A5102236849- solar cell performance optimization
- Chalcogenide Semiconductor Thin Films
- X-ray Diffraction in Crystallography
- Semiconductor Quantum Structures and Devices
- Crystallization and Solubility Studies
- Nanowire Synthesis and Applications
- Geology and Paleoclimatology Research
- Thermal Radiation and Cooling Technologies
- Pleistocene-Era Hominins and Archaeology
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
- Karst Systems and Hydrogeology
- Geological formations and processes
- Antenna Design and Analysis
- Semiconductor materials and interfaces
- GaN-based semiconductor devices and materials
- Atmospheric Ozone and Climate
- Ultra-Wideband Communications Technology
- Wireless Body Area Networks
- Perovskite Materials and Applications
- Gyrotron and Vacuum Electronics Research
- Tree-ring climate responses
- Groundwater and Isotope Geochemistry
- Advanced biosensing and bioanalysis techniques
- Molecular Communication and Nanonetworks
National University of Defense Technology
2024
University of Science and Technology of China
2023
Suzhou Institute of Nano-tech and Nano-bionics
2013-2021
Chinese Academy of Sciences
1999-2021
Xi'an University of Technology
2013
Institute of Geology and Geophysics
1999-2002
The efficiency calibration of InGaAs thermophotovoltaic (TPV) cells with band gap energies 0.6 and 0.74 eV under blackbody radiation is performed on the basis combination measurement theoretical calculation. Efficiencies 19.1% for cell 16.4% are obtained at temperature 1323 K. notable differences in reverse saturation current density ideality factors standard solar spectrum illumination indicate significant effect detailed understanding devices.
Stalagmite laminae provide a high-resolution geological record of climate change. In this paper, moving spectral analysis is used to analyse stalagmite lamina thickness study climatic variability. It was found that the dominant cycles sequence are 2, 3.3, 5–6, 10–12, 14–18, 133 and 194 years. Some same as modern indices, such QBO (Quasi Biennial Oscillation) 2 years, QTO Triple-year cycle about 3.5 QFO Five-year 5–6 years QEO Eleven-year 11 also there different in time periods. Usually,...
Abstract An InGaP/GaAs tandem cell on a GaAs substrate and an InGaAsP/InGaAs InP were grown separately by all-solid-state molecular beam epitaxy. A room-temperature direct wafer-bonding technique was used to integrate these subcells into InGaP/GaAs//InGaAsP/InGaAs wafer-bonded solar cell, which resulted in abrupt interface with low resistance high optical transmission. The current-matching design for the base layer thickness of each investigated. resulting efficiency four-junction 42.0% at...
The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal in III–V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm -GaAs layer formed, which is benefiting from a high carrier concentration terrilium-doped layer, up to 2 . good device performance with observed. This result indicates great potential films future fabrication larger area flexible cell.
In the case of fabrication flexible solar cells based on inverted metamorphic multijunction (IMM) structure, conventional high-temperature annealing will result in thin-film epitaxial layer warp or even crack, which could seriously affect yield cells. The poor device processing compatibility arises from large difference thermal expansion coefficients between ultrathin and substrate. this work, we developed PdGe electrode to achieve specific contact resistivity <inline-formula...
An In 0.68 Ga 0.32 As thermophotovoltaic (TPV) cell on a compositionally nonmonotonically graded InAsP buffer with band gap energy of 0.60 eV grown by metal–organic chemical vapor deposition (MOCVD) has been fabricated. The performance the TPV device was greatly improved optimized material growth, use an absorption layer suitable width, and appropriate TiO 2 /SiO antireflective coating design. Under standard AM1.5G spectra, open circuit voltage ( V oc ) increases from 0.19 to 0.23 V,...
3 MeV and 10 proton irradiated InGaAsP single junction solar cell have been investigated. Proton fluences are calculated by MUSALISS software based on the equivalent displacement damage method. SRIM simulation is used to analyze irradiation damage. The result shows that external quantum efficiency (EQE) electrical parameters of degraded both irradiation. degradation EQE larger in longer wavelength region because higher probability carrier lifetime reduction base cell, produced more than...
QYZDB-SSW-JSC014
We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality was deposited by electron beam evaporation resistivity of 2.32 × 10−4 Ω·cm an averaged transmittance 92.8% in visible light region. The circular transmission line model (c-TLM) method used to evaluate compare properties ITO/metal ITO/semiconductor ohmic contacts. lowest ITO/Ni is 2.81 10−6 Ω·cm2, while that ITO/n-GaAs 7 10−5 Ω·cm2. This best between n-GaAs ever reported. These results suggest...
Abstract Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the cell, while efficiencies 16.4 and 12.3% reached top InGaAsP bottom InGaAs cells, respectively. The effects buffer layer back-surface field performance discussed. High device achieved in case a low concentration oxygen weak recombination when buffers layers used,
The effect of rapid thermal annealing (RTA) on the optical properties InGaAsP with band-gap energy around 1.05 eV for quadruple-junction solar cells grown by molecular beam epitaxy (MBE) has been investigated. photoluminescence (PL) spectrum film annealed at 800 °C strong integrated intensity and low activation band-tail states. time-resolved PL measurement shows that decay time as-grown one are 11.6 ns 3.0 10 K, respectively. An S-shape as a function temperature is observed explained...