A5101546141- Semiconductor materials and devices
- Electromagnetic wave absorption materials
- Semiconductor Quantum Structures and Devices
- Advanced Antenna and Metasurface Technologies
- Silicon Carbide Semiconductor Technologies
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Metamaterials and Metasurfaces Applications
- Metal and Thin Film Mechanics
- Silicon and Solar Cell Technologies
- Biochemical and Structural Characterization
- Microbial Metabolism and Applications
- Advanced Optical Sensing Technologies
- Enzyme Production and Characterization
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Fluorescence Microscopy Techniques
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
- Advanced Fiber Laser Technologies
- Silicon Nanostructures and Photoluminescence
- Enzyme Structure and Function
- ZnO doping and properties
- Protein Structure and Dynamics
- Inorganic Fluorides and Related Compounds
Chinese Academy of Sciences
1999-2023
University of Science and Technology of China
2018-2022
Institute of Semiconductors
1990-2003
A porous Ti3AlC2/SiC gradient composite with highly interconnective pores and variation of the Ti3AlC2 content was prepared by template-replication method. Electromagnetic wave absorption shielding performances as-prepared were investigated waveguide method in range X-band. It reveals that complex permittivity EMW properties increased increasing sintering temperature from 800 to 1000 °C. Meanwhile, rather than SER, SEA contributed effectiveness effectively. The sintered at °C exhibited...
A broadband radar absorbing combinatorial foam metamaterial (CFMM) was developed and evaluated via simulation experimentation. CFMM constructed using silicon carbide/carbon (SiC/C) material, a FR4 dielectric metal pattern. The SiC/C material prepared template. pattern consists of square ring with four split gaps in the middle ring. As result this new design, influence design geometrical dimensions on absorption performance were discussed, as can be adjusted by changing geometric parameters...
Indium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation point can be explained terms complete occupation at indium vacancy. is enhanced interstitial that caused kick out In and substitution site diffusion process. Through these Fe-diffusion results, nature better understood.
A new model of ‘‘new donors’’ is presented, based on electrical, infrared measurements, transmission electron microscopy, and high-resolution microscopy observations Czochralski-grown silicon single crystals containing donors.’’ In this model, the electrical activity originates from uncoordinated Si dangling bonds small dislocation loops resulting oxygen precipitation. comparison with other models, present can better explain experimental results heat treatment wafers.
Positron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience iron phosphide (IP) ambience, respectively. The ambiences convert as-grown n-type into two types semi-insulating (SI) states. positron average lifetimes InP, PP SI-InP, IP SI-InP are found be 246, 251, 243 ps, respectively, which all longer than...
It is well known that the density of minority carriers in a germanium crystal can be altered near rectifying contact. The purpose this paper to describe procedure for preparing reproducible and dependable injecting extracting contact, order obtain good exponential decay or rise curve determining their lifetimes by Many bridge method. found ohmic contacts single must considered together.
Deep levels in semi-insulating (SI) InP obtained by annealing iron phosphide (IP) ambiance have been characterized optical transient current spectroscopy (OTCS). Compared with the OTCS result of SI prepared pure phosphorus (PP) ambiance, IP presents only two traps activation energies 0.20 and 0.63 eV, respectively. The results suggest that diffusion Fe-atoms suppresses formation a few defects InP. nature deep PP has discussed on basis these results. relation between material property those...
In this paper, the effects of thickness multiplication region (Tm), sheet charge density control layer (Dc) and guard ring design to a separate absorption, grading, charge, InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm Dc designed for SPAD. Implanted is revealed be easier better suppress junction edge electric field compared with floating ring.
In this paper, we theoretically study the performance of a separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP single photon avalanche diode (SPAD) using two-dimensional drift-diffusion model based on our experimental results. The electric field, dark current breakdown voltage are calculated for SPAD different thickness charge layers, to optimize preformance. Moreover, find that number InGaAsP grading layers could be decreased which is operated in Geiger mode, keep...
The electrical properties and structural defects of Te-doped GaAs grown in space have been investigated by using various techniques. experimental results confirm that the microgravity conditions offer some advantages for melt growth III-V compound semiconductor materials; improvements homogeneity perfection as well purity single crystal are expected.