A5090269446- Radiation Effects in Electronics
- Semiconductor materials and devices
- Radiation Detection and Scintillator Technologies
- VLSI and Analog Circuit Testing
- Low-power high-performance VLSI design
- Radiation Therapy and Dosimetry
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Particle Detector Development and Performance
- Advanced Radiotherapy Techniques
- Nuclear Physics and Applications
- Luminescence Properties of Advanced Materials
- Education Pedagogy and Practices
- Nuclear reactor physics and engineering
- Education and Digital Technologies
- Ion-surface interactions and analysis
- Graphite, nuclear technology, radiation studies
- Medical Imaging Techniques and Applications
- Evasion and Academic Success Factors
- Probabilistic and Robust Engineering Design
- Advancements in Photolithography Techniques
- CCD and CMOS Imaging Sensors
- Silicon and Solar Cell Technologies
- Silicon Carbide Semiconductor Technologies
- Polymer Nanocomposite Synthesis and Irradiation
European Organization for Nuclear Research
2021-2025
Laboratoire Hubert Curien
2024-2025
Centre National de la Recherche Scientifique
2018-2025
Université de Montpellier
2018-2021
Institut d'Électronique et des Systèmes
2018-2020
Universidade Federal do Rio Grande do Sul
2016-2017
Universidade Federal do Rio Grande
2015-2016
A new parasitic, mixed-field, neutron-dominated irradiation station has been recently commissioned at the European Laboratory for Particle Physics (CERN). The is installed in Neutron Time-Of-Flight (n\_TOF) facility, taking advantage of secondary radiation produced by neutron spallation target. allows damage studies to be performed conditions that are closer ones encountered during operation particle accelerators; tests carried out will complementary standard on materials, usually with gamma...
Dosimetry is a crucial activity in irradiation campaigns to qualify electronics and materials operate radiation environments. In addition, it also provides means of monitoring levels accelerator environments prevent damage the machines improve system lifetime. Therefore, this work characterization radio-photo-luminescence (RPL) glass dosimeters as high-level monitor be used mixed fields observed CERN's environment well for qualification electronic components materials. Here, two methods...
The Super Proton Synchrotron (SPS) is the second largest accelerator at CERN where protons are accelerated between 16 GeV/c and 450 GeV/c. Beam losses, leading to mixed-field radiation of up MGy magnitude, pose a threat reliability electronic equipment polymer materials located in tunnel its vicinity. Particularly arc sectors, both main magnets sensors periodically arranged, Total Ionizing Dose (TID) concern for front-end electronics A Logarithmic Position System (ALPS). SPS equipped with...
A characterization of radiophotoluminescence (RPL) dosimeters at high doses X-ray radiation for applications in areas is presented. Commercial FD-7 silver doped phosphate glasses (1.5 mm x 8.5 mm) use CERN passive dosimetry are irradiated using commercial tubes. 1.5 thick aluminium filter used to harden the spectrum and improve dose homogeneity. Two irradiation campaigns presented, targeting ranging from about 1.3 kGy 0.46 MGy rates 0.6 kGy/h 6.3 kGy/h, respectively. Monte Carlo simulations...
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches optimize circuit design before irradiation tests, and support understanding post-irradiation data. This work proposes novel simplified methodology evaluate single-event effects (SEEs) cross-section. To validate proposed approach, we consider 6T SRAM cell case study four technological nodes....
Due to the intrinsic masking effects of combinational circuits in digital designs, Single-Event Transient (SET) were considered irrelevant compared data rupture caused by Upset (SEU) effects. However, importance considering SET Very-Large-System-Integration (VLSI) increases given reduction transistor dimensions and logic path depth advanced technology nodes. Accordingly, threat electronics systems for space applications must be carefully addressed along with SEU characterization. In this...
The radiation showers generated by the interaction of high-energy electrons with matter include neutrons an energy distribution peaked at MeV scale, produced via photonuclear reactions, allowing measurements neutron-induced Single-Event Effects in electronic devices. In this work we study a setup where 200-MeV electron beam CLEAR accelerator CERN is directed on aluminum target to produce field large neutron component. resulting environment analyzed measuring Upset (SEU) and Latchup rates...
The design methodology based on standard cells is widely used in a broad range of very-large-scale integration (VLSI) applications. Furthermore, several optimization algorithms can be employed to address different constraints such as power consumption or reliability. This paper evaluates the implications usage complex logic from 45-nm standard-cell library single-event transient (SET) sensitivity under heavy ions. Results show that even though reduction layout area obtained when adopting...
Radiation-hardening techniques can be extensively used in the design level to improve robustness of very large-scale integration (VLSI) circuits space applications. Accordingly, this work analyzes efficiency transistor folding layout improving single-event transient (SET) digital circuits. Additionally, diffusion splitting is proposed reduce area overhead multiple-finger designs. Besides increasing threshold linear energy transfer, results show that both also overall cross section and...
We study the neutron field at NEAR station of time flight (n_TOF) facility CERN, through Monte Carlo simulations, well-characterized static random access memories (SRAMs) and radio-photo-luminescence (RPL) dosimeters, with aim providing neutrons for electronics irradiation. Particle fluxes typical quantities relevant testing were simulated several test positions compared to those CERN high energy accelerator mixed-field (CHARM), highlighting similitudes differences. The SRAM detectors, based...
Radiophotoluminescence (RPL) FD-7 glass dosimeters find applications in low to high dose radiation environments. This work presents an experimental characterization of RPL dosimeter, irradiated with 100 kV X-ray tubes at room temperature doses ranging from 1.3 kGy 0.47 MGy, much higher their common use range. In this study, a customized set-up has been developed, allowing the online investigation transmission changes radiation, known as Radiation-Induced Attenuation (RIA), well recovery and...
Integrated Circuits are becoming more susceptible to numerous effects due the reduction of its robustness external noise. Additionally, increase uncertainty degree related many sources variation in manufacturing process contributes reliability issues. This work is aimed at presenting a comparative analysis radiation sensitivity different XOR implementations using two multigate devices: double-gate FinFET and Trigate. Trigate-based circuits have shown be robust than with improvement...
Temperature dependence is of utmost importance for the performance and power dissipation analysis. This work investigates temperature bulk double-gate FinFET Trigate MOSFET devices. Additionally, it also evaluated analysis Zero Coefficient (ZTC) condition. The results indicate that increase in leakage current can reach more than 40X when compared to nominal high-performance applications. devices have shown be sensitive these variations with difference up 19.7% I <sub...
In the atmosphere, it is generally understood that neutrons are main contributor to soft error rate (SER) in electronic devices. These particles indeed able trigger nuclear reactions sensitive regions of devices, leading secondary ions may ionize matter sufficiently upset a memory cell or induce transient signal, known as errors. For reliability purposes, crucial be estimate SER associated with given technology, which typically characterized by its volume and threshold linear energy transfer...