The operation and performance of complementary nanoelectromechanical (CNEM) logic gates are investigated. NEMS structures featuring dimensions 2 to 3 orders magnitude smaller than the present MEMS relays considered. Various metals benchmarked silicon as cantilever beam material. We show that CNEM inverters laterally actuated beams, 10 nm gap low density materials such Si or Al can achieve nanosecond pull-in delay sub-0.1 fJ switching energy at V <sub...

Silicon photonics holds great promise for low-cost large-scale photonic integration. In its future development, integration density will play an ever-increasing role in a way similar to that witnessed integrated circuits. Waveguides are perhaps the most ubiquitous component silicon photonics. As such, of waveguide elements is expected have crucial influence on chip. A solution high-density with minimal impact other performance metrics such as crosstalk remains vital issue many applications....

Low work function materials are critical for energy conversion and electron emission applications. Here, we demonstrate the first time that an ultralow graphene is achieved by combining electrostatic gating with a Cs/O surface coating. A simple device built from large-area monolayer grown chemical vapor deposition, transferred onto 20 nm HfO2 on Si, enabling high electric fields capacitive charge accumulation in graphene. We observed over 0.7 eV change due to as measured scanning Kelvin...

In this report, we demonstrate for the first time photonic nanocavities operating inside single biological cells. Here develop a nanobeam crystal (PC) cavity as an advanced cellular nanoprobe, active in nature, and configurable to provide multitude of actions both intracellular sensing control. Our semiconductor nanocavity probes emit photoluminescence (PL) from embedded quantum dots (QD) sustain high quality resonant modes The are shown be minimally cytotoxic cells viability studies, beams...

We report the use of an array electrically gated ~200 nm solid-state pores as nanofluidic transistors to manipulate capture and passage DNA. The devices are capable reversibly altering rate DNA by over 3 orders magnitude using sub-1 V biasing a gate electrode. This efficient gating originates from counter-balance electrophoresis electroosmosis, revealed quantitative numerical simulations. Such reversible electronically tunable biomolecular switch may be used nucleic acid delivery in fluidic...

We present the design, fabrication, and characterization of high quality factor small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) silicon carbide (SiC) grown epitaxially on a substrate. demonstrate cavity resonances across telecommunications band, with wavelengths 1,250 - 1,600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, quantum information science.

Nanoelectromechanical (NEM) relays are promising candidates for programmable routing in Field-Programmable-Gate Arrays (FPGAs). This is due to their zero leakage and potentially low on-resistance. Moreover, NEM can be fabricated using a low-temperature process and, hence, may monolithically integrated on top of CMOS circuits. Hysteresis characteristics utilized designing switches FPGAs without requiring corresponding SRAM cells. Our simulation results demonstrate that the use simultaneously...

We present a technique to increase carbon nanotube (CNT) density beyond the as-grown CNT density. perform multiple transfers, whereby we transfer CNTs from several growth wafers onto same target surface, thereby linearly increasing on substrate. This process, called of nanotubes through sacrificial layers, is highly scalable, and demonstrate linear scaling up 5 transfers. also that this results in an ideal drain−source currents field effect transistors (CNFETs). Experimental can be improved...

While the literature is rich with data for electrical behavior of nanotransistors based on semiconductor nanowires and carbon nanotubes, few are available ultrascaled metal interconnects that will be demanded by these devices. Atomic layer deposition (ALD), which uses a sequence self-limiting surface reactions to achieve high-quality nanolayers, provides an unique opportunity study limits thermal conduction in interconnects. This work measures interprets conductivities free-standing platinum...

Fiber optic sensors have applications in the measurement of a wide range physical properties such as temperature, pressure, and refractive index. These are immune to electromagnetic interference, made high temperature dielectric materials hence can be deployed harsh environments where conventional electronics would fail. Photonic crystal (PC) fiber tip highly sensitive changes index while remaining compact robust. In comparison Bragg gratings (FBG) or long period (LPFG), they attractive...

In this letter, we examine the role of Ti capping layer in HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -based resistive random access memory (RRAM) devices on performance. It is found that with a thicker layer, fresh device initial leakage current increases and as result, forming voltage decreases. addition, thin <;3 nm (on top 8-nm ), there no switching, while by inserting 10 nm, window enlarges to about two orders. Very good...

Recent advances in the field of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have indicated that atomic layer deposition (ALD) oxide and subsequent sulfidation could offer a method for synthesis large area such as MoS2 with excellent control over entire substrate. However, growing films by ALD sub 1 nm nucleation coalescence remains significant challenge, necessary steps are unexplored. In this work, we demonstrate process improvements required to achieve...

