A5010701286- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Radio Frequency Integrated Circuit Design
- Microwave Engineering and Waveguides
- Silicon Carbide Semiconductor Technologies
- Diverse Approaches in Healthcare and Education Studies
- Palliative Care and End-of-Life Issues
- Thin-Film Transistor Technologies
- Full-Duplex Wireless Communications
- Advanced Wireless Communication Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Blood disorders and treatments
- Cancer Treatment and Pharmacology
- Wireless Communication Networks Research
- Radiopharmaceutical Chemistry and Applications
- Transition Metal Oxide Nanomaterials
- Advanced Power Amplifier Design
- Electronic and Structural Properties of Oxides
- Osteoarthritis Treatment and Mechanisms
- ZnO doping and properties
- Orthopedic Infections and Treatments
- Acoustic Wave Resonator Technologies
- HER2/EGFR in Cancer Research
- Neuropeptides and Animal Physiology
Samsung (South Korea)
2006-2023
IBM (United States)
2009
Semiconductor Research Corporation
2007
Infineon Technologies (Canada)
2005-2007
Korea Advanced Institute of Science and Technology
2002
Increasing demands on high-data-rate and low-latency cellular communications are accelerating the developments of millimeter-wave (mm-wave) systems for 5G NR in 28 39GHz bands. In order to provide communication worldwide, high-performance low-cost RF chipset solutions required. Recently, mm-wave CMOS/BiCMOS phased-array transceivers 28GHz band have been reported [1]–[5]. However, there very limited reports [6], which is one main frequency bands US, Canada, China other countries. this paper,...
This paper reports a cutting-edge 65nm CMOS technology featuring high performance and low power devices for both general applications. Utilizing plasma nitrided gate oxide, off-set slim spacers, advanced co-implants, NiSi temperature MOL process, well designed NMOSFET PMOSFET achieved significant improvement from the previous generation, especially has demonstrated an astonishing 35 % enhancement node.
This paper reports on new concept consisting of all-oxidebased device component for future high density non-volatile data storage with stackable structure. We demonstrate a GaInZnO (GIZO) thin film transistors (TFTs) integrated 1D (CuO/InZnO)-1R (NiO) (one diode-one resistor) structure oxide memory node element. RRAM (Resistance Random Access Memory) has provided advantages in fabrication which have made these works possible [1, 2]. Therefore we also suggest methods and techniques improving...
This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF elements a single-chip achieve high-level of TX EIRP RX sensitivity. Several approaches gain, P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT</inf> , stability, reliability linearity enhancement techniques are applied...
An aggressively scaled high performance 45nm bulk CMOS technology targeting graphic, gaming, wireless and digital home applications is presented. Through innovative utilization integration of advanced stressors, thermal processes other elements, at design ground rules, core NFET PFET realized world leading drive currents 1150 785 uA/um 100 nA/um off current 1V, respectively. In addition to the transistors, an ultra low-k back-end dielectric (k=2.4) significantly lowers wiring delay. this...
For the multi-gigabit NAND flash memory, SONOS-type FinFET device with p+ gate and high-k blocking dielectric has been integrated both on cell array GSL/SSL for first time. The advantages of structure application have theoretically experimentally demonstrated, results show that 85 % improved on-cell current is achievable using device. enhanced programming retention characteristics also presented, modeled by potential changes fully-depleted body sub-40 nm ultra-narrow fin
SB16 is a biosimilar to reference denosumab (DEN). This study assessed pharmacokinetic (PK) equivalence and evaluated pharmacodynamic (PD), safety, tolerability, immunogenicity between SB16, European Union-sourced DEN (EU-DEN), United States-sourced (US-DEN).In this double-blind, parallel group, single-dose study, healthy male subjects were randomized 1:1:1 receive single 60 mg dose of either EU-DEN, or US-DEN subcutaneously. PK, PD, for 197 days. Primary PK endpoints area under the...
We proposed and successfully demonstrate multi-functional Si-on-ONO (SOONO) MOSFETs. As a high performance transistor embedded 2-bit flash memory, they show the reasonable characteristics. SOONO MOSFETs act as ultra thin body with self-limited shallow junction, resulting in good SCE immunity driving currents, 737μA/μm for nMOS 330μA/μm pMOS at |V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> | =...
This paper presents performance evaluation of high-κ/metal gate (HK/MG) process on an industry standard 45nm low power microprocessor built bulk substrate. CMOS devices with HK/MG demonstrate 50% improvement in NFET and 65% PFET drive current when compared Poly/SiON devices. No additional stress elements were used for this gain. The critical path circuits show dynamic gain over at same supply voltage 36% lower energy performance. Superior SRAM minimum operating characteristics are achieved...
In this paper, we suggest a new dynamic channel assignment scheme with two types of allocation strategies, and perform an analysis on the handoff probabilities calls. Our is compared other existing schemes in terms three blocking probabilities-new call probability, handover network probability. Simulation results show that our significantly reduces those over schemes. Furthermore, has much smaller number reallocations than