A wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed. The input-impedance matching was achieved by taking advantage of resistive shunt-shunt feedback in conjunction with a parallel LC load to make input network equivalent two RLC-branches, i.e., second-order bandpass filter. Besides, both inductive series- and shunt-peaking techniques are used for bandwidth extension. Theoretical analysis shows that frequency response noise figure (NF) can be...

A highly adaptive multi-sensor SoC comprising four integrated on-chip sensors and a smart wireless acquisition system is realized in standard CMOS process for the first time. To intelligently different types (C, R, I, V) of sensor signals, linear (R-square 0.999) reconfigurable readout proposed based on switched-capacitor circuit technology. In addition, dual-input energy harvesting interface with conversion efficiency 73% also to pick up light RF power, which potentiates long-term use...

Design principles of CMOS low-noise amplifiers (LNAs) for simultaneous input impedance and noise matching by tailoring device size R/sub opt/=50 /spl Omega/ are introduced. It is found that opt/ close to 50 can be obtained using small devices (110 mu/m) currents (5 mA). Based on the proposed approach, LNAs with on-chip output networks thin (/spl sim/20 normal (750 substrates implemented. figure (NF) (3.0 dB) LNA at 5.2 GHz 10-mW power consumption substrate reduced 2.17 dB after thinned down...

This paper presents a wideband low-noise amplifier (LNA) based on the cascode configuration with resistive feedback. Wideband input-impedance matching was achieved using shunt-shunt feedback resistor in conjunction preceding π -match network, while gain response obtained post-cascode inductor (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</sub> ), which inserted between output of cascoding transistor and input network to enhance suppress...

With the help of micro-electromechanical systems (MEMS) and complementary metal-oxide-semiconductor (CMOS) technology, a portable micro gas chromatography (μGC) system for lung cancer associated volatile organic compounds (VOCs) detection is realized first time. The composed an MEMS preconcentrator, separation column, CMOS system-on-chip (SoC). preconcentrator provides concentration ratio 2170. column can separate more than seven types VOCs. SoC fabricated by TSMC 0.35 μm 2P4M process...

Selective removal of the silicon underneath inductors in RF integrated circuits based on inductively coupled plasma (ICP) deep trench technology is demonstrated by a complementary metal-oxide-semiconductor (CMOS) 5-GHz low-noise amplifier (LNA) and 4-GHz voltage-controlled oscillator (VCO). Design principles multistandard LNA with flat low noise figures (NFs) within specific frequency range are also presented. A 2-dB increase peak gain (from 21 to 23 dB) 0.5-dB 2.28 1.78 decrease minimum NF...

This paper reports the design and analysis of 21-29-GHz CMOS low-noise amplifier (LNA), balun mixer in a standard 0.18-μm process for ultra-wideband automotive radar systems. To verify proposed LNA, balun, architectures, simplified receiver front-end comprising an double-balanced Gilbert-cell-based mixer, two Marchand baluns was implemented. The wideband can convert single RF local oscillator (LO) signals to nearly perfect differential over band. performance is improved with current-bleeding...

A novel theory based on dual-feedback circuit methodology is proposed to explain the kink phenomenon of transistor scattering parameter S/sub 22/. Our results show that output impedance all transistors intrinsically shows a series RC at low frequencies and parallel high frequencies. It this inherent ambivalent characteristic causes appearance 22/ in Smith chart. was found an increase transconductance enhances effect while drain-to-source (or collector-to-emitter) capacitance obscures it....

A wideband low-noise amplifier (LNA) with shunt resistive-feedback and series inductive-peaking is proposed for input matching, broadband power gain flat noise figure (NF) response. The LNA implemented in 0.18-mum CMOS technology. Measured results show that greater than 10 dB return loss below -10 from 2 to 11.5 GHz. IIP3 about +3 dBm, the NF ranges 3.1 4.1 over band of interest. An excellent agreement between simulated measured found attributed less number passive components needed this...

In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and inductive shunt-shunt feedback technique bandwidth extension pole-zero cancellation. The LNA dissipates 25.8-mW power achieves S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> below -10 dB frequencies from 3 to 14 GHz (except...

