X. Zeng

ORCID: 0000-0003-3362-4058
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About
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Research Areas
  • Advanced Fiber Laser Technologies
  • Semiconductor Quantum Structures and Devices
  • Quantum optics and atomic interactions
  • Atomic and Subatomic Physics Research
  • Semiconductor Lasers and Optical Devices
  • Laser-Matter Interactions and Applications
  • Spectroscopy and Laser Applications
  • Advanced Photocatalysis Techniques
  • Cold Atom Physics and Bose-Einstein Condensates
  • GaN-based semiconductor devices and materials
  • CO2 Reduction Techniques and Catalysts
  • Gas Sensing Nanomaterials and Sensors
  • Solid State Laser Technologies
  • Molecular Sensors and Ion Detection
  • Corneal surgery and disorders
  • Photonic and Optical Devices
  • Laser-induced spectroscopy and plasma
  • Advanced Sensor and Energy Harvesting Materials
  • Analytical Chemistry and Sensors
  • Strong Light-Matter Interactions
  • Metal complexes synthesis and properties
  • Atmospheric aerosols and clouds
  • Copper-based nanomaterials and applications
  • Intraocular Surgery and Lenses
  • MXene and MAX Phase Materials

Key Laboratory of Chemistry for Natural Products of Guizhou Province and Chinese Academy of Sciences
2024

Beijing Technology and Business University
2022-2023

Nankai University
2021

Fuzhou University
2020

Swiss Center for Electronics and Microtechnology (Switzerland)
2012-2015

École Polytechnique Fédérale de Lausanne
2012-2013

Fraunhofer Institute for Applied Solid State Physics
2012

China Academy of Engineering Physics
2003

Iodine, primarily in the form of iodide (I−), is bioavailable for thyroid human body. Both deficiency and excess intake can lead to serious health issues, such as disease. Selecting ions among anions has been a significant challenge decades due interference from other anions. In this study, we designed synthesized new pincer-type acridine–triazole fluorescent probe (probe 1) with an acridine ring spacer triazole linking arm attached two naphthol groups. This selectively recognize mixed...

10.3390/molecules29061355 article EN cc-by Molecules 2024-03-19

We used a hydrothermal method to prepare In2S3 in nanoform, which was make In2S3/g-C3N4 composite photocatalyst. The obtained photocatalysts were characterized by X-ray diffraction, scanning electron microscope, and transmission microscope Fourier transform infrared spectroscopy. Photocurrent response analysis showed that the heterojunctions had higher photocatalytic activity for photodegradation of toluene than those pure g-C3N4. A 40% loading on g-C3N4 gave highest degradation...

10.1016/j.cpletx.2020.100049 article EN cc-by-nc-nd Chemical Physics Letters 2020-01-01

Passive mode-locked pulses with repetition frequencies in the range 40 to 90 GHz were observed blue-violet GaN-based quantum-well lasers without external cavities. The had two-section geometry built-in saturable absorber section. individual durations as short 3–5 ps at peak powers of around 320 mW.

10.1063/1.4798264 article EN Applied Physics Letters 2013-03-25

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and amplifier gain section. As a result the interplay between external bias applied to AS internal piezoelectric spontaneous polarization fields inherent MQWs, devices exhibit non-linear non-monotonic variations threshold current due quantum-confined Stark effect that takes place in MQWs. report how this tailors lasing characteristics...

10.1063/1.4768163 article EN Journal of Applied Physics 2012-11-15

We have extensively studied the frequency noise and relative intensity spectra in a tunable external-cavity InGaN diode laser at blue (420 nm) wavelengths. report flicker (1/f) frequency-noise behavior low Fourier frequencies measured using offset frequency-absorption spectroscopy on 85Rb vapor cells, which yields an estimated lasing linewidth of 870 kHz. From considerations high-dislocation density III nitride epitaxy, 1/f were expected to be larger than conventional III-V lasers....

10.1364/ol.39.001685 article EN Optics Letters 2014-03-13

Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420 nm has been realized. Lasing external cavity lengths of up to 50 mm is demonstrated, making integration practical sized intracavity elements possible. Spectral and beam profile measurements indicate best operation conditions in a semiconfocal configuration. threshold 20.9 W achieved for 49 long with output quality parameter M2 not exceeding 1.1.

10.1063/1.4757758 article EN Applied Physics Letters 2012-10-01

In the myopia correction surgery by femtosecond laser, such as Laser in Situ Keratomileusis (LASIK) and Small Incision Lenticule Extraction (SMILE), nonlinear refractive index of cornea may cause deviation cutting depth. order to improve cutting's accuracy reduce possibility undercorrection, coefficient n2 human must be measured with high accuracy. The spectral domain Z-scan technique can measure highly scattering biological tissues much better signal noise ratio thus than conventional...

