A5038007373- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Metal and Thin Film Mechanics
- Hybrid Renewable Energy Systems
- Ion-surface interactions and analysis
- Ferroelectric and Negative Capacitance Devices
- Energy Load and Power Forecasting
- Smart Grid Energy Management
- Surface Modification and Superhydrophobicity
- Thermodynamic and Exergetic Analyses of Power and Cooling Systems
- Copper Interconnects and Reliability
- Microfluidic and Capillary Electrophoresis Applications
- Machine Learning and ELM
- Power Transformer Diagnostics and Insulation
- Advanced battery technologies research
- Fuel Cells and Related Materials
- Pickering emulsions and particle stabilization
- Thin-Film Transistor Technologies
- Diamond and Carbon-based Materials Research
- solar cell performance optimization
- Solar Thermal and Photovoltaic Systems
- Carbon Nanotubes in Composites
- Semiconductor materials and interfaces
Northwest A&F University
2023-2024
Arizona State University
2012
Shanghai Institute of Ceramics
2012
Chinese Academy of Sciences
2012
Motorola (United States)
2002-2003
The University of Texas at Austin
1999-2000
Power transformers are the vital and expensive components of power system. Timely identifying diagnosing transformer faults is critical to maintaining stability grid. As a sensitive economical tool, frequency response analysis (FRA) method has been widely employed detect winding faults. However, it still challenge accurately identify fault types degrees only by FRA method. In this article, new diagnosis that combines with kernel-based extreme learning machine (KELM) optimized seagull...
We have fabricated porous membranes using a parylene encapsulated vertically aligned forest of multi-walled carbon nanotubes (MWCNTs, about 7 nm inner diameter). The transport charged particles in electrolyte through these was studied by applying electric field and pressure. Under an the range 4.4 × 10(4) V m(-1), electrophoresis instead electroomosis is found to be main mechanism for ion transport. Small molecules 5 gold nanoparticles can driven field. However, small biomolecules, like DNA...
In response to the urgent need address climate change and reduce carbon emissions, there has been a growing interest in innovative approaches that integrate AI CDR technology. This article provides comprehensive review of current state research this field aims highlight its potential implications with clear focus on integration CDR. Specifically, paper outlines four main for integrating CDR: accurate emissions assessment, optimized energy system configuration, real-time monitoring scheduling...
Balancing gate leakage reduction, device performance, and dielectric reliability is a major challenge for oxynitride used as advanced technology. As compared to RTONO oxynitride, pMOSFET threshold voltage shift transconductance degradation have been problematic devices using remote plasma nitridation (RPN) or decoupled (DPN) process due non-optimal nitrogen profile in the film. In this paper, we report that of DPN can be engineered primarily by tuning pressure after optimizing other...
This letter demonstrates the effect of H/sub 2/ percentage during oxidation on quality in-situ steam generated (ISSG) oxide. Our results indicate reliability ISSG oxide is considerably improved as increases, from viewpoint stress-induced leakage current (SILC) and charge-to-breakdown (Q/sub BD/). Such enhanced may be explained by reduction defects in SiO/sub network within structural transition layer, such Si dangling bonds, weak Si-Si strained Si-O highly reactive oxygen atoms which are...
We report a 100 nm modular bulk CMOS technology platform with multi Vt and gate oxide integrated transistors that enables device circuit co-design (M. Fukuma et al., VLSI Tech., 2000) techniques (e.g. well biasing power down/reduction) for low standby (LSP), high performance (HP), speed (HS), RF/analog system on chip (SoC) applications. The transistor performances are comparable to or better than recently reported data at the node. This also features an all-layer copper/low-k (<3.0)...
In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Luo, N. Al-Shareef, Brown, M. Laughery, V. Watt, Karamcheti, Jackson, R. Huff, SPIE 4181, 220 (2000).] We show in this letter that nitridation ISSG oxide using a remote...
We report for the first time electrical characterization of HfO/sub 2/ p- and n-MOSFETs with CVD TiN PVD TaSiN gates respectively fabricated using conventional CMOS integration. Their performance is compared to TiN-gated SiO/sub n- p-MOSFETs. To understand issues metal on high K gate dielectrics, MOSFETs were extensively characterized. At 10 nA//spl mu/m leakage, 0.345 mA//spl drive current was obtained from TiN/HfO/sub show about 10/sup 4/ times reduction in leakage poly/SiO/sub devices.
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Z. X. Jiang, K. Kim, J. Lerma, D. Sieloff, T. Y. Luo, Yang, Triyoso, H. Tseng, P. Tobin, N. Ramani; Characterization of nitrogen distribution in HfO2 with low energy secondary ion mass spectrometry. Journal Vacuum Science Technology A 1 July 2005; 23 (4): 589–592. https://doi.org/10.1116/1.1914811 Download...
Abstract Good accuracy in depth profile analyses of nitrogen ultrathin oxynitride films is desirable for process development and routine monitoring. Low energy SIMS one the techniques that has found success accurate characterization thin films. This work investigated artifacts a typical analysis with current technique ways to improve by selecting optimal analytical conditions. It was demonstrated surface roughness developed rapidly SiO 2 /Si stack when it bombarded an O + beam at 250 eV...
A generalized reliability model of BTI is presented where it shown that gate stacks with similar interfacial layer lie on the same NBTI vs. E-field universal curve and those bulk PBTI curve. From these curves, an optimal stack can be derived for which NBTI=PBTI
Phenomenological time-dependent dielectric breakdown (TDDB) and bias-temperature instability (BTI) models are demonstrated to enable reasonably accurate reliability projections for several generations of silicon oxynitride-based transistors circuits with EOT down /spl sim/1.3 nm. Furthermore, while performance can be traded-off by engineering the gate coupled device integration, benchmarking published data suggests that achievable at each transistor node falls within an intrinsically...