A5020933599- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Optical Network Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and interfaces
- Advanced Electrical Measurement Techniques
- Physics of Superconductivity and Magnetism
- Tunneling and Rock Mechanics
- Blind Source Separation Techniques
- Advanced Chemical Physics Studies
- Copper Interconnects and Reliability
- Geotechnical and Geomechanical Engineering
- Advancements in Photolithography Techniques
- Silicon and Solar Cell Technologies
- Thermodynamic and Structural Properties of Metals and Alloys
- Neurotransmitter Receptor Influence on Behavior
- Engineering Diagnostics and Reliability
- Adhesion, Friction, and Surface Interactions
- Tryptophan and brain disorders
- Greenhouse Technology and Climate Control
- Neurogenesis and neuroplasticity mechanisms
Hiroshima University
1972-2024
Sony (Taiwan)
2006
Sony Corporation (United States)
2006
Kyushu University
2005-2006
Komatsu University
2005
Panasonic (Japan)
2003
NTT Basic Research Laboratories
1985-2002
NEC (Japan)
1992
NTT (Japan)
1961-1991
NTT (United States)
1986
Tumor necrosis factor receptor-associated 3 (TRAF3) is an anti-inflammatory molecule that negatively regulates the non-canonical nuclear factor-κB pathway. Although TRAF3 haploinsufficiency (TRAF3 HI) can influence innate and adaptive immune cells, its effect on inflammatory bowel disease (IBD) development remains unclear. Here, we report first case of severe early-onset IBD with a novel variant leading to HI, successfully treated ustekinumab. A 6-year-old girl recurrent parotitis, otitis...
The 3.5-Gb/s, 4-ch transmitter and receiver LSI's described here include a 5-to-1 multiplexer, 1-to-5 demultiplexer, analog PLL circuits that can generate high-speed clock (3.5 GHz) retimed data. chips make it possible to connect twenty pairs of 700-Mb/s electrical ports (14-Gb/s throughput) without any external elements even for the PLL. Both LSI are 4.5-mm-square fabricated by 40-GHz 0.5-/spl mu/m Si bipolar process. dissipates 2.5 W, 3.6 W. have -4.5- -2-V supply voltages.
CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN applied to nFETs pFETs, respectively. TiN/HfO2 epitaxial SiGe source/drains successfully integrated for the first time. As a result, drive currents 1050 710 uA/um at Vdd=1 V, Ioff= 100 nA/um Tinv=1.6 nm obtained pFETs. The further integration pFETs on (110) substrates contributed higher current 830 uA/um. These performances realized under low...
We present the state-of-the-art 45nm high performance bulk logic platform technology which utilizes, for first time in industry, ultra NA (1.07) immersion lithography to realize highly down-scaled chip size. Fully renovated MOSFET integration scheme features reversed extension and SD diffusion formation is established meet Vt roll-off requirement with excellent transistor of Ion=1100muA/mum nFET Ion=700muA/mum pFET at Ioff=100nA/mum. Also, we achieved BEOL reliability manufacturability by...
A complementary logic circuit employing heterostructure MISFET's is shown to have a larger swing and noise margin than an E/D MESFET circuit. The calculated using new gate current model that derived by taking into account the small surface potential dependence on voltage at heterointerface. simulation indicates that, for multi-input gates, NAND configuration superior NOR from viewpoints of switching speed. normalized high- low-level margins are comparatively balanced (34 49 percent)...
A new complementary circuit employing high-mobility two-dimensional electron and hole gases (2DEG 2DHG)induced at the AIGaAs/GaAs heterointerface has been suc-cessfully fabricated on an n+-Ge/undoped AlGaAs/undopedGaAs heterostructure grown by molecular beam epitaxy. Thecircuit includes n+-Ge/WSi;c-gate n-channel FET aWSix-gate p-channel self-aligned implan-tation technology. 15-stage ring oscillator shows aminimum delay time of 125 ps 300 K 100 83 K.
This paper describes optical transmitter and receiver modules for package-to-package interconnection in broadband switching networks such as an asynchronous transfer mode switch fabric. These modules, which include the multiplexer demultiplexer, can reduce number of connections problem skew between links. Five-channel were fabricated demonstrated at 2.8 Gbit/s with a power dissipation 4.5 W per channel. Moreover, temperature-insensitive was successfully by driving laser constant bias current...
This paper describes 2.8-Gbit/s, 5-channel optical transmitter and receiver modules for board-to-board interconnection in asynchronous transfer mode (ATM) switching systems. These are constructed of electrical submodules. The submodule mainly consists a multimode-fiber array an device array. is by multichip module technique with GaAs IC's multilayer ceramic substrates. advantage the fabric that submodules independently assembled after testing. Error-free 250-m transmission successfully...
Domain wall velocities are measured for 2700 Å and 2200 thick Permalloy films of several coercive forces. The velocity-drive field curves characterized by two mobilities, as often reported. It is found that these low- high-field mobilities strongly affected force the films. low-field mobility nearly constant low-coercive-force films, decreases rapidly with increasing force. inversely proportional to results suggest nonlinear dependence velocity on drive would disappear in a...