10.1364/oe.441731 article EN cc-by Optics Express 2021-11-02

Optically pumped InGaN/GaN quantum well (QW) vertical-external-cavity surface-emitting laser operating at 420 nm wavelength with external cavity length of up to 50 mm has been realized. Use injection seeding enables us reach lasing operation even for pump pulse duration just slightly exceeding the roundtrip time. The carrier lifetime in QWs was measured be 2.5 ns, and emission obtained under pulses shorter (400 ps) or longer (10 ns) than QWs. We studied experimentally dependence threshold on...

10.1063/1.4789806 article EN Journal of Applied Physics 2013-01-28

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from continuous wave external cavity laser. We obtain solitary pulse generation when slave MSLD is driven near free running threshold, and peak output power significantly enhanced with respect to configuration. When well above reduces power. Using standard semiconductor rate equation model, find that both enhancement suppression effects are result partial bleaching...

10.1063/1.4907638 article EN Applied Physics Letters 2015-02-16

We have experimentally and theoretically investigate the effect of optical pump beam size on narrowband spin polarized pumping alkali atom vapor. developed a six-level model describing atoms applied this to an atomic vapor cell, accounting for transit time through wall collision effects. Our expression effects is derived from diffusion model. Overall, we obtained good agreement between theory measured relaxation constants.

10.1109/eftf.2014.7331476 article EN 2014-06-01

A technique for measuring the excited state lifetime τex of optical transitions in alkali atoms is presented. It a form pump-probe based on time-resolved transmission through atomic vapor cell. This can serve as an alternative to traditionally used photofluorescence methods when cells with heavily quenched fluorescence, where expected be order few nanoseconds, and highly sensitive fluorescence detectors sub-nanosecond temporal resolution that are required may not available. We use this...

10.1063/1.4929918 article EN Applied Physics Letters 2015-08-31

We experimentally measure the pressure broadening coefficient of absorption linewidth in <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">85</sup> Rb 5 xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> S <sub xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sub> -6 P xmlns:xlink="http://www.w3.org/1999/xlink">3/2</sub> transition (420 nm wavelength) due to collisions with N xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> buffer gas. In...

10.1109/eftf.2014.7331521 article EN 2014-06-01

We report on optical injection locking of Q-switched InGaN multi-section diode laser from CW tunable to produce solitary pulses at precise wavelength. To the best our knowledge, this has never been done before.

10.1109/islc.2014.202 article EN International Semiconductor Laser Conference 2014-09-01

We analyze transition from amplified spontaneous emission to Q-switched lasing in InGaN laser with absorber. find narrow region that requires us evoke cooperative recombination of two electron-hole pairs X or II configuration.

10.1109/islc.2014.243 article EN International Semiconductor Laser Conference 2014-09-01

We report the first detailed theoretical study of mode-locking dynamics in an active atomic clock based on a 420 nm wavelength, III-nitride vertical external cavity surface emitting laser with <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">85</sup> Rb vapor cell as intracavity saturable absorber.

10.1109/eftf.2012.6502344 article EN European Frequency and Time Forum 2012-04-01

Atomic clocks are a vital technology in the day to operation of modern society. While passive Rb and Cs microwave atomic find widespread practical applications today, active have potential surpass them frequency stability, compactness, simplicity. This dissertation is comprehensive study physics an clock based on modelocked external cavity semiconductor laser with 85Rb vapor cell saturable absorber. As starting point for establishing our concept, this encompasses optical interrogation...

10.5075/epfl-thesis-6526 article EN 2015-01-01

A semiconductor laser diode producing ultra-short optical pulses in the blue-violet range will find numerous applications ranging from next-generation 3D data storage devices to bio-medical diagnostic methods. In this communication we report generation of solitary width below 1.1 ps a tandem-cavity InGaN/InGaN diodes operating 415–425 nm wavelength range. Solitary are produced pulse-on-demand mode within narrow transient region between amplified spontaneous emission (ASE) and Q-switched...

10.1109/cleoe-iqec.2013.6801029 article EN 2013-05-01

InGaN-based laser diodes (LDs) are suitable for obtaining low-cost and compact short-pulse light sources in the blue-violet range exploiting either mode-locking or self-pulsating regimes. Typically these devices consist of a Fabry-Perot-type cavity with separate electrical p-contacts to define multiple sections: short reverse-biased section that acts as saturable absorber (SA) long forward-biased gain section. Recently we demonstrated 18 ps duration optical pulses under self-pulsation regime...

10.1109/islc.2012.6348355 article EN 2012-10-01

Summary form only. The ultrashort laser pulse has been one of the most important tools for plasma physics diagnostics due to its capability temporally freeze image and produce useful high temporal resolution characteristic information. Many experiments, especially density relevant ICF require a probe with not only short-pulse duration, shorter wavelength, but also precise time synchronization main beam hitting target. In order construct practical XG facility which is energy Nd:glass system...

10.1109/cleopr.1999.817909 article EN 2003-01-20
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