A5001466579- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Medical Imaging Techniques and Applications
- Radiation Detection and Scintillator Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Radiotherapy Techniques
- Advanced X-ray and CT Imaging
- Ferroelectric and Negative Capacitance Devices
- Nuclear Physics and Applications
- Psychotherapy Techniques and Applications
- Radiation Therapy and Dosimetry
- Radiation Dose and Imaging
- Microbial Inactivation Methods
- Balkans: History, Politics, Society
- Digital Radiography and Breast Imaging
- Advanced Memory and Neural Computing
- Advanced Semiconductor Detectors and Materials
- Counseling Practices and Supervision
- Counseling, Therapy, and Family Dynamics
- Silicon Carbide Semiconductor Technologies
- Italian Fascism and Post-war Society
- Atomic and Subatomic Physics Research
- Radiomics and Machine Learning in Medical Imaging
- Electronic and Structural Properties of Oxides
- Radioactive contamination and transfer
Louisiana State University
2012-2025
UPMC Health System
2019-2020
Swedish Medical Center
2019-2020
American Association of Physicists in Medicine
2019-2020
Ashland (United States)
2020
Duke Medical Center
2020
Johns Hopkins University
2020
Philips (Finland)
2020
John Wiley & Sons (United States)
2020
University of Wisconsin System
2019
This work investigates the dose-response curves of GAFCHROMIC EBT, EBT2, and EBT3 radiochromic films using synchrotron-produced monochromatic x-ray beams. EBT2 film is being utilized for dose verification in photoactivated Auger electron therapy at Louisiana State University CAMD synchrotron facility. Monochromatic beams 25, 30, 35 keV were generated on tomography beamline CAMD. Ion chamber depth-dose measurements used to determine delivered irradiated depths from 0.7 8.5 cm a 10x10x10-cm3...
The use of radioactive materials in the United States has been tightly regulated by Nuclear Regulatory Commission and other entities for many decades. In 2015, however, Joint began to require hospital-based nuclear medicine departments conduct shielding designs evaluations material areas, mirroring established x-ray practices. NCRP Report No. 147 guides diagnostic medical shielding, but obviously cannot be used alone applications. rising demand theranostic particularly necessitates updated...
Abstract Complex ferromagnetic oxides such as La 0.67 Sr 0.33 MnO 3 (LSMO) offer pathways for creating energy‐efficient spintronic devices with new functionalities. LSMO exhibits high‐temperature ferromagnetism, half metallicity, sharp resonance linewidth, low damping, and a large anisotropic magnetoresistance response. Combined Pt, proven material high spin‐charge conversion efficiency, can be used to create robust nano‐oscillators neuromorphic computing. Ferromagnetic (FMR) device‐level...
We introduce a figure of merit (FoM) to quantify RRAM read current instability, complex multi-level RTN-like signal, generally observed in current. Log(FoM) follows normal statistical distribution describing the probability occurrence fluctuation given amplitude. demonstrate that peak-to-peak RTN amplitude decreases with reduction enables scaling down operating currents. The developed model for instability allows estimate maximum size and minimum reliable operations high density array.
Abstract The morphology of cornified structures is notoriously difficult to analyse because the extreme range hardness their component tissues. Hence, a correlative approach using light microscopy, scanning electron three‐dimensional reconstructions based on x‐ray computed tomography data, and graphic modeling was applied study claw sheath domesticated cat as model for digital end organs. highly complex architecture generated by living epidermis that supported dermis distal phalanx. latter...
Instability of InGaAs channel nMOSFETs with the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> / ZrO gate stack under positive bias stress demonstrates recoverable and unrecoverable components, which can be tentatively assigned to pre-existing generated defects, respectively. The component is determined primarily associated defects in interfacial layer (IL), slow trapping at...
The author's goal was to discover strategies used by psychotherapy supervisors judged be excellent teachers.In an earlier study, experienced teachers of rated the level excellence 34 different in 53 videotaped supervision sessions. In this authors examined transcripts nine videotapes assigned highest ratings as well three mid-level and low previous study. analyzing these transcripts, drew from their experience with complete set videotapes.Supervisors high allowed resident's story about...
