A5074652168- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Advanced Optical Network Technologies
- Semiconductor Quantum Structures and Devices
- Molecular Junctions and Nanostructures
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Advancements in PLL and VCO Technologies
- Interconnection Networks and Systems
- Cloud Computing and Resource Management
- Advanced Fiber Laser Technologies
- Advanced Optical Sensing Technologies
- Nanofabrication and Lithography Techniques
- Neural Networks and Reservoir Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Quantum Computing Algorithms and Architecture
- Fluid Dynamics and Turbulent Flows
- Scientific Computing and Data Management
- Engineering and Test Systems
- Microwave and Dielectric Measurement Techniques
- VLSI and Analog Circuit Testing
IBM (United States)
2010-2023
IBM Research - Thomas J. Watson Research Center
2014-2023
Institute of Electrical and Electronics Engineers
2019
Queen's University
2014
University of California, Berkeley
1991-2002
Optical fiber links have become ubiquitous for at the metropolitan and wide area distance scales, common alternatives to electrical in local networks cluster networks. As optical technology improves link frequencies continue increase, will be increasingly considered shorter, higher-bandwidth such as I/O, memory, system bus links. For these closer processors, issues packaging, power dissipation, components cost assume increasing importance along with bandwidth distance. Also, move steadily we...
We report error free (BER <; 10-12) operation of a directly non-return-to-zero modulated 850-nm vertical cavity surface-emitting laser (VCSEL) link operating to 71 Gb/s. This is the highest modulation rate for any type. The optical consists 130-nm BiCMOS driver IC with two-tap feed-forward equalization, wide bandwidth VCSEL, surface illuminated GaAs PIN photodiode, and receiver IC.
In the "Terabus" optical interconnect program, data bus technologies are developed that will support terabit/second chip-to-chip transfers over organic cards within high-performance servers, switch routers, and other intensive computing systems. A complete technology set is for this purpose, based on a chip-like optoelectronic packaging structure (Optochip), assembled directly onto an card (Optocard). Vertical-cavity surface emitting laser (VCSEL) photodiode arrays (4times12) flip-chip...
We demonstrate 4 × and 8 switch fabrics in multistage topologies based on 2 Mach–Zehnder interferometer switching elements. These are integrated onto a single chip with digital CMOS logic, device drivers, thermo-optic phase tuners, electro-optic modulators using IBM's 90 nm silicon nanophotonics technology. show that the various switch-and-driver systems capable of delivering nanosecond-scale reconfiguration times, low crosstalk, compact footprints, power dissipations, broad spectral...
We have developed parallel optical interconnect technologies designed to support terabit/s-class chip-to-chip data transfer through polymer waveguides integrated in printed circuit boards (PCBs). The board-level links represent a highly packaging approach based on novel module, or Optomodule, with 16 transmitter and receiver channels. Optomodules Tx+16 Rx channels been assembled fully characterized, transmitters operating at rates up 20 Gb/s for 2 <sup...
We present the design, fabrication, and measurement results of low-insertion-loss low-crosstalk broadband 2 × Mach-Zehnder switches for nanosecond-scale optical data routing applications. propose a simulation framework to calculate spectral characteristics use it design two switches: one based on directional couplers, other using two-section couplers broader bandwidth. show that driving switch in push-pull manner enables reduce insertion loss crosstalk at expense achieve good correlation...
We report on the properties of an 850 nm vertical cavity surface-emitting laser (VCSEL) transmitter running at 50 Gb/s with NRZ modulation from 30 °C to 90 °C. This is highest operating temperature for a VCSEL link any wavelength. achievement made possible by combination high speed design and driver receiver circuits that incorporate equalization. Without equalization, attained bit error ratio <;1E-12 57
A 64-Gb/s high-sensitivity non-return to zero receiver (RX) data-path is demonstrated in the 14-nm-bulk FinFET CMOS technology. To achieve high sensitivity, RX incorporates a transimpedance amplifier whose gain and bandwidth are co-optimized with 1-tap decision feedback equalization (DFE). The DFE, which operates at quarter-rate, features look-ahead speculation relax DFE timing 4 unitinterval. analog front end includes transadmittance inductorless variable amplifier, resulting low power...
A parallel, 32-channel, high density (140 /spl mu/m pitch), 500 Mb/s NRZ, point-to-point, optical data link has been fabricated using existing GaAs IC, silicon bench (SiOB), and multichip module (MCM-D) technologies. The main components of the transmitter receiver modules are a GaAs-based vertical cavity surface emitting laser (VCSEL) array at 850 mn with its IC driver chip an integrated metal-semiconductor-metal (MSM) (photodetector signal processing circuits) nm. package uses modified 164...
We report the optical interconnect for POWER7-IH systems, which provides high-BW, low-latency connectivity 100,000s of high-performance CPU cores by leveraging dense transceiver and connector technologies to construct chip module IOs. ©2010 Optical Society America
We report a directly modulated 850nm VCSEL-based optical link operating at 56.1Gb/s (BER < 1E-12). This is the highest modulation rate for of any wavelength. An open eye obtained 60Gb/s.
