A5102932141- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Electronic and Structural Properties of Oxides
- Surface and Thin Film Phenomena
- 2D Materials and Applications
- Magnetic and transport properties of perovskites and related materials
- Advancements in Semiconductor Devices and Circuit Design
- Topological Materials and Phenomena
- Graphene research and applications
- Electromagnetic Compatibility and Noise Suppression
- Physics of Superconductivity and Magnetism
- Ga2O3 and related materials
- Quantum Information and Cryptography
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Metal and Thin Film Mechanics
- Photonic and Optical Devices
- Quantum Computing Algorithms and Architecture
- Chalcogenide Semiconductor Thin Films
- Ferroelectric and Piezoelectric Materials
- Microwave Engineering and Waveguides
- Multiferroics and related materials
- Advanced Condensed Matter Physics
- Electrostatic Discharge in Electronics
- Magnetic confinement fusion research
Peking University
2025
Suzhou Institute of Nano-tech and Nano-bionics
2018-2024
Chinese Academy of Sciences
2005-2024
University of Science and Technology of China
2024
University of St Andrews
2017-2021
Tulane University
2016-2019
Huazhong University of Science and Technology
2019
Southwest Jiaotong University
2016
Michigan State University
2015-2016
National Laboratory for Superconductivity
2011-2012
How the interacting electronic states and phases of layered transition-metal dichalcogenides evolve when thinned to single-layer limit is a key open question in study two-dimensional materials. Here, we use angle-resolved photoemission investigate structure monolayer VSe2 grown on bilayer graphene/SiC. While global similar that bulk VSe2, show that, for monolayer, pronounced energy gaps develop over entire Fermi surface with decreasing temperature below Tc = 140 ± 5 K, concomitant emergence...
The surface structure of the SrTiO${}_{3}$(110) polar is studied by scanning tunneling microscopy and x-ray photoelectron spectroscopy. Monophased reconstructions in (5 $\ifmmode\times\else\texttimes\fi{}$ 1), (4 (2 8), (6 8) are obtained, respectively, evolution between these phases can be tuned reversibly adjusting Ar${}^{+}$ sputtering dose or amount Sr/Ti evaporation. Upon annealing, reaches thermodynamic equilibrium that determined metal concentration. different electronic structures...
We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with distorted 1T crystal structure. find large number narrow valence bands, which we attribute combined influence structural distortion and spin-orbit coupling. further image how this leads strong in-plane anisotropy electronic structure, quasi-one-dimensional bands reflecting predominant hopping along zig-zag Re chains. that does not persist...
We show that the (3 × 1) stripe structure observed in TaTe2 at room temperature arises from formation of Ta4+–Ta4+ dimer chains along with a separate chain Ta3+. More importantly, we reveal an intriguing lattice distortion and charge modulation low temperature, which suggests interplay competition between triple-axis 3) density wave-like single-axis configuration. This work highlights importance as alternative platform rich structural electrical phases to explore charge-lattice coupling.
Purcell filters, which serve to suppress electromagnetic radiation and enhance the readout efficiency of qubit, are an indispensable component in superconducting quantum chips. With increasing scale chips, requirements for performance scalability filters becoming more stringent. In this report, a novel four-stage filter that enables fast measurement without exacerbating environmental damping qubits is presented. The design approach derived from serial parallel configurations λ/4 resonant...
Using scanning tunneling microscopy and density functional theory, we show that the molecular ordering orientation of metal phthalocyanine molecules on deactivated Si surface display a strong dependency central transition-metal ion, driven by degree orbital hybridization at heterointerface via selective p-d coupling. This Letter identifies mechanism for modifying molecule-substrate interaction which impacts growth behavior transition-metal-incorporated organic technologically relevant...
Growth mechanism and temperature of monoclinic gallium oxide (β‐Ga 2 O 3 ) films grown by ozone molecular beam epitaxy (MBE) are investigated herein. Phase‐pure () β‐Ga can be on c ‐plane sapphire substrates when the growth exceeds 500 °C, grain size increases with increase in temperature. Sixfold rotational domains obtained based epitaxial relationships (Ga < 010>//Al <> Ga 102>//Al 110>). For film at 700 threefold facets observed for first time, which resulted from...
Abstract We present a systematic study of surface band bending in Ga-polar n-GaN with different Si doping concentrations by angular dependent X-ray photoelectron spectroscopy (ADXPS). The binding energies Ga 3d and N 1 s core levels films increase increasing the emission angle, i. e., probing depth, suggesting an upward bending. By fitting level spectra at angles considering integrated effect electrostatic potential, energy topmost layer is well corrected, therefore, precisely evaluated. For...
Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits strongly enhanced CDW with higher temperature compared to bulk addition an insulating phase anisotropic gap Fermi level, causing suppression anticipated 2D ferromagnetism material. Here, we investigate interplay...
Intrigued by the discovery of long lifetime in α-Ta/Al2O3-based Transmon qubit, researchers recently found α-Ta film is a promising platform for fabricating multi-qubits with coherence time. To meet requirements integrating superconducting quantum circuits, ideal method to grow on silicon substrate compatible industrial manufacturing. Here we report sputter-grown Si (100) low-loss TiNx buffer layer. The large growth temperature window has good crystalline character. critical transition (Tc)...
We investigate the electronic structure of a two-dimensional electron gas created at surface multi-valley semimetal 1T-PtSe$_2$. Using angle-resolved photoemission and first-principles-based space charge calculations, we show how induced quantum well subband states form multiple Fermi surfaces which exhibit highly anisotropic Rashba-like spin splittings. further presence both electron- hole-like bulk carriers causes near-surface band bending potential to develop an unusual non-monotonic...
We study the evolution of surface reconstructions on SrTiO3 (110) determined by cation concentration ratio and find it detectable high energy electron diffraction (RHEED) even at temperature up to 800 °C. The evaporation rate Sr Ti sources can be calibrated precisely monitoring RHEED patterns in situ real time during extended homogeneous oxide molecule beam epitaxy growth film. High quality film is obtained with deviation stoichiometry less than 0.5%.
Superconducting quantum circuits (SQCs), composed of superconducting capacitors, inductances, Josephson junctions, and transmission lines, exhibit macroscopic effects at ultra-low temperatures. Due to the extremely low dissipation superconductors, an important application SQCs is qubits with long coherence time. Quantum computing based on a leading physical realization method computing, which theoretically capable accelerating many computational problems including simulation, database...
Polycrystalline α-tantalum (110) films deposited on the c-plane sapphire substrate by sputtering are used in superconducting qubits nowadays. However, these always occasionally form other structures, such as (111) grains and β-tantalum grains. To improve film quality, we investigate growth of a-plane under varying conditions molecular beam epitaxy technology. The optimized is a single crystal, with smooth surface atomically flat metal–substrate interface. thickness 30 nm shows Tc 4.12 K high...
As a member of ZrHM (H = Si/Ge/Sn; M O/S/Se/Te) family materials, which were predicted to be the candidates topological Dirac nodal-line semimetals, ZrGeSe exhibited particular properties, such as magnetic breakdown effect in transport measurement, different from its other isostructural compounds, informing an unique topology electronic band structure. However, related experimental research is insufficient until now. Here, we present systematic study structure and Fermi surfaces (FS) by...
The presence of amorphous oxide layers can significantly affect the coherent time superconducting qubits due to their high dielectric loss. Typically, surface oxides superconductor films exhibit lossy and unstable behavior when exposed air. To increase coherence time, it is essential for have stable low loss oxides, either as barrier or passivation layers. In this study, we highlight robust nature an tantalum layer formed on α-Ta (110) film by employing chemical structural analyses. Such...
By controlling the growth of complex oxide films with atomic precision, emergent phenomena and fascinating properties have been discovered, even manipulated. With molecular beam epitaxy (OMBE) we grow high-quality SrTiO3(110) by evaporating Sr Ti metals separate controls open/close timing shutters. The incident electron angle reflective high energy diffraction (RHEED) is adjusted to make (01) sensitive surface chemical concentration. monitoring such an intensity, tune shutter synchronize...
Freestanding silicene, a monolayer of Si arranged in honeycomb structure, has been predicted to give rise massless Dirac fermions, akin graphene. However, structures grown on supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we electrical ($\sqrt{3}\times\sqrt{3}$) phase few-layer Ag(111) depend film thickness, where electron coherence length decreases...
The formation process of Ag nanoparticles on SrTiO3(110) surface is studied by scanning tunneling microscope. quasi-long-range ordered adsorbates pre-existing (4×1)-reconstructed serve as nucleation centers and guide the growth a uniform array. Such regulatory effect further manifested comparing behavior with that relatively flat (5 × 1)-reconstructed rough amorphous surface. It also found (4 1) remarkably enhance thermal stability nanoparticles.
An improved version of a kinetic simulation technique, the convected scheme (CS), is described. We present ``long-lived moving cell'' and describe recipe for implementation in detail. In collisional systems, numerical diffusion ``ballistic motion'' does not affect result regular CS, which can be set up to minimize collision processes. With new scheme, highly reduced even nearly collisionless plasma important modeling low-pressure high-density sources.