A5103133677- GaN-based semiconductor devices and materials
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Balance, Gait, and Falls Prevention
- Prosthetics and Rehabilitation Robotics
- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Optical Network Technologies
- Sports Performance and Training
- Lower Extremity Biomechanics and Pathologies
- Direction-of-Arrival Estimation Techniques
- Advanced SAR Imaging Techniques
- Advanced Fiber Laser Technologies
- Metal and Thin Film Mechanics
- Radar Systems and Signal Processing
- Evacuation and Crowd Dynamics
- Muscle activation and electromyography studies
- Stroke Rehabilitation and Recovery
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Foot and Ankle Surgery
- Diabetic Foot Ulcer Assessment and Management
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
Samsung (South Korea)
2002-2018
Samsung Medical Center
2018
Yonsei University
2005-2009
As the most feasible solution beyond FinFET technology, a gate-all-around Multi-Bridge-Channel MOSFET (MBCFET) technology is successfully demonstrated including fully working high density SRAM. MBCFETs are fabricated using 90% or more of processes with only few revised masks, allowing easy migration from process. Not on-target but also multiple Vt achieved in challengingly limited vertical spacing between channels. Also, reliability shown to be comparable that FinFETs. Three representative...
This paper reports on new concept consisting of all-oxidebased device component for future high density non-volatile data storage with stackable structure. We demonstrate a GaInZnO (GIZO) thin film transistors (TFTs) integrated 1D (CuO/InZnO)-1R (NiO) (one diode-one resistor) structure oxide memory node element. RRAM (Resistance Random Access Memory) has provided advantages in fabrication which have made these works possible [1, 2]. Therefore we also suggest methods and techniques improving...
We demonstrate GaN-based high-power single transverse-mode laser diodes (LDs) emitting at 405 nm. LD structures are designed to exhibit a high level of catastrophic optical damage and small beam divergence angle. By the control refractive index profiles, we achieved vertical angle as low 17.5/spl deg/ maximum output power 470 mW under continuous-wave operation condition. In addition, nearly fundamental is demonstrated up 500-mW pulsed by far-field investigation.
There are numerous computational programs available for fire influence analysis; however, currently, there is no program in Korea specifically designed to aid Authority Having Jurisdiction (AHJ) protection inspections, taking into account promptness and portability. Hence, this study aims develop a mobile application analysis, prioritizing portability improve the quality of inspections provide inspectors with insight dynamics. This outlines specific development directions as part conceptual...
In this study, a feasibility study was performed for biomechanical applications of foot-ankle roll-over characteristics in different heel height shoes during walking. Five nondisabled female volunteers were participated gait experiments, wearing four pairs with heights. Roll-over shapes the systems obtained using trajectories ankle, knee and center pressure between initial contact (IC) opposite contact(OIC). Results showed that moved downwards higher but characteristics, represented by an...
Uncooled ASE-injected WBG-LDs in the S-band are first developed as downstream sources WDM-PONs. The single WBG-LD covers 100 GHz-spaced 32 channels and allows BERs of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> with +2 dBm launching power over 25 km
GaN-based laser diodes for 405 nm high-power applications are demonstrated. By decreasing the Al concentration of n-cladding layers, vertical divergence angle was reduced to <18/spl deg/ and average COD level increase >300 mW.
In a general radar operation environment, there exist various kinds of undesired signals which include ground and weather clutter, interferences, background noise, etc.. These noise should be eliminated for the detection weak target signals. For optimal detection, are two different methods. One is to maximize SNR (signal ratio) other probability detection. shown same if assumption Gaussian density valid. However, covariance matrix known or estimated previously apply these The SMI (sample...