An Chen

ORCID: 0000-0003-0470-688X
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About
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Research Areas
  • Machine Learning in Materials Science
  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Advancements in Battery Materials
  • MXene and MAX Phase Materials
  • Perovskite Materials and Applications
  • Advanced Battery Materials and Technologies
  • Electronic and Structural Properties of Oxides
  • Ferroelectric and Negative Capacitance Devices
  • Geomechanics and Mining Engineering
  • Protein Structure and Dynamics
  • Radiomics and Machine Learning in Medical Imaging
  • Magnetic Properties and Applications
  • Fuel Cells and Related Materials
  • Advanced Optical Sensing Technologies
  • Geoscience and Mining Technology
  • Semiconductor materials and devices
  • Magnetic Field Sensors Techniques
  • Teleoperation and Haptic Systems
  • Nanoplatforms for cancer theranostics
  • Educational Technology and Pedagogy
  • Ultrasound Imaging and Elastography
  • Semiconductor Lasers and Optical Devices
  • Structural Engineering and Vibration Analysis
  • Metal Extraction and Bioleaching

Shanghai Jiao Tong University
2010-2025

Beijing Jiaotong University
2021-2024

Southwest Petroleum University
2024

State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation
2024

China Southern Power Grid (China)
2024

Xi'an Polytechnic University
2024

Kunming University of Science and Technology
2024

Shanghai First People's Hospital
2018-2024

Xi'an Jiaotong University
2024

China Pharmaceutical University
2020-2023

A non-volatile resistive switching mechanism based on trap-related space-charge-limited-conduction (SCLC) is proposed. Excellent memory characteristics have been demonstrated using near-stoichiometric cuprous oxide (Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> O) metal-insulator-metal (MIM) structures: low-power operation, fast speed, superior temperature characteristics, and long retention. This MIM cell fully compatible with...

10.1109/iedm.2005.1609461 article EN 2006-04-06

Metal oxide based resistive switching memories (also known as RRAM for Resistive Random Access Memory) often show large variability, due to the stochastic nature of process. This paper discusses variability key parameters with focus on resistance variation. The dependence variation operation conditions is analyzed, using Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O-based an example. impact device sensing margin crossbar arrays...

10.1109/irps.2011.5784590 article EN International Reliability Physics Symposium 2011-04-01

Lymph-vascular space invasion (LVSI) is an unfavorable prognostic factor in cervical cancer. Unfortunately, there are no current clinical tools for the preoperative prediction of LVSI.To develop and validate axial T1 contrast-enhanced (CE) MR-based radiomics nomogram that incorporated a signature some parameters predicting LVSI cancer preoperatively.Retrospective.In all, 105 patients were randomly divided into two cohorts at 2:1 ratio.T1 CE MRI sequences 1.5T.Univariate analysis was...

10.1002/jmri.26531 article EN cc-by-nc Journal of Magnetic Resonance Imaging 2018-10-26

Abstract Ultrahigh‐contrast photodetection with low background noise is of critical importance for accurate image‐sensing in deep‐sea and deep‐space exploration. The state‐of‐the‐art silicon III–V semiconductor‐based photodetectors usually require extended exposure to incident light high‐quality sensing darkness, which unfortunately results large room temperature dark currents ( RT ‐ I ) deteriorates the expected imaging contrasts. Herein, a high‐performance violet phosphorus (VP)...

10.1002/adom.202301399 article EN Advanced Optical Materials 2023-09-28

Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, polarization imaging fields. However, the reported in-plane anisotropic photocurrent polarized dichroic ratios are limited, hindering achievement of high-performance optoelectronics....

10.1021/acs.nanolett.3c02951 article EN Nano Letters 2023-12-05

The unsatisfactory ionic conductivity of solid polymer electrolytes hinders their practical use as substitutes for liquid to address safety concerns. Although various plasticizers have been introduced improve lithium-ion conduction kinetics, the lack microenvironment understanding impedes rational design high-performance electrolytes. Here, we a class Hofmann complexes that offer continuous two-dimensional channels with functional ligands, creating highly conductive Assisting unsupervised...

10.1038/s41467-024-55633-9 article EN cc-by-nc-nd Nature Communications 2025-01-27

Organic memories, with small dimension, fast speed and long retention features, are considered as promising candidates for massive data archiving. In order to satisfy the requirements ultra-low power high-security information storage, we design a conceptual molecular hard-disk (HDD) logic scheme that is capable execute in-situ encryption of in pW/bit power-consumption range. Beneficial from coupled mechanism counter-balanced redox reaction local ion drifting, basic HDD unit consisting ~200...