This paper demonstrates electrical results of an integrated Si CMOS-electrostatically actuated nanoelectromechanical (NEM) relay circuit. is initial step towards realizing previously proposed NEM-CMOS hybrid circuits that predict various benefits compared to CMOS-only circuits. In this work, e-beam patterned laterally Pt NEM fabricated at CMOS-compatible temperatures (≤ 400 °C) on top CMOS and driven by on-chip inverter V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...

HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /AlO bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared single-layer devices, showed less variation of switching voltages and resistances. Inspired by fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes proposed: one linearly increases amplitudes; other...

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) silicon nitride (SiNx), particularly for use a low k dielectric spacer. One key material properties needed SiNx films is wet etch rate (WER) hydrofluoric (HF) acid. In this work, we report on evaluation multiple precursors plasma enhanced (PEALD) evaluate film’s WER 100:1 dilutions HF H2O. remote capability available PEALD, enabled controlling density film. Namely,...

We demonstrate a simple and rapid epoxy-based method for transferring photonic crystal cavities to the facets of optical fibers. Passive Si were measured via fiber taper coupling as well direct transmission from facet. Active quantum dot containing GaAs showed photoluminescence that was collected both in free space back through original fiber. Cavities maintain high quality factor (2000-4000) material systems. This new design architecture provides practical mechanically stable platform...

Laterally actuated polycrystalline silicon nanoelectromechanical (NEM) relays with enhanced electrical properties are presented. Due to surface oxidation of polysilicon in room ambient conditions, the have a high contact resistance (&amp;gt; 1 G&amp;#x03A9;) that requires drain bias (3-5 V) break through. The addition platinum sidewall coating reduces on-resistance and required as low 3 k&amp;#x03A9; 0.1 V, respectively. coating's stability is demonstrated by two tests: first,...

This paper presents techniques for designing nanoelectromechanical relay-based logic circuits using six-terminal relays that behave as universal gates. With proper biasing, a compact 2-to-1 multiplexer can be implemented single relay. Arbitrary combinational functions then well-known binary decision diagram (BDD) techniques. Compared to CMOS-style implementation four-terminal relays, the BDD-based result in lower area without major impact on performance metrics such delay, and energy (when...

Plasma-enhanced atomic layer deposition (PEALD) provides multiple benefits compared to thermal ALD including lower possible process temperature and a wider palette of materials. However, coverage high aspect ratio (AR) structures is limited due the recombination rates radical plasma species. We study limits conformality in 1:30 AR for TiO2 based on tetrakis(dimethylamido)titanium (TDMA-Ti) O2 through variation exposure substrate temperature. Extending duration decreasing within window both...

We present a sensor capable of detecting solution-based nanoparticles using an optical fiber tip functionalized with photonic crystal cavity. When tips are retracted from nanoparticle solution after being submerged, we find that combination convective fluid forces and optically-induced trapping cause aggregation to form directly on cavity surfaces. A simple readout quantum dot photoluminescence coupled the shows presence concentration can be detected through modified properties. Our detect...

Nano-Electro-Mechanical (NEM) relays are excellent candidates for programmable routing in Field Programmable Gate Arrays (FPGAs). FPGAs that combine CMOS circuits with NEM referred to as CMOS-NEM FPGAs. In this paper, we experimentally demonstrate, the first time, correct functional operation of switches FPGAs, and their programmability by utilizing hysteresis properties relays. addition, present a technique utilizes electrical selectively removes or downsizes buffers designing...

We demonstrate a temperature sensor consisting of 2-D, Silicon (Si), Photonic Crystal (PC) attached to the facet standard single-mode optical fiber. The 2-D PC sensors are fabricated on Si wafers, using single mask and combination isotropic anisotropic etching, microassembled onto facets fibers by Si-welding. Si-PC is monitored measuring its reflectance spectrum in 1250 1650 nm wavelength range. measured reflectivity peak shift 0.11 <formula formulatype="inline"...

The ability to deposit thin and conformal films has become of great importance because downscaling devices. However, nucleation difficulty, depositing an electrically stable platinum film on oxide layer proven challenging. By using plasma-enhanced atomic deposition (PEALD) TiO2 as a layer, we achieved continuous PEALD down thickness 3.7 nm. Results show that for 5.7 nm, the Mayadas-Shatzkes (MS) model electrical conductivity Tellier-Tosser temperature coefficient resistance hold. Although...