An ultra-short pulse current–voltage ( I – V ) measurement technique has been applied to high-κ gate transistors investigate the effects of fast transient charging. It is shown that electron trapping may contribute degradation transistor performance (i.e., low mobility) observed with direct current (DC) characterization methods, as well techniques in tens microseconds range and above. In particular, samples significant trapping, drain saturation regime improve by up 40% from its DC values...
A simple model based on the representation of capacitive coupling effects between front- and back-gate channels, has been developed for tri-gate pi-gate SOI MOSFETs. The validated using numerical simulation body factor in such devices, as well by experimental results. is much smaller than regular, single-gate silicon-on-insulator devices because enhanced gate channel lateral gates shield device from electrostatic field back gate.
Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics high-k devices, such as V/sub th/ instability, low DC mobility and poor reliability. The intrinsic transistors free from FTCE demonstrated using ultra-short pulsed I-V measurements, it is that devices can much higher than what has been observed in based measurements. model suggests many characterization methods developed for SiO/sub 2/ not sufficiently adequate exhibit significant...
We propose a physical model for the fast component ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$<1$ </tex-math></inline-formula> s) of positive bias temperature instability (PBTI) process in SiO <sub xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> /HfO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate-stacks. The is based on electron-phonon interaction governing trapping/emission...
Purpose: Photon counting spectral (PCS) computed tomography (CT) shows promise for breast imaging. An issue with current photon‐counting detectors is low count rate capabilities, artifacts resulting from nonuniform across the field of view, and suboptimal information. These issues are addressed in part by using tissue‐equivalent adaptive filtration x‐ray beam. The purpose study was to investigate effect on different aspects PCS CT. Methods: theoretical formulation filter shape derived...
ABSTRACT: Several years ago, we proposed that loss of cell membrane structural integrity by electroporation is a substantial cause tissue necrosis in victims electrical trauma. 1 Specifically, this involves the permeabilization lipid bilayer thermal and forces. We further suggested certain mild surfactants low concentration could induce sealing permeabilized bilayers salvage cells had not been extensively heat‐damaged. Successful restoration transport properties using surfactant poloxamer...
Journal Article Trieste, 1941–1954: The Ethnic, Political and Ideological Struggle Get access Struggle. By Bogdan C. Novak. Foreword by William H. McNeill. Chicago, London: University of Chicago Press. 1970. 526 pp. Bibliog. Index. £7.45. Kenneth Matthews Search for other works this author on: Oxford Academic Google Scholar International Affairs, Volume 47, Issue 2, April 1971, Page 366, https://doi.org/10.2307/2613941 Published: 01 1971
We have developed novel real-time methodology to determine intrinsic forming and switching characteristics of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> based RRAM. Elimination parasitics in 50nm × cross-bar 1T1R devices (C xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> <; 50fF) integrated on 300mm wafers using fab-friendly TiN electrodes enabled superior control high low resistance a conductive filament (CF). Sub 50fF also...
This paper reports tri-gate sub-100 nm In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL 10 mV/V, together excellent carrier transport g xmlns:xlink="http://www.w3.org/1999/xlink">m, max</sub> > 1.5 mS/μm, at V xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> 0.5 V. result is the best balance and in any...
The aim of this study was to explore the behavior psychotherapy supervisors by using Psychotherapy Supervision Inventory.The authors used Inventory rate 53 videotaped supervision sessions 34 different supervisors. They also variable rater's perception excellence supervisor as a teacher. data were subjected cluster analysis and K-means analysis. Discriminant function analyses applied comparison 19 with two residents all in three years training. relationship between rater-perceived scores...
SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and HfO > gate dielectrics with TiN electrodes were subjected to an aggressive post-fabrication plasma exposure. A comparison of plate comb antenna structures before after exposure demonstrated that the antennae demonstrate evidence plasma-induced damage while did not. The physical origin PD in devices was found be amphoteric interface states, primary effect charges trapped bulk high-K film.