Hyeonmuk Kang

ORCID: 0000-0003-0174-555X
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Research Areas
  • Semiconductor materials and devices
  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Advanced Battery Technologies Research
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Semiconductor Devices and Circuit Design
  • Machine Learning in Materials Science
  • Copper Interconnects and Reliability
  • Electron and X-Ray Spectroscopy Techniques
  • Semiconductor materials and interfaces
  • Advanced Memory and Neural Computing
  • Silicon Carbide Semiconductor Technologies
  • Ferroelectric and Piezoelectric Materials
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Surface Polishing Techniques
  • Acoustic Wave Resonator Technologies
  • Plasma Diagnostics and Applications
  • Supercapacitor Materials and Fabrication
  • Conducting polymers and applications
  • Advanced Optical Network Technologies
  • Organic Light-Emitting Diodes Research
  • Extraction and Separation Processes
  • Silicon Nanostructures and Photoluminescence
  • Technology and Data Analysis
  • Phase-change materials and chalcogenides

Korea Advanced Institute of Science and Technology
2020-2024

Samsung (South Korea)
1996-2020

Samsung (United States)
2008

As the most feasible solution beyond FinFET technology, a gate-all-around Multi-Bridge-Channel MOSFET (MBCFET) technology is successfully demonstrated including fully working high density SRAM. MBCFETs are fabricated using 90% or more of processes with only few revised masks, allowing easy migration from process. Not on-target but also multiple Vt achieved in challengingly limited vertical spacing between channels. Also, reliability shown to be comparable that FinFETs. Three representative...

10.1109/iedm.2018.8614629 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2018-12-01

Vertical ReRAM (VRRAM) has been realized with modification of NAND (VNAND) process and architecture as a cost-effective extensible technology for future mass data storage. Dedicated ALD/CVD deposition wet etching processes were developed to reproduce planar properties in VRRAM structure. Multi-stack cell layers fabricated at the same time using ALD TaOx/barrier layer/CVD TiN stacks. Oxidation control without intermixing found very critical vertical process.

10.1109/iedm.2011.6131654 article EN International Electron Devices Meeting 2011-12-01

Optimizing synthesis parameters is crucial in fabricating an ideal cathode material; however, the design space too vast to be fully explored using Edisonian approach. Here, by clustering eleven domain-expert-derived-descriptors from literature, we use inverse surrogate model build up experimental parameters-property relationship. Without struggling with trial-and-error method, enables variables prediction that serves as effective strategy for retrosynthesis. More importantly, not only did...

10.1016/j.nanoen.2022.107214 article EN cc-by Nano Energy 2022-04-01

Despite their low redox potential and high specific capacity, lithium (Li) metal anodes pose stability safety issues, especially in commercial carbonate-based electrolytes, due to dendritic growth of Li formation unstable solid-electrolyte interphase (SEI). To address these, we adopted AgNO3 as an electrolyte additive electrolyte. Given that has solubility carbonate developed a porous film made silver nitrate (AgNO3)-containing polyacrylonitrile (PAN) nanofibers (AgNO3/PAN) enabling the...

10.1016/j.cej.2024.149510 article EN cc-by-nc-nd Chemical Engineering Journal 2024-02-10

Multiscale and multimodal imaging of material structures properties provides solid ground on which materials theory design can flourish. Recently, KAIST announced 10 flagship research fields, include Materials Revolution: Molecular Modeling, Imaging, Informatics Integration (M3I3). The M3I3 initiative aims to reduce the time for discovery, development based elucidating multiscale processing–structure–property relationship hierarchy, are be quantified understood through a combination machine...

10.1021/acsnano.1c00211 article EN cc-by-nc-nd ACS Nano 2021-02-12

Abstract Li‐excess layered cathode (LLC) materials have a high theoretical specific capacity of 250 mAh g −1 induced by transition metal (cationic) and oxygen (anionic) redox activity. Especially, the reaction related to activation Li 2 MnO 3 domain plays crucial role providing capacity. However, it also induces an irreversible release accelerates layered‐to‐spinel phase transformation fading. Here, is shown that surface doping vanadium (V 5+ ) cations into LLC material suppresses both...

10.1002/advs.202003013 article EN cc-by Advanced Science 2021-01-29

Lithium sulfur (Li–S) batteries represent a promising future battery technology. However, the low electrical conductivity of solid-state species (S, Li2S2, and Li2S) polysulfide shuttle effect deteriorate their practical capacity cycling retention. Herein, we present an interlayer composed magnesium oxide (MgO) nanoparticles carbon matrix for Li–S batteries. In composite, MgO can capture dissolved polysulfides that diffuse to along surface further reduction reactions. As novel precursor...

10.1021/acssuschemeng.2c05064 article EN cc-by-nc-nd ACS Sustainable Chemistry & Engineering 2023-01-19

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10.2139/ssrn.5087265 preprint EN 2025-01-01

This paper describes SRAM scaling for 32 nm low power bulk technology, enabled by high-K metal gate process, down to 0.149 mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 0.124 . access stability write margin are significantly improved through a 50% Vt mismatch reduction, thanks HK-MG T <sub xmlns:xlink="http://www.w3.org/1999/xlink">inv</sub> scaling. Cell read current is increased 70% over Poly-SiON process. Ultra dense cell...

