The γ-phase of copper(I) iodide (γ-CuI) is a p-type semiconductor with wide bandgap (Eg ≈ 3.1 eV). Conventionally, γ-CuI thin films have been synthesized by the iodination Cu layers iodine vapor. However, fabricated this method rough surface and thus frosted-glass-like appearance, which make it difficult to apply material transparent electronics. In paper, simple new proposed for synthesis truly films. chemical reaction between Cu3N solid-phase at 25 °C was found yield highly polycrystalline...

Abstract The development and properties of titanium dioxide (TiO 2 )‐based transparent conducting oxides (TCO), which exhibit comparable to those In 2– x Sn O 3 (ITO), are reviewed in this article. An epitaxial thin film anatase Ti 0.94 Nb 0.06 exhibited a resistivity ( ρ ) 2.3 × 10 −4 Ω cm internal transmittance ∼95% the visible light region. Furthermore, we prepared polycrystalline films with 6.4 at room temperature on glass substrates by using sputtering. We focus characteristics unique...

Nb-doped anatase TiO2 [Ti0.94Nb0.06O2 (TNO)] films with high electrical conductivity and transparency were fabricated on nonalkali glass using pulsed laser deposition subsequent annealing in a H2 atmosphere. The amorphous as deposited unheated substrates found to crystallize, forming polycrystalline at around 350°C. annealed 500°C showed resistivity down 4.6×10−4Ωcm room temperature optical transmittance of 60%–80% the visible region, which are comparable those epitaxial films. These results...

We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means first-principles calculations and photoemission measurements. The revealed that Nb 4d orbitals are strongly hybridized with Ti 3d ones to form d-nature conduction band, without impurity states in the in-gap region, resulting high carrier density exceeding 1021 cm-3 excellent optical transparency visible region. Furthermore, we confirmed results valence core-level...

We report a novel nonvolatile dual-layered electrolytic resistance memory composed of conductive Cu ion activated layer and thin insulator for the first time. An ON/OFF mechanism this new type is postulated as follows: ions pierce through by applied electric field, form bridge in layer, dissolves back to when field reversed. The 4 kbit array with 1T-1R cell structure was fabricated based on 180 nm CMOS process. Set/reset pulses were 5 ns, 110 muA 1 125 muA, respectively. Those conditions...

The transport properties of a d-electron-based transparent conducting oxide, Nb-doped anatase Ti1−xNbxO2, were investigated as function the Nb content x. From optical resistivity spectra, static effective mass was evaluated to be ∼0.4m0 in low-carrier-concentration (ne) regime, which is approximately same those conventional oxides (TCOs), and two orders magnitude smaller than that reported for rutile TiO2. Hall mobility at room temperature, maximized around x=0.01 (ne∼1021cm−3), found mainly...

Abstract Transparent p‐type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable transparent oxide semiconductors. Mildly heat‐treated have mobilities of ≈20 cm 2 V −1 s , are comparable to those GaN epilayers. Highly p–n diodes sufficient rectification ratio (10 6 ) manufactured by employing heterojunction and amorphous n‐type In‐Ga‐Zn‐O sheets. Thus, regarded as an excellent semiconductor for electronics.

The synthesis of crystals a zinc‐ and tin‐based earth‐abundant element nitride (ZnSnN 2 ) semiconductor was successfully achieved via metathesis reaction under high pressure. Pressures exceeding 5.5 GPa were required to obtain single‐phase crystals. material's bandgap determined be 1.4 eV, which is ideal for photovoltaic absorbers visible light‐active photocatalysts. decomposition temperature the material estimated approximately 350‒400 °C at atmospheric Finally, chemical stability against...

Nb-doped anatase TiO2 (TNO) polycrystalline films with excellent conductivity and transparency were successfully fabricated by reactive sputtering combined post annealing in H2 gas. The of as-deposited amorphous caused an abrupt decrease resistivity (ρ), which was accompanied crystallization into the structure. A film deposited on unheated glass substrate subsequent at 600 °C exhibited a 9.5×10-4 Ω cm average optical transmittance ∼75% visible region. This ρ value is same order as that...

