A5030381298- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Quantum Dots Synthesis And Properties
- Semiconductor materials and interfaces
- solar cell performance optimization
- Advanced Thermoelectric Materials and Devices
- Quantum and electron transport phenomena
- Advanced Power Generation Technologies
- Advanced Thermodynamics and Statistical Mechanics
- Economic and Technological Innovation
- Topological Materials and Phenomena
- Silicon and Solar Cell Technologies
- Surface and Thin Film Phenomena
- Economic Growth and Development
- Thermal Radiation and Cooling Technologies
- Diverse Industrial Engineering Technologies
- Phase-change materials and chalcogenides
- Ocular and Laser Science Research
- Advanced Memory and Neural Computing
- Photonic and Optical Devices
- Photonic Crystals and Applications
- Graphene research and applications
- Solar Thermal and Photovoltaic Systems
- Nuclear Materials and Properties
- Thin-Film Transistor Technologies
National Technical University "Kharkiv Polytechnic Institute"
2013-2024
National Polytechnic School
2011
National Technical University of Athens
2010
O.Ya. Usikov Institute for Radiophysics and Electronics
2005
The dependencies of the thermoelectric properties n-PbTe∕p-SnTe∕n-PbTe heterostructures on SnTe quantum well width (dSnTe=0.5–6.0nm) at fixed PbTe barrier layers thicknesses were studied. It was established that thickness Seebeck coefficient, electrical conductivity, Hall charge carrier mobility, and power factor are distinctly nonmonotonic. observed effect is attributed to size quantization energy spectrum hole gas in a well.
A new approach is presented to thermoelectric phenomena, as a linear transport process of non-equilibrium charge carriers. The role carriers, well surface and bulk recombination, has shown be crucial even within the approximation. Electron hole Fermi quasi-levels that appeared in thermal field are calculated for case current flow through circuit corresponding boundary conditions obtained. It first time quasi-level one subsystems quasi-particles, can non-monotonous function coordinates....
In this work, the ability of CdTe/CdS thin-film device structures prepared by hot-wall method to detect ionizing radiation was investigated. The samples were fabricated with a structure typical CdTe/CdS-based solar cells and exhibit sensitivity even without application an external voltage. This allows such be used as low-voltage sensors. An investigation resistance structures, namely, effect irradiation high-intensity hydrogen plasma H2+ on crystal performance, carried out. It shown that...
For thin Bi films with thicknesses d=10–60 nm the dependences of Hall coefficient, Seebeck electrical conductivity, and carrier mobility on d have been obtained at room temperature. Distinct oscillations transport properties period Δd=(5±1) observed in thickness range d=25–60 attributed to quantization energy spectrum holes. It has suggested that a deep minimum kinetic coefficients d∼25 is connected manifestation electronic and/or semimetal–semiconductor transition. The experimental data are...
A nonlinear model for the electric current in a metal-intrinsic semiconductor-metal structure without potential barriers contacts is considered using drift diffusion approach. An analytical solution of continuity equations and current-voltage characteristic various recombination rates are obtained. It shown that characteristics such exhibit not only linear behavior, corresponding to Ohm's law, but may also possess properties rectifier diode. possible with saturation both forward backward...
The peculiarities of photo-electric processes in thin film CdS/CdTe solar cells (SC) with different back electrodes (Cu/Au, ITO, Cu/ITO) have been studied. As it was established by capacitance – voltage (C V) characteristics, the potential barrier heights for CdTe/Cu/Au and CdTe/ITO were 0.3 eV 2.2 eV, respectively. concentrations charge carriers near contact consisted 91020 m–3 21021 m–3, A high carrier concentration ITO caused tunnel recombination mechanism transport. investigations...
The isotherms of the lattice thermal conductivity λL for PbSe1-xTex semiconductor solid solutions (х = 0–0.045) were obtained in temperature range T (200–600) K. λL(x) dependences exhibit a general trend to decrease with increasing x, but peaks are observed near x 0.007, 0.015 and 0.0025 indicating presence phase transformations. We associated first peak percolation-type transition impurity continuum estimated critical index within framework dynamic scaling theory. second third attributed...
Purpose. Calculate the energy balance of a photo-energy installation for operation in conditions concentrated solar radiation, develop design heat exchange unit with "micro" channels. Methodology. Analytical studies using criterion equations hydrodynamics, creation and study computer models based on equations. Findings. Based analysis thermal processes, equipped "micro channels" combined photoelectric plant designed to work radiation is proposed. It shown that such creates transitional mode...
The influence of pulsed helium plasma irradiation, with a 10 s duration and surface energy load 0.2 MJ m -2 , on the elemental phase composition, morphology crystal structure thin-film heterosystems based CdS/CdTe was studied.The cadmium sulphide telluride layers were deposited by condensation via hot wall method onto glass substrate covered an FTO layer.It found that after one pulse, device remains in working condition.An increase irradiation dose leads to sputtering, formation through...
The influence of hard ultraviolet radiation on the crystalline structure, surface morphology and optical characteristics CdS CdTe semiconductor layers obtained by direct current magnetron sputtering are investigated. It was established that studied films insensitive to irradiation. structure is changed after period lattice for cadmium sulfide increases from c = 6.77(01) Å 6.78(88) Å, which may be due formation point defects defective complexes. Decrease integral FWHM peaks X-ray diffraction...