In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800 °C annealed HfO2 film exhibit a large window ∼5.1 V under ±10 sweeping voltages and excellent retention properties with only small loss ∼2.6% after more than 104 s retention. outstanding characteristics are attributed to high density deep defect states in films. We investigated films by photoluminescence excitation measurements found that...

The effects of chemical and structural surface heterogeneity on the CH4 adsorption behaviour microporous carbons have been investigated using a hybrid theoretical approach, including use density functional theory (DFT), molecular dynamics (MD), grand canonical Monte Carlo (GCMC) simulations. Bader charge analysis is first performed to analyze atomic partial charges. densities in defective functionalized graphite slit pores are lower than that perfect pore according MD Finally, isotherms for...

Low-voltage amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with thin HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate dielectric grown by anodic oxidation (anodization) method are investigated. The morphological and electrical properties of the anodized film studied. It is shown that as-grown an equivalent thickness 3.8 nm has a low leakage current density 3.6 × 10 <sup...

Vinification of grapes (Vitis vinifera) exposed to forest fire smoke can yield unpalatable wine due the presence taint compounds from and release derived volatiles their respective glycosides during fermentation process or in-mouth consumption. To identify glycosyltransferases (GTs) involved in formation glycosidically bound smoke-derived we performed gene expression analysis candidate GTs different grapevine tissues. Second, substrates bushfire naturally occurring were screened with...

The electrical recovery behaviors of the amorphous InGaZnO thin-film transistors (a-IGZO TFTs) after positive gate-bias stress (PBS) are investigated. TFTs show an evident sub-threshold swing (SS) degradation PBS removal when channel layer is deposited at relatively high oxygen flow rates, although they exhibit a parallel shift in transfer characteristics during PBS. It inferred that SS results from interstitial defects created a-IGZO PBS, which octahedral configuration and usually more...

In this paper, an efficient approach to mask optimization for digital micromirror device lithography is proposed, leveraging enhanced particle swarm algorithm, which significantly elevates the resolution and precision of lithography. Initially, chaos mapping applied initial population enhance diversity, thereby improving efficiency algorithm. Subsequently, self-adaptive parameter adjustments simulated annealing are integrated effectively avoid premature convergence escape local optima....

As a typical high-energy-density material, the sensitivity of CL-20 severely limits its application in explosives and propellants. Adjusting structure at microscopic level can effectively solve such problems. In this study, microfluidic recrystallization technique was used to prepare ε-CL-20 with three different particle sizes, narrow size distributions (D50 = 2.77 μm, 17.22 μm 50.35 μm). The prepared samples had fewer surface defects compared raw material. decreased, density increased...

The effect of O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> flow rate during the sputtered deposition channel layer on negative gate-bias stress (NGBS)-induced threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) instability a-IGZO TFTs is investigated. It shown that results in a V shift TFTs, and amount decreases with increase rate. proposed originates from electron-detrapping oxygen vacancy-related donor-like...

This paper reports that the electrical, optical and structural properties of ITO film can be significantly modulated by an anodization treatment. An TFT technology based on approach is then proposed demonstrated, which results in ideal homo‐junction device structure with source/drain/pixel electrodes channel region made one single layer. A preliminary fabrication at room temperature shows resulting has on/off current ratio exceeding 1 × 10 8 , a saturation mobility 29.0 cm 2 V −1 s...

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of TFTs are formed by an anodic oxidation (anodization) technique. While Al2O3 grown with a conventional anodization Al:Nd electrode, channel layer using localized The anodized shows superior effect to that PECVD SiO2. room-temperature-processed a-IGZO TFT exhibits field-effect mobility 7.5...

Glycosylasparaginase is an N-terminal nucleophile hydrolase and activated by intramolecular autoproteolytic processing. This cis-autoproteolysis possesses unique kinetics characterized a reversible N-O acyl rearrangement step in the Arg-180 Asp-183, involved binding of substrate mature enzyme, are also free amino acids partially formed pocket on certain mutant precursors. site sequestered wild-type precursor. Binding precursors can either inhibit or accelerate their processing, depending...

The last step in the sequence of reactions that lead to protein splicing is intramolecular O‐N or S‐N acyl rearrangement ester thioester linkage, respectively, between two exteins and hydrolysis aminosuccinimide residue at C‐terminus intein. This paper presents data on rates rearrangements model depsipeptides as a function pH temperature. both oxygen depsipeptide increased strikingly with pH, being about 10 3 times more reactive 5.5, had relatively low dependence temperature, indicative...

Br − /Br 2 mediated electrochemical oxidation of primary amines to nitriles paired with HER.

Amorphous indium tin oxide (a-ITO) thin-film transistors (TFTs) were fabricated with the channel layer deposited by cosputtering of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and SnO ceramic targets. It is shown that cosputter-deposited ITO film for well keeps in amorphous structure even after being annealed at 300° if sputtering powers two targets are properly selected. The...

The effect of oxygen adsorption at the back channel a-IGZO thin-film transistors (TFTs) is investigated. It shown that for TFTs with layer sputter-deposited a high O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ar flow rate ratio (RO/Ar), threshold voltages in vacuum and ambient do not show any difference; devices fabricated low RO/Ar, are lower than those . In addition, more significant voltage shift under positive gate bias stress....

A back-channel-etched fabrication process for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors is proposed, in which an alumium-doped ZnO (AZO) transparent conductive film used to form both source/drain and pixel electrodes. It demonstrated that rinsed acetic acid solution has a high etching selectivity over 100:1 between AZO a-IGZO. In addition, bus interconnect lines are formed separate step this process, so the Cu could be adopted without bringing contamination issue.