We present a low-temperature (∼300 °C) process for preparing transparent conducting anatase Nb-doped TiO2 (TNO) polycrystalline films by sputtering. first deposited amorphous composed of an oxygen-rich bottom layer and oxygen-deficient top at room temperature. These were then crystallized in reducing atmosphere. The behaved as seed during crystallization the layer, resulting significant improvement crystallinity reduction obtained TNO showing resistivity 6.4×10-4 Ω cm absorption below 10%...

This paper proposes a novel sputter-based method for the direct growth of transparent conducting Ti1−xNbxO2 (TNO) polycrystalline films on glass, without need any postdeposition treatments, by use an initial seed-layer. Anatase TNO epitaxial grown LaAlO3 (100) substrates under reducing atmosphere exhibited low resistivity (ρ) (3–6)×10−4Ωcm. On however, highly resistive rutile phase (ρ∼100Ωcm) formed preferentially same conditions. These results suggest that stabilization oxygen-deficient...

Transparent p‐type polycrystalline CuI films with high hole mobility are produced by solid iodination of Cu 3 N precursor layers and subsequent heat treatment at 120 °C. The reached 20 cm 2 V −1 s in the fabricated on both glass polyethylene terephthalate substrates. Furthermore, transparent p–n diodes sufficiently rectification ratio (6 × 10 6 ) ideality factor (1.6) successfully employing a heterojunction n‐type amorphous In–Ga–Zn–O (a‐IGZO) layers. CuI/a‐IGZO exhibits photovoltaic effect,...

Electron mass anisotropy in the Nb-doped anatase ${\text{TiO}}_{2}$ (TNO) was determined by polarized infrared spectroscopy measurements for (012)-oriented TNO epitaxial films. The electron along $c$ axis, ${m}_{⟨001⟩}^{\ensuremath{\ast}}$, derived Drude analyses, found to be $0.5--3.3\text{ }{m}_{0}$, which 3--6 times larger than that $a$ ${m}_{⟨100⟩}^{\ensuremath{\ast}}$, $0.2--0.6\text{ }{m}_{0}$. This large attributed not only anisotropic crystal structure but also $d$-orbital-dominated...

While many types of transparent conducting oxides (TCOs) have been developed, nitride-based conductors remain rare. We examined the properties zinc nitride doped with oxygen (Zn3N2–xOx) as a potential conductor. Electron density on order 1020 cm–3 was achieved by heavy doping. A minimal resistivity (ρ) 6.2 × 10–4 Ω cm, comparable to those TCOs, observed for x = 0.19. Notably, Zn3N1.81O0.19 films had high electron mobility 85 cm2 V–1 s–1, 2–3 times larger than values TCOs. Detailed analyses...

Novel ternary nitride semiconductor MgSnN 2 was synthesized using the metathesis reaction under high pressure ( P = 5.5 GPa/ T 850 °C/1 h). obtained in this study showed a rocksalt structure, although we have reported that ZnSnN similar method has wurtzite structure. The (111) plane of with structure is expected to match well GaN (0001). band gap estimated be 2.3 eV and it shows distinct cathodoluminescence peak at room temperature. can find potential use photovoltaic absorber, emitting...

High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead the preferred growth (200)-oriented TTO films, resulting in 30% increase carrier density and more than two times mobility, compared directly substrates. highest mobility obtained 83 cm2 V-1 s-1 with resistivity 2.8×10-4 Ω cm, whereas film lowest 1.8×10-4 cm had 60 s-1.

Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed substrate of 500 °C in vacuum to form single-phase anatase films. Films with thickness 170 nm exhibited resistivity 8×10−4 Ω cm absorptance less than 5% wavelength 460 nm. Furthermore, the refractive index was well matched that GaN. These findings indicate is promising material for use as electrodes GaN-based light...