10.1038/s41467-025-57410-8 article EN cc-by-nc-nd Nature Communications 2025-02-27

RRAM-based physical unclonable function (PUF) leveraging the remarkable resistance variability has been proposed and experimentally demonstrated on a 1-kb one-transistor one-resistor array. In this letter, novel differential read-out method is utilized to reduce effect of window degradation. The RRAM PUF reliability optimized through reliability-enhancement design oxide stack engineering. experimental results show that demonstrates nearly ideal uniqueness with inter-chip Hamming distance...

10.1109/led.2016.2647230 article EN IEEE Electron Device Letters 2017-01-02

ZIF-8 MOFs, with their large specific surface area and void volume, unique biodegradability pH sensitivity, significant loading capacity, have been widely used as carrier materials for bioactive molecules such drugs, vaccines genes.

10.1039/d1ra02873a article EN cc-by-nc RSC Advances 2021-01-01

As an alternative energy storage system, the stable cycle and high-rate performance of aluminum–sulfur (Al–S) batteries are increasingly affected by dissolution intermediate Al polysulfide (Al2Sn) into electrolyte. Introducing anchoring materials that can promote Al2Sn conversion is effective way to solve this problem. However, lack interaction mechanism between hinders design materials. Here, we used single-atom-loaded MXene (SA@MXene) as a representative material systematically investigate...

10.1021/acsmaterialslett.2c00306 article EN ACS Materials Letters 2022-07-05

Accurate detection of toxic gases at low concentrations is often difficult because they are colorless, odorless, flammable and denser than air. Therefore, it urgent to develop highly stable sensitive gas detectors. However, most sensors operate high temperatures, making the more challenging. Two-dimensional materials with specific surface area abundant modulation methods properties provide new inspirations for development sensing materials. Here, bismuthene, a single element two-dimensional...

10.1039/d3cp00103b article EN Physical Chemistry Chemical Physics 2023-01-01

The contact resistance of the metal–semiconductor interface at source and drain increases as injection carriers decreases, degrading device performance. Reducing Schottky barrier height (SBH) is an effective way reducing resistance. Therefore, exploring Ohmic (no barrier) or low two-dimensional (2D) semiconductor/metal heterojunctions critical for developing high-performance electronic devices. We generate a comprehensive dataset from periodic table consisting 1092 potential 2D with good...

10.1021/acs.chemmater.2c00641 article EN Chemistry of Materials 2022-06-14

Fin field-effect transistors (FinFETs) have been widely used in electronic devices on account of their excellent performance, but this new type device is facing many challenges because size constraints. Two-dimensional (2D) materials with a layer structure can meet the required thickness FinFETs and provide ideal carrier transport performance. In work, we 2D tellurene as parent material modified it doping techniques to improve High-performance FinFET were prepared 23 systems screened from...

10.1016/j.patter.2023.100722 article EN cc-by-nc-nd Patterns 2023-04-01

The practical development of Li | |S batteries is hindered by the slow kinetics polysulfides conversion reactions during cycling. To circumvent this limitation, researchers suggested use transition metal-based electrocatalytic materials in sulfur-based positive electrode. However, atomic-level interactions among multiple sites are not fully understood. Here, to improve understanding sites, we propose a multi-view machine-learned framework evaluate electrocatalyst features using limited...

10.1038/s41467-024-52550-9 article EN cc-by-nc-nd Nature Communications 2024-09-29

The exceptional properties of two-dimensional hybrid organic–inorganic lead-halide perovskites (2D HOIPs) have led to a rapid increase in the number low-dimensional materials for optoelectronic engineering and solar energy conversion. flexibility controllability 2D HOIPs create vast structural space, which presents an urgent issue effectively explore with better performance practical applications. However, traditional RP-DJ classification method falls short describing influence structure on...

10.1021/acsnano.3c01442 article EN ACS Nano 2023-07-05

A Metal-Insulator-Metal (MIM) device based on a Cu2O insulator has electrical characteristics significantly dependent the oxide to top electrode (TE) interface. Cu/Cu2O/TE devices with various electrodes have different thermal release characteristics, related trap depth. The behavior of during erase Ni and Ti suggests mechanisms. This paper focuses Cu/Cu2O/Ni proposes model, power calculations temperature dependence.

10.1109/iedm.2006.346731 article EN International Electron Devices Meeting 2006-01-01
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