A5027579142- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Microwave Engineering and Waveguides
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Full-Duplex Wireless Communications
- Optimal Power Flow Distribution
- Metallic Glasses and Amorphous Alloys
- Photonic and Optical Devices
- Power System Optimization and Stability
- Electromagnetic Compatibility and Noise Suppression
- Millimeter-Wave Propagation and Modeling
- 3D IC and TSV technologies
- Magnetic properties of thin films
- Analog and Mixed-Signal Circuit Design
- Magneto-Optical Properties and Applications
- GaN-based semiconductor devices and materials
- Mast cells and histamine
- HVDC Systems and Fault Protection
- Regulation of Appetite and Obesity
- Advancements in PLL and VCO Technologies
- Semiconductor Lasers and Optical Devices
Vrije Universiteit Brussel
2019-2023
IMEC
2019-2023
China Resources (China)
2019
Jilin University
2008
This article presents a series voltage-combining Doherty power amplifier (PA) achieving high output ( P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> ) and power-back-off (PBO) efficiency for 28-GHz fifth-generation (5G) applications. We introduce new transformer-based combiner design method to achieve true-Doherty load modulation that uses compact footprint. The stages of the main PA auxiliary (aux. PA) both use differential...
This article presents novel methodologies and practical design considerations for a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D$ </tex-math></inline-formula> -band transmit/receive (T/R) front-end module (FEM) in 22-nm fully depleted silicon-on-insulator (FD-SOI/FDX) CMOS technology beyond-5G wireless communication. An ABCD-matrix-based synthesis methodology is proposed to co-design the T/R switch...
This paper presents design considerations and methodology for D-band transformer-based Class-AB gain-boosting power amplifiers (PAs) in three advanced silicon technologies: 28 nm bulk CMOS (complementary metal oxide semiconductor), 22 FD-SOI (fully-depleted on insulator), 130 SiGe BiCMOS (Silicon-germanium bipolar-CMOS). Firstly, the choice of processes models together with de-embedding approaches are discussed described. Then, a general flow matching network (TMN) is introduced to...
This paper presents a Doherty power amplifier (PA) in 22nm FD-SOI for achieving high output and backoff efficiency 28GHz 5G communications. The stage of the main PA auxiliary both use stacked-FET topology without posing reliability issue. A dedicated transformer-based matching network is proposed to achieve true load modulation while maintaining compact layout. fabricated technology with core area 0.2mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
This article presents practical design considerations and methodologies for a 28-GHz front-end module (FEM) in 22-nm fully depleted silicon on insulator (FD-SOI) CMOS technology the fifth generation (5G) wireless communication. The adopts gain-boosting technique that is comprehensively analyzed with transformer-based stacked-FET power amplifier (PA). Then, co-design of transmit/receive (T/R) switch PA low-noise (LNA) investigated, an electrostatic-discharge (ESD)-aware T/R incorporating...
This paper presents a D-band front-end module (FEM) with an integrated transmit/receive (T/R) switch in 22-nm fully-depleted silicon on insulator (FD-SOI) CMOS technology for beyond-5G communication. The asymmetric T/R topology intrinsic ESD protection leverages the Tx- and Rx-mode RF performance. Both PA LNA have differential transformer-based matching networks to eliminate unwanted effects from common-mode parasitics, especially at antenna port. adopted stacked-FET achieves high output...
We have designed a novel giant magnetoimpedance (GMI) noncontact current sensor with array structure double probes. Unlike previously reported sensors, our sensor's probes consist of many pieces commercial amorphous ribbons, which are parallel to each other, equidistant, and connected in series, permanent magnet provides bias magnetic field. The double-probe output shows the best sensitivity linearity at field 7.40 Oe. Under this field, 1 V/A range plusmn3 A, measurement precision less than...
A two-way power-combining amplifier operating from 112-142GHz is presented. Integrated in Infineon’s 0.13μm SiGe-BiCMOS technology, it delivers 17dBm of peak saturated power to a 50Ω load at 13% PAE. Five fully-differential, transformer-coupled stages per path provide 34dB forward transmission gain. Each 5-stage PA consists capacitively gain-enhanced pre-drivers operated 1.5V, followed by an inductively cascoded driver powered 3.3V. BJT models relevant frequencies beyond 100GHz are evaluated...
A 28 GHz front-end module (FEM) for 5G communication is implemented in 22 nm FD-SOI technology. Competitive performance both TX and RX modes achieved simultaneously with robustness mode ESD protection. The key these features the transmit/receive (T/R) switch incorporating PA circuitry, offering high linearity mode, low NF ESD-protection capability. output stage uses a 3-stacked-FET topology to achieve power. Several matching techniques are equally distribute large voltage swing among three...
The existing continuation power flow (CPF) methods, which mainly focus on regional independent systems, are not suitable for multi-area interconnected bulk systems in the electricity market environment. These CPF models cannot simulate control behaviors of active/reactive exchange among subsystems, and corresponding algorithms satisfy requirements data sharing. This study presents a novel model its distributed algorithm influence is considered. method has following unique features: 1)...
We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</sub> ) and maintain high power-added efficiency (PAE), differential 3-stacked transistors structure is used unit PA cell. The stability factor PAE are improved with capacitive neutralization shunt inductor intermediate node matching. Reliability issues under 2.4V...
This paper presents a 39 GHz front-end module (FEM) in 22 nm FD-SOI technology for 5G communications. The PA output stage uses 2-stacked FET topology to achieve high power. A two-way current combiner is used combine power from the while maintaining uniform waveform distribution over each transistor unit cell enhance device reliability. LNA consists of two stages obtain gain with low consumption. Derivative-superposition (DS) common-mode inductor improve linearity. measured P<inf>sat</inf>...
Improving the energy efficiency of wireless communication transmitters is an increasingly important target now that millimeter-wave (mm-wave) frequencies are being used. To improve compared with classical transmit architectures use a class A/AB power amplifier (PA), we propose here polar transmitter operates around 60 GHz. This based on radio frequency digital-to-analog converter (RF-DAC). RF-DAC uses switching scheme greatly reduces signal leakage via disabled unit cells which improves...
High-speed wireless communication in the post-5G era will likely make use of frequency bands above 100 GHz. This poses challenges to IC design silicon technologies. paper presents a general comparison D-band transformer-based Class-AB power amplifier with cross-coupled capacitive neutralization three advanced technologies: bulk CMOS, fully-depleted SOI, and SiGe BiCMOS. Each these technologies has its own prospects disadvantages. A performance parameters is made such as maximum available...
Design of mm-wave circuits operating above 100 GHz is challenging due to loading effects between different components, device, and layout parasitics. In this work, we propose a systematic approach using ABCD-parameters for multistage differential designs. This provides with high accuracy the scattering parameters every possible realization chosen matching network within broad search space. Hereby it considers constraints.