Customers’ expectations of timely and accurate delivery pickup online purchases pose a new challenge to last-mile delivery. When the goods sent customers are not received, they must be returned warehouse. This situation provides high additional cost. Parcel locker systems convenience stores have been launched solve this problem serve as payment stations. research investigates distribution in augmented system with three service modes: home pickup, parcel or pickup. Previously, simultaneous...

This study presents a comprehensive investigation of the impact deposition temperature on HfxZr1−xO2 (HZO) ferroelectric layer random access memory with TaN electrodes. mainly focuses its electrical characteristics and compares differences. It is revealed that plays crucial role in determining crystal structure HZO, which can exhibit combination tetragonal orthorhombic phases or exist solely one two phases. Furthermore, grain size HZO varies temperature. These findings correspond well to...

Colorectal cancer is the leading cause of cancer-associated morbidity and mortality worldwide. One causes developing colorectal untreated colon adenomatous polyps. Clinically, polyps are detected in colonoscopy malignancies determined according to biopsy. To provide a quick objective assessment gastroenterologists, this study proposed quantitative polyp classification via various image features colonoscopy. The collected database was composed 1991 images including 1053 hyperplastic 938...

A sensitive method for the determination of mexiletine and lidocaine using surfactant-assisted dispersive liquid-liquid microextraction coupled with capillary electrophoresis was developed. Triton X-100 dichloromethane were used as agent extraction solvent, respectively. After extraction, analyzed ultraviolet detection. The detection sensitivity further enhanced through use field-amplified sample stacking. Under optimal stacking conditions, calibration curves linear over a concentration...

Abstract A method of using non‐volatile and fast ferroelectric field‐effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized. Then, gate body function as input terminals, which used write device, based on voltage. Finally, output signals can be easily read through drain current. Of 10 Institute Electrical Electronics Engineers (IEEE) standard gates, eight implemented proposed operation alone by following definitions listed herein....

Fluoroquinolones (FQs) are potent antimicrobials with multiple effects on host cells and tissues. Although FQs can attenuate cancer invasion metastasis, the underlying molecular mechanisms remain unclear. Matrix metalloproteinase-9 (MMP-9) has functional roles in tumor angiogenesis, invasion, is associated progression poor prognosis, suggesting that inhibitors of MMP-9 activity transcription prime candidates for therapy. Despite numerous preclinical data supporting use as anticancer drugs,...

In this letter, the electrical characteristics of Ti/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN resistive random access memory (RRAM) were thoroughly investigated. An abnormal current degradation was seen in DC sweeping cycle. Both on-state and off-state clearly exhibited with time. Next, fitting analysis used to investigate carrier transport mechanisms. The results indicate that mechanism changed from space-charge-limited...

Abstract In this work, Ag-doped HfO 2 -based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of RRAM via-hole structure. After doping Ag into as switching layer, devices could execute without a high-voltage forming process. The conduction mechanism subsequently validated by current fitting analysis. Electric field simulation also utilized to observe electric distribution finally...

In this letter, a light recovery method is proposed to analyze defect concentration and energy level distribution by changing the wavelength. The AlGaN/GaN high electron mobility transistors (HEMTs) under hot carrier stress (HCS) conditions will experience severe electrical degradation. threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\textit {th}}$ </tex-math></inline-formula> )...

In this study, the reliability issues are discussed under dc and ac negative gate bias stress (ac-NGBS) in Al <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_\text{2}$</tex-math> </inline-formula> O notation="LaTeX">$_\text{3}$</tex-math> /Si N notation="LaTeX">$_\text{4}$</tex-math> metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). Converse degradation between these two...

Abstract In this paper, an extraction method for measuring impact ionization-induced hole current in gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. The results show that the non-monotonic ionization characteristic can be easily acquired by method. Further, different hot-carrier stress (HCS) conditions obtained based on I G – V curve, and reliability tests act as verification of impact-ionization curve. addition, electrical...

Abstract In this study, a one transistor resistor (1T1R) structure combining fin‐like low‐temperature polycrystalline‐silicon (LTPS) and resistive random access memory (RRAM) is successfully fabricated. For the LTPS transistor, both n‐type p‐types show excellent electrical output characteristics. Fin‐like produces more stable Also, forming current–voltage ( I – V ) characteristics are measured in RRAM exhibits voltage of about −1.9 V. As for switching property, devices performance, with set...

The HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) ferroelectric material is a promising for memory and compatible with the semiconductor process random access (FeRAM) negative capacitance field effect transistor. However, defects often exist in grain boundary to influence performance or reliability of devices. In addition, uniformity between devices must be considered when they are mass-produced. Therefore, size will become...

In this study, we propose a novel logic to obtain max/min in-memory computing. The one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) is used in study order provide steady and good electrical characteristics. By changing the gate voltage, RRAM can achieve multiple resistance states. Using property, different digital signals be defined as states of RRAM. Moreover, max min computing completed by only one 1T1R device using set reset process addition, use pulse measurements...

Traditionally, metal is used for the top electrode (TE) in HfO2-based resistance random access memory. When transparent indium–tin–oxide (ITO) as TE, different forming processes, including lower voltages and higher currents, are exhibited. This work investigates process with such a TE under UV illumination. In addition, thicknesses device cell sizes also investigated to confirm results. Finally, possible conduction model provided explain mechanisms UV-light illumination during process.

In this paper, the instability mechanism of resistive random access memory (RRAM) was investigated, and a technique developed to stabilize distribution high resistance states (HRS) better concentrate set voltage. Due accumulation oxygen, an interface-type switching characteristic observed on I-V curves beneath filament-type behavior. work, is used fit natural HRS as analysis mechanism. According results, attributed excess oxygen ions left from lower content vacancy recombination during reset...

Herein, the supercritical hydrogen treatment is proposed to improve performance of zinc oxide‐based resistive random access memory. After treatment, treated device not only achieves forming‐free characteristic but also gets enhanced in its memory window, reset voltage, and reliability. Moreover, X‐Ray photoelectron spectroscopy analysis confirms since decreases concentration ZnO bonding oxide thin film, leading conductive filament be constructed switching layer. Next, carrier transport...

The designed LHM unit cell can indeed achieve gain improvement. It is easy and cheap to fabricate our planar structure by using FR-4 slab. Our results show that a two-layer of radome improvement 3 dB. be further improved increasing the number layers. layers determined from requirement particular gains for different applications. However, more than 12 will produce little enhancement in this structure. Since placed very close antenna only covers area radiation patch, extra volume limited. In...

Abstract This paper investigates the difference in electrical performance and reliability arising from using either titanium nitride (TiN) or tantalum (TaN) as electrode ferroelectric random access memories. Because lattice constant of TaN is better matched to HZO, TaN-electrode device exhibits characteristic. However, leakage increases significantly after wake up. To figure out this phenomenon, current fitting implemented. According results conduction mechanisms, existence oxygen vacancies...

As a transmitter power amplifier (PA), the electrical output characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs) are closely related to drain current versus voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{d}$ </tex-math></inline-formula> – notation="LaTeX">${V}_{d}$ ) characteristics. Any abnormalities in will seriously affect device performance. Therefore,...

Transforming growth factor beta 1(TGF‐ß1) is a famous known which promotes malignancy and enhances tumor metastasis by inducing epithelial‐mesenchymal transition (EMT). Ananixanthone(GMP15), derivative of xanthone, extracted from Calophyllum teysmannii has been reported to show lower toxicity compared xanthone. Previous study showed that xanthone repressed TGF‐ ß1‐mediated EMT, however there no about GMP15. Hence, in this study, we determine the effect GMP15 ß1 signaling. We found suppressed...