10.1109/iedm.2008.4796660 article EN 2008-12-01

Al/sub 2/O/sub 3/ (EOT=22.7 /spl Aring/) gate dielectric layer formed by Atomic Layer Deposition (ALD) process have been characterized for sub-100 nm CMOS devices. The leakage current was 3 orders of magnitude lower than that SiO/sub 2/ and the hysteresis C-V curve not observed. However, negative fixed charge induced flat band voltage (Vfb) shift degraded channel mobility MOS transistor. Vfb reduced improved applying P+ BF/sub implantation. It is suggested phosphorous diffused from...

10.1109/iedm.2000.904402 article EN 2002-11-11

We have developed a novel cell structure of PRAM with metal interlayer. This has been proposed to solve the over-programming fail. examined cause by simulation phase transition chalcogenide and successfully demonstrated reliable operation this in writing current level, crystallization speed, endurance. It can be explained model which interlayer is local heat sink top GST layer thermal insulator.

10.1109/iedm.2003.1269424 article EN 2004-03-22

The thermal battery, a key source for powering defensive power systems, employs Li alloy-based anodes. However, the alloying increases reduction potential of which lowers overall working voltage and energy output. To overcome these issues, alloy must be replaced with pure Li. Utilizing requires structure that can hold liquefied because temperature battery exceeds melting point leak out anode, causing short-circuit. A Li-Fe electrode (LiFE) in Fe powder holds has been developed. In LiFE,...

10.1039/d1ra04588a article EN cc-by-nc RSC Advances 2022-01-01

Local pattern charging during plasma etching of a dielectric material is investigated by means two-dimensional Monte-Carlo simulation. Detailed surface charge and potential distributions are presented analysed. The differential shown to induce an electric field which strong enough cause considerable ion energy reduction etched profile distortion.

10.1049/el:19960585 article EN Electronics Letters 1996-05-09

We have found that the defect generation which is induced by mechanical stress during densification, depends on ratio of trench filling material composed TEOS-O/sub 3/ based CVD oxide with tensile and plasma enhanced compressive stress. The lower as-deposited is, maximum densification is. This level proportional to density generated in fabricating MOSFETs Shallow Trench Isolation (STI). In order achieve devices without a defect, it important minimize optimizing oxides.

10.1109/iedm.1997.650472 article EN 2002-11-22

A BF/sub 3/ Plasma doping (PLAD) process has been utilized in source/drain/gate and shallow S/D extension for high performance 0.18 /spl mu/m pMOSFET. Gate oxide reliability, drain current, transconductance of the pMOSFET with PLAD are remarkably improved compared to those 2/ ion implanted devices. Cobalt salicide formation is also compatible plasma doped junction.

10.1109/iedm.1998.746439 article EN 2002-11-27

Si, used to make high-capacity anodes for Li-ion batteries, undergoes unstable electrolyte decomposition that limits its wider commercial use. The decomposed deposits on the Si surface as an insulating solid interphase (SEI). electrode is known grow a porous and thick SEI hinders e– Li+ diffusion, resulting in rapid capacity fade. Fluoroethylene carbonate (FEC), additive, alleviate issue by promoting polymerization cross-linking, leading denser thinner SEI. Nonetheless, current incorporate...

10.1021/acssuschemeng.2c02337 article EN ACS Sustainable Chemistry & Engineering 2022-08-05

LiNixMnyCozO2 (NMC) is one of the most popular cathode materials for lithium-ion batteries. Li-rich NMC emerging as a potential candidate next-generation cathodes owing to its exceptional efficiency. The development high-performance requires demonstration structure–property relationships inherent in these complex, multicomponent systems. Herein, we construct map samples using convolutional neural networks (CNN). Our CNN models categorize crystal structure classification approach and predict...

10.2139/ssrn.4844067 preprint EN 2024-01-01

Lithium metal batteries (LMBs) are regarded as an ideal candidate for next-generation to meet the increasing demand high energy density batteries. Due theoretical capacity (3860 mAh g -1 ) and low electrochemical redox potential (- 3.04 V vs Standard Hydrogen Electrode (SHE)) of lithium anodes, can achieve a density. However, poor compatibility conventional carbonate electrolytes with anodes has limited commercialization LMBs. The unstable solid-electrolyte interphase (SEI) generated from...

10.1149/ma2024-02674454mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2024-11-22

In the continued evolution toward high-performance lithium-ion batteries, cobalt has presented itself as a major obstacle due to its price, toxicity and supply. Thus, Co-Free, Li-rich Layered Oxide Cathodes (CF-LLC) have become promising cathode for their exclusion of high theoretical capacity. Nevertheless, CF-LLC suffers from issues such sluggish kinetics, lowered early capacity voltage fade structural degradation. This is increase in cation mixing resulting absence cation-ordering cobalt....

10.1149/ma2024-025593mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2024-11-22

As the demand for energy storage continues to rise, there is a growing need research focused on developing high-energy-density and stable batteries. Among various anode materials lithium batteries, metal stands out as an ideal candidate due its low redox potential high specific capacity. Consequently, in pursuit of post-lithium ion batteries with enhanced density, utilization inevitable. However, stability safety anodes are compromised by issues such dendritic growth. When comes into contact...

10.1149/ma2024-0271036mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2024-11-22
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