High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge crystals directly formed by nucleation-controlled gold-induced-crystallization (GIC) examined, and compared with those obtained aluminum-induced-crystallization (AIC). The show p-type conductions. Here, hole concentrations 2.2 × 1017 5.8 1020 cm−3 for GIC-Ge AIC-Ge, respectively, which explained the basis...

Selective formation of Ge(100) and (111) on amorphous-insulator at low-temperatures (∼250 °C) is realized through gold-induced-crystallization using a-Ge/Au/SiO2 stacked-structures by combining interface-energy-modulation substrates. Introduction thin-Al2O3 layers (∼7 nm thickness) a-Ge/Au interfaces enables large-grain (≥20 μm) Ge(111) formation, which speculated to be due suppression random bulk-nucleation domination (111)-oriented interface-nucleation SiO2. To examine this speculation,...

We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than softening of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al2O3 barrier amorphous-Ge/Au multilayers established. From Raman measurements, we can judge that crystallinity obtained Ge higher those grown by aluminum-induced-crystallization methods....

Zinc oxide thin films were grown on sapphire substrates by metal organic chemical vapor deposition technique. Single crystal with flat and smooth surfaces reproducibly obtained, application of sample bias O2 inductively coupled plasma (ICP). At the growth condition 650°C, 400W ICP power, −94V voltage O∕Zn ratio 75, full width at half maximum values room temperature photoluminescence high-resolution x-ray diffraction measured to be 126meV 269arcsec, respectively. It was proposed that provided...

Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250–350°C) amorphous (a-Si)/Au stacked structures formed insulators, the positions Si/Au layers are inverted, and Au/poly-Si obtained. This growth technique (∼250°C) should be very useful obtain flexible substrates, which employed as template for high quality Si1–xGex (x: 0–1) realize high-speed thin-film transistors...

Orientation-controlled large-grain Ge crystals grown on plastic substrates (softening temperature: ∼300 °C) are desired to realize advanced flexible electronics, where various functional devices integrated substrates. To achieve this, gold-induced crystallization (annealing 250 using a-Ge/Au stacked structures is developed substrates, thin-Al 2 O 3 layers (thickness: ∼7 nm) introduced at interfaces. Interestingly, (111)-oriented nucleation the Au/plastic interface dominates over random bulk...

Abstract Orientation-controlled large-grain (≥10 µm) crystal, i.e., quasi-single Ge-rich (≥50%) SiGe on insulator grown at low temperatures (≤300 °C) are desired for realization of high-performance flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. This enables formation (111)-oriented Si 1− x Ge ( ≥ 0.5) crystals insulating substrates (300 °C). The surface layers have uniform lateral composition profiles. By...

This letter presents a neural stimulation IC for the 32-channel cochlear implant system. A zoom current DAC (I-DAC), whose full range is reconfigured to fit interval between comfort (C) and threshold (T) levels, introduced high-resolution strength control provide high-fidelity sound perception with minimal hardware overhead. The also includes an in-situ recording function. effectiveness of auditory nerve validated by monitoring electrically evoked compound action potential (ECAP) in-vivo...

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current 50 mA for 30 min. measured Raman spectra and electron backscattering diffraction (EBSD) images show that as-deposited Ge film amorphous. deposited achieved thermal annealing (RTA) at 980 °C 1 s. EBSD confirm orientations annealed are similar to Si...

In recent years, wireless power transfer (WPT) technology is becoming an increasingly important part of the various applications because its safety. Especially, medical implant devices such as a cochlear are one typical application WPT technology. Because individual body differences, however, coupling coefficient system can be changed. Therefore, coefficient-insensitivity very design issue.In this paper, we propose stagger tuning method system. The proposed makes stable at link gain...

In dye-sensitized solar cells (DSSCs), the back transfer of photo-generated electrons from FTO glass to triiodide ions in an electrolyte is important loss mechanism, which leads low cell efficiency. Recently, this electron was greatly suppressed by introduction a compact blocking layer, prepared treatment solution. present work, more detailed treated surface conditions on substrate were investigated and DSSC performances correlated with morphology as well dark current behavior.

The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth electrodeposited Ge Si (100) substrate were investigated. Here, a process was performed at 1000, 1050 1100 °C for 1 s. All annealed samples show single crystalline structure orientation. A significant appearance Si-Ge vibration mode peak ~400 cm-1 confirms the existence intermixing due to out-diffusion into region. On process, melts reaches thermal equilibrium short time. Ge/Si...

Formation of position-controlled large-grain (≥10 μm) Ge crystals on insulator is realized at low-temperature (300°C) by gold-induced-crystallization using a-Ge/Au stacked structures. By introduction diffusion barriers, i.e., thin-Al2O3 layers (2 nm thickness), having open-windows (3–20 μm diameter) into the interfaces, are selectively grown from open windows. For with diameter 20 μm, areas consist several (111) grains. This attributed to that nuclei acting as seed generated around...

Wireless power transfer (WPT) system is an area where many studies have been conducted for electric vehicles (EV s) charging. Loosely coupled transformer with a wide range of coupling coefficient <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(k)$</tex> value main factor WPT system. Coupling variation which highly sensitive to the coil misalignment causes change in overall performance. Therefore, this paper introduces design method insensitive...

The gold-induced crystallization technique has been investigated to achieve poly-SiGe films on insulators at low temperatures (300ºC). By annealing of the amorphous SiGe (Ge concentration: 0-100%)/Au stacked structures formed insulating substrates, positions and Au layers are inverted, Au/SiGe obtained. Crystallization in inverted samples is confirmed by Raman scattering spectroscopy analysis. Moreover, measurements reveal that Ge fractions crystallized almost same as those initial layers....

Proton exchange membrane (PEM) water electrolysis (WE) and fuel cells (FCs) stand out as promising technologies for hydrogen generation utilization, leveraging renewable sustainable energy sources. A pivotal element in both PEMFC PEMWE is the membrane-electrode assembly (MEA), comprising catalyst layers (CLs) a membrane. These CLs facilitate electrochemical reactions at anode cathode, crucial oxygen reduction reaction (ORR) evolution (HER) PEMFC. The ink consists of electrocatalyst, ionomer...

According to the WHO report, hearing-impaired population in world is about 470 million 2019, and 15 people could hear sounds with cochlear implants (CIs). In clinical practices, who have a hearing loss greater than 90dB are guided use CIs instead of aids restore hearing. The CI delivers electrical stimulation auditory nerves through an electrode array which surgically inserted cochlea. multiple electrodes placed at different locations cochlea deliver pulses strengths frequencies from each...

The gold-induced crystallization technique has been investigated to achieve poly-Si films on insulators at low temperatures (≤250°C). By annealing (~250°C) the amorphous Si (a-Si)/Au stacked structures formed insulating substrates, positions of Si/Au layers are inverted, and Au/poly-Si obtained. On other hand, by (>;400°C) structures, mixed c-Si Au These growth phenomena explained basis eutectic reaction. This layer-exchange low-temperatures is very useful obtain flexible which essential...