Domain wall motion in Permalloy films was experimentally studied pulsed magnetic fields of various pulselength, and it found that the Bloch-wall displacement is not proportional to pulselength nanoseconds region. The results suggest instantaneous velocity constant for high field, fast just after field starts damped rapidly then relaxes steady slow motion. This discussed from clamping-free domain theory.
2.8-Gbit/s, 3-channel optical transmitter and receiver modules have been developed for board-to-board interconnection in Asynchronous Transfer Mode (ATM) switching systems. These are constructed with electrical submodules. The submodule mainly consists of a multimode-fiber array an device array. is by using multichip module technology GaAs ICs multilayer ceramic substrates. submodules independently assembled after they tested. Over wide range temperatures, error-free 250-m transmission...
The high-speed potential of n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Ge gate AlGaAs/GaAs MISFETs has been demonstrated by fabricating a divide-by-four static frequency divider. transconductance MISFET with 0.6 µm length was 470 mS/mm. small V <inf xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> standard deviation 13 mV throughout the 2-inch wafer confirms principal advantage MISFET, namely high uniformity. divider circuit...
Submicrometer n/sup +/-Ge gate AlGaAs/GaAs MISFETs have been developed by designing a fabrication process for the +/-implanted region. The short-channel effect was sufficiently suppressed lowering ion-implantation energy down to 50 keV achieve standard deviation of threshold voltage as small 13 mV 0.5- mu m-gate FETs in 2-in-diameter wafer. source resistance reduced increasing annealing temperature 850 degrees C obtain transconductance 500 mS/mm FET. Even after at such high temperature,...
We developed a less layout-dependent epitaxially grown SiGe (eSiGe) source/drain (S/D) technique for pFET. found that the effective stressor region of eSiGe existed only near channel and volume effect was small. On basis this mechanism, new recess RIE epitaxial growth technology were developed, so gate-pitch dependence, S/D length dependence width extremely reduced. In addition, we succeeded in increasing drive current by improving structure impurity profile. also obtained high 750 μA/μm at...
Hironori Kobayashi, Manabu Fuchikami, Kenichi Oga, Tatsuhiro Miyagi, Sho Fujita, Satoshi Okada, Yasumasa Okamoto, Shigeru Morinobu. Clin Psychopharmacol Neurosci -0001;0:. https://doi.org/10.9758/cpn.23.1140
A millimeter-wave radio access system has a number of features that makes it appealing as one approach to broadband communications. However, for millimeterwave come into wide use, must be miniaturized and the associated costs reduced. We have succeeded in realizing compact 156 Mbps transceiver with 38 GHz band optimizing RF architecture. also adopted newly developed three-dimensional laminated MCMs using low cost plastic materials. It was confirmed initial experiments this wireless LAN...
Since the precise mechanisms of posttraumatic stress disorder (PTSD) remain unknown, effective treatment interventions have not yet been established. Impaired extinction fear memory (EFM) is one core symptoms PTSD and associated with stress-induced epigenetic change in gene expression.
The n+ self-aligned-gate technology for high-performance AlGaAs/GaAs heterostructure FETs employing rapid lamp annealing have been studied. large transconductance of 330 mS/mm at 300 K and 530 83 was obtained the 0.7 μm gate length device, by reducing source resistance to 0.6 Ωmm. minimum delay time 18.7 ps with a power dissipation 9.1 mW K. standard deviation as small 1.1 fixed bias 2.5 V.
The small-signal characteristics have been clarified by S-parameter measurements and equivalent circuit modeling. A large intrinsic transconductance of 630 mS/mm a maximum cutoff frequence f/sub T/ 70 GHz achieved for MISFET with gate length 0.4 mu m. average electron drift velocity in the channel, evaluated from T/, was as high 1.7*10/sup 7/ cm/s. In obtaining an equivalent-circuit model, conductance parallel to gate-source capacitance is introduced take into account forward current...
The transmitter and receiver LSIs described here include a 5-to-1 multiplexer, 1-to-5 demultiplexer, optical interface analog phase-locked loop (PLL) circuits that generate 3.5 GHz clock retimed data. chips make it possible to connect twenty pairs of 700 Mb/s electrical ports (14 Gb/s throughput) through four fibre channels without external elements even for the PLL.
A complementary circuit employing high mobility two-dimensional electron and hole gases(2DEG 2DHG) induced at the AlGaAs/GaAs heterointerface has been successfully fabricated on an n <sup>+</sup> -Ge/undoped AlGaAs/undoped GaAs heterostructure. Transfer characteristics of a two-stage inverter show sufficiently low output levels. 15-stage ring oscillator shows minimum delay time 94 ps 300 K 64 77 K. The simulation using new gate current model that, for mul ti-input logic gate, NAND...
The optical interconnection plays an important role of realization in massively parallel computation. This is well recognized, but it not clear how the works processing. authors revisit relationships between and data Their view originally architecture-oriented, will be profitable also for device-oriented research.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>