A5104831728- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Magnetic properties of thin films
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Electronic and Structural Properties of Oxides
- Copper Interconnects and Reliability
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Microwave Engineering and Waveguides
- Advanced Memory and Neural Computing
- Parallel Computing and Optimization Techniques
- Optical Network Technologies
- Advanced Optical Imaging Technologies
- Semiconductor Lasers and Optical Devices
- Advancements in Photolithography Techniques
- Photonic and Optical Devices
- Advancements in PLL and VCO Technologies
- Electrowetting and Microfluidic Technologies
- Caching and Content Delivery
- Network Traffic and Congestion Control
- Microstructure and Mechanical Properties of Steels
- Advanced Materials Characterization Techniques
- Full-Duplex Wireless Communications
Samsung (South Korea)
2010-2024
Samsung (United Kingdom)
2017
Sungkyunkwan University
2011-2016
Pohang University of Science and Technology
2013
Samsung (United States)
1997-2006
The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics deposited by atomic-layer deposition (ALD) were investigated. chemical state the films in relation to film thickness postannealing temperature examined x-ray diffraction photoelectron spectroscopy. An interfacial layer hafnium silicate with an amorphous was grown on oxidized Si substrate at initial growth stage. are closely affected depended films. 45 Å thick changed into a polycrystalline after...
Increasing demands on high-data-rate and low-latency cellular communications are accelerating the developments of millimeter-wave (mm-wave) systems for 5G NR in 28 39GHz bands. In order to provide communication worldwide, high-performance low-cost RF chipset solutions required. Recently, mm-wave CMOS/BiCMOS phased-array transceivers 28GHz band have been reported [1]–[5]. However, there very limited reports [6], which is one main frequency bands US, Canada, China other countries. this paper,...
High density 1Gb embedded STT-MRAM in 28nm FDSOI technology was successfully demonstrated. Based on the highly reliable and manufacturable eMRAM technology, high yield over 90% achieved at operating temperature from −40°c to 105°c with satisfying read, write function 10 years retention 105°c. These results are mainly attributed advanced process for better control of MTJ CD, window robust circuit design chip. properties can be systematically adjusted by tailoring stack module process....
We successfully demonstrated the manufacturability of 8Mb STT-MRAM embedded in 28nm FDSOI logic platform by achieving stable functionality and robust package level reliability. Read margin were greatly improved increasing TMR value also reducing distribution cell resistance using advanced MTJ stack patterning technology. Write was increased improving efficiency novel integration process. Its product reliability confirmed with passing HTOL 1000 hours tests, 10 <sup...
7nm CMOS FinFET technology featuring EUV lithography, 4 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> gen. dual Fin and 2 xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> multi-eWF gate stack is presented, providing 20% faster speed or consuming 35% less total power over 10nm [1]. fully applied to MOL contacts minimum-pitched metal/via interconnects, can reduce >25% mask steps with higher fidelity smaller CD variation. A <inf...
We present the most energy-efficient 16 Mb non-volatile RAM (nvRAM) product with nearly unlimited endurance by using 28-nm embedded MRAM (eMRAM) technology. Among commercially available standalone nvRAM products, this features smallest package dimension of 30 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at and best-in-class active power 14 mW (read) 27 (write). By extensive testing, over 1E14 cycles - 25 °C 10-years data retention...
The interfacial characteristics of gate stack structure HfO2 dielectrics on strained Si0.7Ge0.3 deposited by atomic-layer deposition were investigated. An layer including GeOx layers was grown a SiGe substrate, and the thickness at decreased after annealing treatment, while SiO2 increased. ∼50-Å-thick film with an amorphous converted into polycrystalline rapid temperature over 700 °C for 5 min. silicate effectively suppressed formation, formed treatment. formation in as-grown resulted...
The characteristics of nitrided HfO2 films suggest that the diffusion Si from substrate to film surface is induced by annealing in an NH3 ambient and incorporation N closely related Si. Changes core-level energy state 1s peaks indicate quantity incorporated into drastically increases with increasing temperature, especially at temperatures over 900°C. mostly bonded diffused film, while some high temperature. Some molecular N2 generated which easily out after additional annealing. Moreover,...
