Zhihan Zhu

ORCID: 0000-0003-3779-4265
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About
Contact & Profiles
Research Areas
  • Semiconductor materials and devices
  • Circular RNAs in diseases
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • MicroRNA in disease regulation
  • Extracellular vesicles in disease
  • Integrated Circuits and Semiconductor Failure Analysis
  • Nanoparticle-Based Drug Delivery
  • RNA Interference and Gene Delivery
  • Cancer-related molecular mechanisms research
  • Venous Thromboembolism Diagnosis and Management
  • RNA modifications and cancer
  • Genomics and Phylogenetic Studies
  • Intracranial Aneurysms: Treatment and Complications
  • Acute Ischemic Stroke Management
  • Electrostatic Discharge in Electronics
  • Cancer Genomics and Diagnostics
  • Advanced biosensing and bioanalysis techniques

Max Planck Institute for Molecular Genetics
2025

Southeast University
2020-2023

Zhongda Hospital Southeast University
2019

The aim of the present study was to investigate neuroprotective roles and mechanisms circular RNA circSHOC2 in ischemic-preconditioned astrocyte-derived exosomes (IPAS-EXOs) against ischemic stroke. We established an ischemia model based on oxygen glucose deprivation (OGD) vitro isolated resultant from astrocytes. Neuronal viability apoptosis were determined by Cell Counting Kit-8 (CCK-8) assays TUNEL (terminal deoxynucleotidyltransferase-mediated deoxyuridine triphosphate nick end labeling)...

10.1016/j.omtn.2020.09.027 article EN cc-by-nc-nd Molecular Therapy — Nucleic Acids 2020-09-26

Transplanted neural stem cells promote tissue regeneration and functional recovery primarily by releasing paracrine factors. Exosomes act as important secreted molecules to deliver therapeutic agents involved in cellular functions. Here, we focused on the role of exosomes (hNSC-Exo) derived from human (hNSCs). We utilized pro-inflammatory factor interferon gamma (IFN-γ) induce generation altered (IFN-γ-hNSC-Exo), compared their roles with those hNSC-Exo explored potential mechanism....

10.1016/j.jare.2020.05.017 article EN cc-by-nc-nd Journal of Advanced Research 2020-05-26

Abstract Our objective was to determine the molecular mechanisms by which lncRNA HOXA‐AS3 regulates biological behaviour of glioblastoma multiforme (GBM). We used an microarray assay identify GBM‐related expression profiles. Qrt‐PCR survey levels long non‐coding RNA (lncRNA) and target gene. Dual‐luciferase reporter assays were investigate interaction HOXA‐AS3, gene miRNA. Western blot analysis examine USP3 epithelial‐mesenchymal transition (EMT) genes. The MTT assay, transwell wound healing...

10.1111/jcmm.15788 article EN cc-by Journal of Cellular and Molecular Medicine 2020-09-11

Abstract Although the intraoperative molecular diagnosis of approximately 100 known brain tumor entities described to date has been a goal neuropathology for past decade, achieving this within clinically relevant timeframe under 1 h after biopsy collection remains elusive. Advances in third-generation sequencing have brought closer, but established machine learning techniques rely on computationally intensive methods, making them impractical live diagnostic workflows clinical applications....

10.1038/s41591-024-03435-3 article EN cc-by Nature Medicine 2025-02-28

To evaluate whether endovascular thrombectomy combined with intravenous thrombolysis is superior to the standard treatment of for ischemic stroke. A meta-analysis 12 studies obtained by searching PubMed and Web Science database was performed determine difference in mortality (within 7 days or 90 days), functional outcome (modified Rankin Scale, 0-2), hemorrhage (symptomatic intracerebral hemorrhage, subarachnoid hemorrhage), recurrent stroke rate at between patients who underwent mechanical...

10.26599/jnr.2021.9040014 article EN cc-by-nc Journal of Neurorestoratology 2021-09-01

In this work, a new 200V 0.18µm SOI-BCD platform has been developed comprehensively including the wide-SOA n&pLDMOS, low-Ron nLDMOS and LIGBT. It is noted that ultra-thin N-drift skillfully applied below shallow-trench-isolation (STI) structure for to realize an ultra-low specific on-state resistance (R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on, sp</inf> ) with 20% decrease than best reported study off-state breakdown voltage (BV...

10.1109/ispsd57135.2023.10147740 article EN 2023-05-28

In this work, an ultralow specific ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON},\text {sp}}$ </tex-math></inline-formula> ) silicon-on-insulator lateral double diffusion metal-oxide-semiconductor (SOI-LDMOS) applied in automotive circuits has been fabricated based on the notation="LaTeX">$0.18~\mu \text{m}$ process technology with 16.5...

10.1109/ted.2023.3338171 article EN IEEE Transactions on Electron Devices 2023-12-12

In our work, the reliabilities and inner mechanisms of high-voltage silicon-on-insulator lateral insulated gate bipolar transistors (SOI-LIGBTs) have been investigated comprehensively under repetitive electrostatic discharge (ESD) stresses for better application on circuits. The worst ESD stress occurs when SOI-LIGBT is getting snapback with turn- ON parasitic transistor. transmission line pulse (TLP) I, ON-state voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/ted.2023.3298751 article EN IEEE Transactions on Electron Devices 2023-08-07

This paper presents the vertical DMOS structure integrated into CMOS flow, which is demonstrated from TCAD and silicon proven. With source contact at bottom of trench, device prototype can achieve trench experimental physical best-in-class performance specific on-resistance (Ron,sp) about 12 mΩ•mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with breakdown voltage (BV) 50V. better around 20% than lateral for operating 30V level....

10.1109/icsict55466.2022.9963344 article EN 2022 IEEE 16th International Conference on Solid-State &amp; Integrated Circuit Technology (ICSICT) 2022-10-25
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