural change due softening bonding.
As a new microscopic method to reveal lithium ion behavior in batteries, we demonstrated that atoms the diffusion channel of spinel structure (LiV2O4 crystal) were visualized and their number was countable one-by-one by using annular bright field imaging conjunction with spherical aberration corrected electron microscope: column intensity varied step single atom correlation thickness change LiV2O4 crystal, accordance theoretical image simulations.
Annular dark-field scanning transmission electron microscope (ADF-STEM) images of an Si (001) crystal were obtained by using aberration-corrected microscope, at 30-mrad convergent probe and cold field-emission gun 300 kV. The intensity ADF-STEM images, that is, the number scattered electrons relative to incident electrons, for specimen thickness from 10 50 nm was compared quantitatively with absorptive multi-slice simulation. column background intensities analyzed column-by-column...