A5048660978- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- ZnO doping and properties
- Solar Thermal and Photovoltaic Systems
- Metallurgical Processes and Thermodynamics
- solar cell performance optimization
- Induction Heating and Inverter Technology
Institut de Recerca en Energia de Catalunya
2015-2020
École Nationale Supérieure des Mines de Paris
2012
Nexcis (France)
2012
A fundamental analysis of the impact Ge on synthesis Cu<sub>2</sub>ZnSnSe<sub>4</sub>:Ge by a sequential process is presented, reporting consequences absorber morphology and solar cell devices performance.
A detailed study explaining the beneficial effects of low temperature postdeposition annealing combined with selective surface etchings for Cu2ZnSnSe4 (CZTSe) based solar cells is presented. After performing a oxidizing etching to remove ZnSe secondary phases typically formed during synthesis processes an additional 200 °C step necessary increase device performance from below 3% power conversion efficiency up 8.3% best case. This significant in can be explained by changes chemistry which...
UV-based resonant Raman spectroscopy is an effective technique for a non-destructive assessment of defects in kesterite materials.
Cu2SnZn(S,Se)4 (CZTSSe) solar cells based on earth abundant and nontoxic elements currently achieve efficiencies exceeding 12%. It has been reported that, to obtain high efficiency devices, a post thermal treatment of absorbers or devices at temperatures ranging between 150 400 °C (post low temperature treatment, PLTT) is advisable. Recent findings point toward beneficial passivation grain boundaries with SnOx Cu-depleted surface during the PLTT process, but no investigation regarding alkali...
Temperature induced Cu<sub>2</sub>SnS<sub>3</sub>phase transition from a defective cubic to monoclinic structure assessed by Raman spectroscopy and leading higher photovoltaic efficiency.
The thin film kesterite-type Cu2ZnSnSe4 (CZTSe) and Cu2ZnSn(SxSe1–x)4 (CZTSSe) chalcogenides are promising materials due to their composition based on earth abundant elements proven photovoltaic performance in solar cells. use of transparent back electrodes for applications, adds this family devices a plethora possible technological applications including generating electrical power also from the rear side, thus becoming bifacial devices. This work reports strategy improve electrode/absorber...
Abstract Cu 2 ZnSn(S 1−x Se x ) 4 solar cells are well suited for roll‐to‐roll mass production since they formed mainly by non‐toxic and earth‐abundant elements. Polyimide (PI) has proved to be a promising compatible substrate yielding very high efficiency devices Cu(In,Ga)Se . In this work, we demonstrate the feasibility of using PI as low‐weight flexible alternative soda‐lime glass ZnSnSe (CZTSe) cells. Two main concerns arise when working with PI. Firstly, its low thermal robustness...
The introduction of the alkaline-earth element Mg into Cu2ZnSn(S,Se)4 (CTZSSe) is explored in view potential photovoltaic applications. Cu2Zn1-xMgxSn(S,Se)4 absorber layers with variable content x=0…1 are deposited using solution approach dimethyl sulfoxide solvent followed by annealing selenium atmosphere. For heavy alloying x = 0.55…1 phase separation Cu2SnSe3, MgSe2, MgSe and SnSe2 occurs agreement literature predictions. A lower x=0.04 results kesterite as confirmed XRD Raman...
This work reports a detailed resonant Raman scattering analysis of ZnMgO solid solution nanometric layers that are being developed for high efficiency chalcogenide solar cells. includes with thicknesses below 100 nm and compositions corresponding to Zn/(Zn + Mg) content rations in the range between 0% 30%. The vibrational characterization grown different has allowed deepening knowledge sensitivity spectral features on characteristics layers, corroborating viability based techniques their...
In this paper results on Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 powders, prepared by ball-milling process using elemental Cu, Zn, Sn, Se S as the materials source different milling times are presented. addition, preliminary targets processed with pressing pressures submitted later to one post-thermal annealing also As an important result, it is found that kesterite compounds can be obtained technique under significantly lower time (2 h) than those reported in literature. The powders were investigated...
Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ZnSn(S xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> Sey ) xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CZTS) thin-film solar cells have been qualified as potential competitors of the more established CIGS ones. One important handicaps CZTS is open-circuit voltage deficit. The rear-contact/absorber interface known to be very sensitive formation secondary phases, which are...
Abstract Wide band gap Cu(In,Ga)Se 2 ‐ZnSe (CIGZSe) thin films have been synthesized using a sequential process, with the objective to demonstrate possibility tune and introduce double gradients playing content of Ga at back Zn front. In first approach, we start by varying 3‐valent cationic composition system, then modify reactive annealing conditions in order understand control elemental gradients. Structural, compositional, morphological properties corresponding absorbers were analysed...
Abstract CuZnInSe 3 (CZISe) is an interesting alternative for the acknowledged Cu(In,Ga)Se 2 absorber layer in thin film solar cells. While partial replacement of scarce and expensive indium gallium by zinc decreases manufacturing costs, solid solution between CuInSe ZnSe opens options band gap tuning grading. Its potential as photovoltaic devices has been demonstrated obtaining 7.4 7.6 % efficiency CZISSe‐ CZISe‐based devices, respectively. On other hand, inherent complexity quaternary...
Raman spectroscopy has demonstrated to be a powerful tool for Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ZnSnSe xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> (CZTSe) characterization, allowing the assessment of relevant parameters such as crystal quality, secondary phases and defect presence. In this work detailed analysis CZTSe vibrational properties using non-bandgap resonance effects is performed. UV-based presented...