A5059069686- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
- Advanced Memory and Neural Computing
- Catalytic Processes in Materials Science
- Electrocatalysts for Energy Conversion
- Ion-surface interactions and analysis
- ZnO doping and properties
- Copper Interconnects and Reliability
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Advanced Nanomaterials in Catalysis
- Integrated Circuits and Semiconductor Failure Analysis
- Ammonia Synthesis and Nitrogen Reduction
- Nonlinear Optical Materials Studies
- Plasmonic and Surface Plasmon Research
- Gold and Silver Nanoparticles Synthesis and Applications
- Analytical Chemistry and Sensors
- Diamond and Carbon-based Materials Research
- Polymer crystallization and properties
- Forensic Fingerprint Detection Methods
- Crystallization and Solubility Studies
- Advanced Polymer Synthesis and Characterization
- X-ray Spectroscopy and Fluorescence Analysis
University of Helsinki
2022-2025
UCLouvain
2020-2022
Institut des Arts de Diffusion
2020
Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine
2020
National Institute for Materials Science
2013-2019
Charles University
2012-2018
Abstract The hydrogen evolution and nitrite reduction reactions are key to producing green ammonia. Antenna–reactor nanoparticles hold promise improve the performances of these transformations under visible‐light excitation, by combining plasmonic catalytic materials. However, current materials involve compromising either on activity or enhancement also lack control reaction selectivity. Here, we demonstrate that ultralow loadings non‐uniform surface segregation component optimize...
Plasmonic catalysis has been employed to enhance molecular transformations under visible light excitation, leveraging the localized surface plasmon resonance (LSPR) in plasmonic nanoparticles. While for accelerating reaction rates, achieving control over selectivity remained a challenge. In addition, incorporation of catalytic components into traditional plasmonic-catalytic antenna-reactor nanoparticles often leads decrease optical absorption. To address these issues, this study focuses on...
Molybdenum oxide thin films are of interest due to a large range possible phases, high work functions, and catalytic activity. These have applications in areas, such as sensors, chromic, semiconductor devices. In this work, molybdenum(II) acetate dimer precursor was used with ozone for the atomic layer deposition molybdenum films. The were grown at 200–300 °C yielding highly crystalline even lowest temperatures. X-ray diffraction measurements showed that as-deposited consist suboxides and/or...
The development of cost-effective and efficient electrocatalysts for the hydrogen evolution reaction (HER) is critical to advancing green production technologies. Here, we present a plasmonic tungsten oxide (W18O49) material integrated with ultralow platinum (Pt) loadings (0.4, 0.8, 1.6 wt %) that delivers high HER performances under both dark visible light conditions. 0.4 % Pt–W18O49 catalyst exhibits remarkable mass activity, outperforming commercial Pt/C by factors 15 30 740 nm LED...
Hematite (Fe2O3) is a promising visible-light-active semiconductor material for photoelectrocatalytic applications; however, it has yet to achieve its theoretical maximum efficiency. Researchers globally are making significant efforts enhance performance and surpass the current efficiency limitations. Here, we report of Ti x Fe2-x O3 films deposited by atomic layer deposition (ALD) using FeCp2 Ti(OMe)4 as precursors. The response surface methodology (RSM) with face-centered central composite...
In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro(triethylphosphine)gold(I) [AuCl(PEt3)] and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity were deposited on different substrate materials at 180 °C the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after film reaches full coverage. have a very low resistivity close to bulk value, minimal amount of impurities could be detected. reaction...
Abstract Molecular layer deposition (MLD) offers molecular level control in of organic and hybrid thin films. This article describes a new type inorganic–organic silicon-based MLD process where Aluminium chloride (AlCl 3 ) 1,4-bis(triethoxysilyl)benzene (BTEB) were used as precursors. Hybrid films deposited at temperature range 300 to 500 °C high growth per cycle (GPC) up 1.94 Å was obtained. Field emission scanning electron microscopy (FESEM) atomic force (AFM) analyze the appearance film...
The morphology and composition of CeOx films prepared by r.f. magnetron sputtering on a graphite foil have been investigated mainly using microscopy methods. This study presents the formation nanocrystalline layers with porous structure due to modification carbon support cerium carbide crystallites as result deposition process. Chemical analyses different thicknesses performed energy dispersive X-ray spectroscopy, electron loss spectroscopy photoelectron pointed reduction oxide layers. In...