Increasing performance in supercomputers requires a concomitant increase intra-system interconnect bandwidth. We review the status and prospects of technologies required to build low power, high density board chip level interconnects.
We report here on the design, fabrication and characterization of 48-channel parallel optical transceivers demonstrating terabit/sec data transfer rate. The 0.48 Tb/s transmit plus receive throughput was achieved using a second-generation single-chip holey CMOS transceiver IC. In addition to 24 receiver (RX) laser diode driver circuits, 5.2 mm × 5.8 single chip incorporates 48 through-substrate vias (holes), one for each transmitter (TX) RX channel. A complete Optochip is formed following...
A full multicore fiber optic link is demonstrated, transmitting greater than 100 Gb/s through a single strand of multimode for the first time. The fiber, which consists seven graded-index cores, used to transmit up 120 over m using custom multicore-fiber interfacing transmitter and receiver. 2-D arrays vertical-cavity surface-emitting lasers (VCSELs) vertically illuminated photodiodes (PDs) are fabricated with geometry corresponding outer six cores seven-core arranged in hexagonal pattern....
We present the design and characterization of a novel electro-optic silicon photonic 2×2 nested Mach-Zehnder switch monolithically integrated with CMOS driver interface logic. The device uses variable optical attenuator in order to balance power inside interferometer leading ultralow crosstalk performance. measured as low -34.5 dB, while achieving ∼2 dB insertion loss 4 ns transient response.
We design, fabricate and demonstrate 850 nm VCSEL PD arrays which operate at 25 Gb/s per channel, up to 600 with 24 channels, for low-power parallel optical module applications. also report a complete back-to-back link.
We present simulation and experimental results on a silicon photonic strictly nonblocking 4 × electrooptic Mach- Zehnder-based switch fabric. propose framework based the transfer matrix approach that enables calculating transmission spectra of any type multistage interconnect network. The model is used to analyze spectral characteristics also show fabric designed fabricated in IBM's 90-nm photonics-enabled CMOS process. monolithically integrates logic, drivers, all photonics. fully...
The performance of a receiver based on CMOS amplifier circuit designed with 90nm ground rules wire-bonded to waveguide germanium photodetector is characterized at data rates up 40Gbps. Both chips were fabricated through the IBM Silicon Integrated Nanophotonics process specialty photonics-enabled SOI wafers. At rate 28Gbps which relevant new generation optical interconnects, sensitivity -7.3dBm average power demonstrated 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening...
This paper presents a 32 Gb/s non-return-to-zero optical link using 850-nm vertical-cavity surface-emitting laser-based multi-mode optics with 14-nm bulk FinFET CMOS circuits. The target application is the integration of on to first-level package, connecting high-speed I/O directly an advanced host chip (e.g., processor and switch) increase package bandwidth density lower overall system power cost. designed for maximum margin tolerate high losses created by low-cost packaging. transmitter...
We measure spatial hole burning in weakly index guided vertical-cavity surface-emitting laser diodes (VCSELs) by spatially and spectrally resolving the spontaneous emission near field above threshold show that holes produce a significant lensing effect. demonstrate experimentally, with simple model, VCSELs, self-focusing causes fundamental mode width to decrease increasing output power, exacerbating problem inducing transition multimode operation at relatively low powers.
24-channel 850-nm VCSEL and PD arrays are flip-chip soldered to 90-nm CMOS "holey" 48-channel 12.5-Gb/s/channel transceiver chip, featuring through-substrate holes for optical I/O. Aggregate 300-Gb/s bi-drectional data rate is highest reported single-chip modules.
We report here on the design, fabrication, and high-speed performance of a parallel optical transceiver based single CMOS amplifier chip incorporating 16 transmitter receiver channels. The interfaces to are provided by 16-channel photodiode (PD) VCSEL arrays that directly flip-chip soldered IC. substrate emitting/illuminated VCSEL/PD operate at 985 nm include integrated lenses. complete transceivers low-cost, low-profile, highly assemblies compatible with conventional packaging technology...
We describe Mach-Zehnder-based silicon photonic switch fabrics monolithically integrated with a digital CMOS logic and driver circuitry. review 2 × Mach-Zehnder switches, nested strictly nonblocking 4 nanosecond-scale, low-power, low-crosstalk, low-insertion-loss performances. also demonstrate fast dynamic reconfigurability on an 8 butterfly fabric. Technical challenges future research directions of scaled switching systems are discussed.
Two 20 Gb/s optical transmitters are presented. They a part of 4/spl times/12 array intended for backplane data links. The drivers fabricated in 0.13 /spl mu/m CMOS and include pre-emphasis regulated output impedance. When coupled to 990 nm VCSELs, they provide modulation amplitude 0 dBm consume 70 mW 120 mW.