We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting smallest macro size (0.08 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Mb) reported to date. Compared SRAM that is commonly used eMRAM provides 47% area saving. For applications, read disturbance and endurance are most critical reliability considerations. With magnetic tunnel junction process improvements, we have verified...
We demonstrated highly reliable and manufacturable 16Mb magnetic random access memory (eMRAM) embedded in 14nm FinFET logic by achieving high yield over 90% at an operating temperature ranging from $-40^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ passing the PKG reliability tests, such as HTOL endurance 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles. In addition, for automotive application further scaling down, we confirmed...
SrTiO 3 (STO) thin films were deposited in the deposition temperature range of 250–350 °C by plasma enhanced atomic layer (PEALD) with Sr(tmhd)2 (tmhd=tetramethyl heptanedionate) and Ti(i-OPr)4 (i-OPr=iso-propoxide) as a precursor. Two precursors dissolved tetrahydrofuran, delivered into vaporizer separately newly developed pulse injection method, vapor mixture was introduced reactor. An argon purge inserted after precursor afterward, generated oxygen introduction. Deposition rate saturated...
STT-MRAM has great attention as next generation memory to replace commercialized memory. However, not many articles are available on various MRAM reliability items. In this paper, we studied FBC trend of with ECC off mode under stresses. We also show characterization magnetic immunity for product design considerations. The showed robustness against the changes even after package level stresses, stress and radiation stress. negligible became zero mode. This suggests that our intrinsic is...
This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF elements a single-chip achieve high-level of TX EIRP RX sensitivity. Several approaches gain, P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT</inf> , stability, reliability linearity enhancement techniques are applied...
We demonstrate embedded STT-MRAM fully integrated onto 28nm CIS logic platform, highlighting the world-best macro density of 13.94 Mb/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The provides 55% area saving over SRAM. MTJ processes are compatible with standard 3D-stacked integration that require sufficient 400°C heat budget. stack has also been improved for frame buffer applications, achieving write speed <50ns and endurance...
This article presents a 16-Gb/s/pin 0.764-pJ/b single-ended four-level pulse-amplitude modulation (PAM-4) transceiver in 4-nm CMOS process. A switching-jitter compensation technique is proposed the receiver (RX) to improve timing margins from 0.31 0.37 UI at 16 Gb/s, as it adjusts transition slope of front-end outputs. To compensate for signal-to-noise ratio (SNR) degradation PAM-4 signal, relaxed impedance matching used, where 20 <inline-formula...
We present the gate-dependent photoconductivity measurements of single layer graphene ribbons grafted with zinc porphyrin molecules Zn(OEP). The Zn(OEP)-graphene showed a maximum 610% increase in its photo-sensitivity compared to bare samples. Furthermore, measured photocurrent exhibited strong dependence on gate bias, light power, and wavelength. These dependences clear evidence excitation carriers Zn(OEP) their energy transfer graphene.
We demonstrate highly reliable STT-MRAM whose array-level write error has been eliminated by lowering the density of domain wall pinning sites in MTJs. The core part investigation includes identification and quantification sites, characterization modeling correlation with rate. experimental results show that is geometrically localized reproduced upon repeated writing cycles. By controlling pinning, we obtain high-density MTJ array having superior reliability without notable trailing bits fail.
Abstract A 7‐inch full‐color low‐temperature poly‐Si TFT‐LCD with fully integrated driver circuits has been developed. Employing a novel LDD structure in the CMOS drivers, highly stable devices have attained. It was designed to provide various types of images, such as full, cinema, normal, and wide mode. The TFTLCD is applicable for car‐navigation system or PDA applications.
Abstract We evaluated new manufacturing process featuring with integration of C/F and TFT Array, Rigid spacer as an assistant black matrix, organic insulator for multi‐purpose color filter protection via hole formation. By combining conventional 5 mask TN mode top pixel electrode architecture, we could develop novel displaying performance enhancement improved productivity. 15.0 inch‐XGA prototype panel up to 80% final aperture ratio 25% increase display brightness was fabricated.