In this work, we developed a new ALD process for nickel metal from dichlorobis(triethylphosphine)nickel(II) (NiCl2(PEt3)2) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine ((Me3Ge)2DHP). A series of phosphine adducts cobalt halides were synthesized characterized their volatility thermal stability. Also (Me3Ge)2DHP is novel reducing agent in ALD. Smooth films deposited on different substrate materials at 110 °C, which the lowest deposition temperature Ni found literature. The growth rate 0.2...
Abstract The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer (ALD) offers exceptional conformality, uniformity, thickness control on spatially complex structures. This paper presents a comprehensive study the thermal ALD MoC x with MoCl 5 1,4‐bis(trimethylgermyl)‐1,4‐dihydropyrazine [(Me 3 Ge) 2 DHP] as precursors,...
In this paper, we introduce a vacuum cluster tool designed specifically for studying reaction mechanisms in atomic layer deposition (ALD) and etching (ALE) processes. the tool, commercial flow-type ALD reactor is vacuo connected to set of UHV chambers so that versatile surface characterization possible without breaking environment. This way composition intermediates formed during precursor or etchant pulses can be studied very close true ALE processing conditions. Measurements done at each...
Providing inert materials with a biochemical function, for example using proteins, is cornerstone technology underlying many applications. However, the controlled construction of protein thin films remains major challenge. Here, an innovative solvent-free approach deposition reported, lysozyme as model. By diverting time-of-flight secondary ion mass spectrometer (ToF-SIMS) from its standard analytical large argon clusters were used to achieve transfer. A target consisting pool proteins was...
Abstract The hydrogen evolution and nitrite reduction reactions are key to producing green ammonia. Antenna–reactor nanoparticles hold promise improve the performances of these transformations under visible‐light excitation, by combining plasmonic catalytic materials. However, current materials involve compromising either on activity or enhancement also lack control reaction selectivity. Here, we demonstrate that ultralow loadings non‐uniform surface segregation component optimize...
Fabrication of future semiconductor devices requires new and inventive self-aligning patterning processes. One such process is area-selective etching (ASE) polymers, which exploits different catalytic properties surfaces. In ASE, a polymer film decomposed only from the top catalytically active materials, while stays intact on inactive materials. This means that self-aligned, thus avoiding edge placement errors. So far, by ASE polymers has been demonstrated in oxidative atmospheres. Here, we...
The surface plasmon resonances of Au nanoparticles have attracted wide interest for the promising functionalities in nonlinear plasmonics and nanophotonics recent decades. However, third-order susceptibility ${\ensuremath{\chi}}^{(3)}$ nanostructures, one crucial parameters to describe optical properties, had been experimentally described at only a few wavelengths. These fragmental results precluded understanding physical origins. Here, we evaluated real imaginary components broad range...
Abstract This paper presents preparation of boron‐doped Al 2 O 3 thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures 160–300 °C are studied, giving a maximum growth per cycle (GPC) 0.77 Å at 200 °C. Field emission scanning electron microscopy (FESEM) force (AFM) used to study the surface morphology roughness films. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR‐FTIR),...
NbCl 5 was found to be a highly selective vapor phase etchant for Ta 2 O , TiO and ZrO . The mechanism of etching proven with thermodynamic QMS studies, selectivity demonstrated on patterned Al 3 /Ta double layer.
Hematite (Fe2O3) is a promising visible-light-active semiconductor material for photoelectrocatalytic applications; however, it has yet to achieve its theoretical maximum efficiency. Researchers globally are making significant efforts enhance performance and surpass the current efficiency limitations. Here we report of TixFe2-xO3 films deposited by atomic layer deposition (ALD) using FeCp2 Ti(OMe)4 as precursors. Response Surface Methodology (RSM) with face-centered central composite design...
Hematite (Fe2O3) is a promising visible-light-active semiconductor material for photoelectrocatalytic applications; however, it has yet to achieve its theoretical maximum efficiency. Researchers globally are making significant efforts enhance performance and surpass the current efficiency limitations. Here we report of TixFe2-xO3 films deposited by atomic layer deposition (ALD) using FeCp2 Ti(OMe)4 as precursors. Response Surface Methodology (RSM) with face-centered central composite design...