A low-voltage (0.5 V) and low-power (4.535 mW) monolithic biomedical system-on-a-chip (SOC) consisting of a receiver, transmitter, microcontrol unit, an analog-to-digital converter (ADC), implemented in 0.18-μm CMOS technology for intrabody communication is first reported. The SOC can take command through human body activate (or turn on) the ADC transmitter inside SOC. Then, signal converted to digital format transmitted RF gateway body. With this transmission methodology proposed circuit,...

A Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor (HBT) grown on a

The first circuit implementation of quantization noise suppression technique for DeltaSigma fractional- N frequency synthesizers using reduced step size dividers is presented in this paper. This based on a 1/1.5 divider cell which can reduce the to 0.5 and thus suppresses by 6 dB. synthesizer intended WLAN 802.11a/WiMAX 802.16e transceiver. chip implemented 0.18-mum CMOS process die 1.23 mm times 0.83 mm. power consumption 47.8 mW. in-band phase -100 dBc/Hz at 10 kHz offset out-of-band -124...

A quick wireless label-free detection of disease-related C-reactive proteins (CRPs) using a 200-microm-long microelectromechanical systems (MEMS) microcantilever housed in 7 x mm(2) reaction chamber with safe reusable feature is reported. The assay time ranges from about 30 min to 3 h, depending on accuracy. deflection the due specific CRP-antiCRP binding detected position-sensitive detector. converted bio-signal transmitted by custom designed amplitude-shift-keying (ASK) transceiver IC...

A low-power, high-gain (HG), and low-noise (LN) CMOS distributed amplifier (DA) using cascaded gain cell, formed by an inductively parallel-peaking cascode-stage with a low- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Q</i> RLC load series-peaking common-source stage, is proposed. Flat high xmlns:xlink="http://www.w3.org/1999/xlink">S</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> flat low noise figure (NF) are achieved...

As developments of modern societies, an on-field and personalized diagnosis has become important for disease prevention proper treatment. To address this need, in work, a polysilicon nanowire (poly-Si NW) based biosensor system-on-chip (bio-SSoC) is designed fabricated by 0.35 μm 2-Poly-4-Metal (2P4M) complementary metal-oxide-semiconductor (CMOS) process provided commercialized semiconductor foundry. Because the advantages CMOS (SoC) technologies, poly-Si NW integrated with chopper...

This paper presents a highly-integrated DNA detection SoC, where several kinds of cantilever sensors, readout circuit, an MCU, voltage regulators, and wireless transceiver, are integrated monolithically in 0.35 μm CMOS Bio-MEMS process. The cantilever-based biosensors with embedded piezoresistors aim to transduce hybridization into resistance variation without cumbersome labeling To improve sensitivity for low concentration use, oscillator-based self-calibrated circuit high precision is...

A 0.45-V low-power 0.18 μm CMOS OOK/FSK RF receiver for implantable medical applications is proposed. The utilizes a wake-up mechanism to adjust its power consumption automatically by reading the amplitude of input wireless modulated signal directly. No additional commands are required. Such normally-off and instanton scheme reduces this significantly. 129 μW in sleep mode 352 mode. Other techniques, such as third-orderharmonic cancellation, subharmonic mixing, forward body biasing also...

This paper presents the implementation of a batteryless CMOS SoC with low voltage pulsed radio-frequency (PRF) stimulation. implantable uses 402 MHz command signals following medical implanted communication system (MICS) standard and frequency (1 MHz) for RF power transmission. A body floating type rectifier achieves 84% conversion ratio. bi-phasic pulse train 1.4 V 500 kHz is delivered by PRF driver circuit. The parameters include duration, repetition rate, which are controllable via...

This paper presents the development of a passive inertial switch using multiwall carbon nanotube (MWCNT)-hydrogel composite integrated with an inductor/capacitor ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> - xmlns:xlink="http://www.w3.org/1999/xlink">C</i> ) resonator. The device consists polydimethylsiloxane (PDMS) microfluidic chip containing MWCNT-hydrogel and water droplet glass substrate capacitor plate inductor coil. When...

Abstract Microfluidic pump is an essential component in lab-on-chip applications. It of importance to develop active microfluidic with low-power and low-cost characteristics for portable miniaturized diagnostic systems. Taking advantages CMOS technologies, this work, we report a based on travelling-wave electroosmosis (TWEO). Utilizing integrated driving circuit, monolithic can be operated at 1.5 V voltage power consumption 1.74 mW. The circuit consist resistor-capacitor (RC) oscillator,...